BT137B-800F
4Q Triac
20 June 2018
Product data sheet
1. General description
Planar passivated four quadrant triac in a TO263 (D2PAK) surface-mountable plastic package
intended for use in bidirectional switching and phase control applications.
2. Features and benefits
•
•
•
•
•
High blocking voltage capability
Less sensitive gate for improved noise immunity
Planar passivated for voltage ruggedness and reliability
Surface-mountable package
Triggering in all four quadrants
3. Applications
•
•
General purpose motor controls
General purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
mb
≤ 102 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
-
-
-
-
Typ
-
-
-
-
-
5
8
11
30
Max
800
8
65
71
125
25
25
25
70
Unit
V
A
A
A
°C
mA
mA
mA
mA
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
T
j
I
GT
junction temperature
gate trigger current
Static characteristics
WeEn Semiconductors
BT137B-800F
4Q Triac
Symbol
I
H
V
T
dV
D
/dt
Parameter
holding current
on-state voltage
rate of rise of off-state
voltage
rate of change of
commutating voltage
Conditions
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 10 A; T
j
= 25 °C;
Fig. 10
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
V
D
= 400 V; T
j
= 95 °C; dI
com
/dt = 3.6 A/
ms; I
T
= 8 A; gate open circuit
Min
-
-
50
Typ
5
1.3
250
Max
20
1.65
-
Unit
mA
V
V/µs
Dynamic characteristics
dV
com
/dt
-
20
-
V/µs
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
mb
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main
terminal 2
1
2
3
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
D2PAK (SOT404)
6. Ordering information
Table 3. Ordering information
Type number
BT137B-800F
Package
Name
D2PAK
Description
plastic single-ended surface-mounted package (D2PAK); 3
leads (one lead cropped)
Version
SOT404
BT137B-800F
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
20 June 2018
2 / 13
WeEn Semiconductors
BT137B-800F
4Q Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I t for fusing
rate of rise of on-state
current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
10
I
T(RMS)
(A)
8
003aae689
Conditions
Min
-
Max
800
8
65
71
21
50
2
5
0.5
150
125
003aae692
Unit
V
A
A
A
A²s
A/µs
A
W
W
°C
°C
full sine wave; T
mb
≤ 102 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
t
p
= 10 ms; SIN
I
G
= 150 mA
-
-
-
-
-
-
-
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
2
2
over any 20 ms period
-
-40
-
25
I
T(RMS)
(A)
20
6
15
4
10
2
5
0
- 50
0
50
100
T
mb
(°C)
150
0
10- 2
10- 1
1
10
surge duration (s)
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
f = 50 Hz
T
mb
≤ 102 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BT137B-800F
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
20 June 2018
3 / 13
WeEn Semiconductors
BT137B-800F
4Q Triac
12
P
tot
(W)
8
003aae690
conduction
angle,
α
(degrees)
30
60
90
120
180
form
factor
a
2.816
1.967
1.570
1.329
1.110
α = 180°
α
120°
90°
α
60°
30°
4
0
0
2
4
6
8
I
T(RMS)
(A)
10
α = conduction angle
a = form factor = I
T(RMS)
/I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
10
3
I
TSM
(A)
003aae691
I
T
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
2
(1)
(2)
10
10
- 5
10
- 4
10
- 3
10
- 2
t
p
(s)
10
- 1
t
p
≤ 20 ms
(1) dI
T
/dt limit
(2) T2- G+ quadrant limit
Fig. 4. Non-repetitive peak on-state current as a function of pulse width; maximum values
BT137B-800F
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
20 June 2018
4 / 13
WeEn Semiconductors
BT137B-800F
4Q Triac
80
I
TSM
(A)
60
003aae693
40
I
T
20
I
TSM
t
1/f
T
j(init)
= 25 °C max
0
1
10
10
2
10
3
number of cycles
10
4
f = 50 Hz
Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT137B-800F
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
20 June 2018
5 / 13
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