BT134-800
4Q Triac
Rev.01 - 27 April 2018
Product data sheet
1. General description
Planar passivated four quadrant triac in a SOT82 (SIP3) plastic package intended for use in
general purpose bidirectional switching and phase control applications.
2. Features and benefits
•
•
•
•
•
High blocking voltage capability
Planar passivated for voltage ruggedness and reliability
Less sensitive gate for improved noise immunity
Triggering in all four quadrants
Compact package
3. Applications
•
•
•
General purpose low power motor control
Home appliances
Industrial process control
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter
Absolute maximum rating
V
DRM
I
T(RMS)
I
TSM
Symbol
I
GT
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
Parameter
gate trigger current
full sine wave; T
mb
≤ 107 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
Min
-
-
-
-
800
4
25
Typ
5
8
11
30
Max
35
35
35
70
V
A
A
Unit
mA
mA
mA
mA
Conditions
Values
Unit
Static characteristics
WeEn Semiconductors
BT134-800
4Q Triac
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
1
2
3
mb
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main terminal 2
T2
sym051
Simplified outline
Graphic symbol
T1
G
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BT134-800
SIP3
Description
plastic single-ended package; 3-leads (in-line)
Version
SOT82
7. Marking
Table 4. Marking codes
Type number
BT134-800
Marking codes
BT134-800
BT134-800
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©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
27 April 2018
2 / 13
WeEn Semiconductors
BT134-800
4Q Triac
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I
2
t for fusing
rate of rise of on-state
current
full sine wave; T
mb
≤ 107 °C;
Fig 1; Fig 2; Fig 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig 4; Fig 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
I
2
t
dI
T
/dt
t
P
= 10 ms; SIN
I
G
= 70 mA; T2+ G+
I
G
= 70 mA; T2+ G-
I
G
= 70 mA; T2- G-
I
G
= 140 mA; T2- G+
I
GM
P
GM
P
G(AV)
T
stg
T
j
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
Conditions
Values
800
4
25
27
3.1
50
50
50
10
2
5
0.5
-40 to 150
125
Unit
V
A
A
A
A
2
s
A/μs
A/μs
A/μs
A/μs
A
W
W
°C
°C
BT134-800
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©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
27 April 2018
3 / 13
WeEn Semiconductors
BT134-800
4Q Triac
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
f = 50 Hz; T
mb
≤ 107 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
BT134-800
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©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
27 April 2018
4 / 13
WeEn Semiconductors
BT134-800
4Q Triac
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
t
p
≤ 20 ms
(1) dI
T
/dt limit
(2) T2- G+ quadrant limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
BT134-800
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
27 April 2018
5 / 13
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