BTA204X-600C
3Q Hi-Com Triac
19 September 2018
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full pack"
plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can
occur.This "series C" triac will commutate the full rated RMS current at the maximum rated junction
temperature without the aid of a snubber.
2. Features and benefits
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
High voltage capability
Isolated mounting base package
Less sensitive gate for high noise immunity
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
3. Applications
•
•
•
General purpose motor control circuits
Home appliances
Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
h
≤ 92 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
-
Typ
-
-
-
-
-
-
Max
600
4
25
27
125
35
Unit
V
A
A
A
°C
mA
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
T
j
I
GT
junction temperature
gate trigger current
Static characteristics
WeEn Semiconductors
BTA204X-600C
3Q Hi-Com Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Min
-
-
-
-
1000
Typ
-
-
-
1.4
-
Max
35
35
20
1.7
-
Unit
mA
mA
mA
V
V/µs
I
H
V
T
dV
D
/dt
holding current
on-state voltage
rate of rise of off-state
voltage
rate of change of
commutating current
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 5 A; T
j
= 25 °C;
Fig. 10
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 4 A;
dV
com
/dt = 20 V/µs; (snubberless
condition); gate open circuit
Dynamic characteristics
dI
com
/dt
3
-
-
A/ms
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
mb
Symbol Description
T1
T2
G
n.c.
main terminal 1
main terminal 2
gate
mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220F (SOT186A)
6. Ordering information
Table 3. Ordering information
Type number
BTA204X-600C
Package
Name
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
BTA204X-600C
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
19 September 2018
2 / 13
WeEn Semiconductors
BTA204X-600C
3Q Hi-Com Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I t for fusing
rate of rise of on-state
current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
16
I
T(RMS )
(A)
12
003a a g084
Conditions
Min
-
Max
600
4
25
27
3.1
100
2
5
0.5
150
125
003aad588
Unit
V
A
A
A
A²s
A/µs
A
W
W
°C
°C
full sine wave; T
h
≤ 92 °C;
Fig. 1; Fig. 2;
Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
t
p
= 10 ms; SIN
I
G
= 0.2 A
-
-
-
-
-
-
-
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
2
2
over any 20 ms period
-
-40
-
5
I
T(RMS)
(A)
4
92 °C
3
8
2
4
1
0
10
-2
10
-1
1
10
s urge duration (s)
0
-50
0
50
100
T
h
(°C)
150
f = 50 Hz; T
h
= 92 °C
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
Fig. 2. RMS on-state current as a function of heatsink
temperature; maximum values
BTA204X-600C
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
19 September 2018
3 / 13
WeEn Semiconductors
BTA204X-600C
3Q Hi-Com Triac
8
P
tot
(W)
6
003aag210
conduction
angle
(degrees)
30
60
90
120
180
form
factor
α
81
T
h(max)
86.5 (°C)
2.816
1.967
1.570
1.329
1.110
α = 180 °
α
92
97.5
103
108.5
114
119.5
120 °
90 °
60 °
30 °
4
2
0
0
1
2
3
4
I
T(RMS)
(A)
5
125
α = conduction angle; a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
30
I
TSM
(A)
003aag086
20
10
I
T
I
TSM
t
1/f
T
j(init)
= 25 °C max
0
1
10
10
2
number of cycles
10
3
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA204X-600C
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
19 September 2018
4 / 13
WeEn Semiconductors
BTA204X-600C
3Q Hi-Com Triac
10
3
I
TS M
(A)
003aag085
I
T
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
2
(1)
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms; (1) dI
T
/dt limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
BTA204X-600C
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
19 September 2018
5 / 13
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