FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK
October 2006
FGPF7N60RUFD
600V, 7A RUF IGBT CO-PAK
Features
• High speed switching
• Low saturation voltage : V
CE(sat)
= 1.95 V @ I
C
= 7A
• High input impedance
• CO-PAK, IGBT with FRD : t
rr
= 50 ns (typ.)
• Short Circuit rated, 10us @ T
C
=100°C, V
GE
=15V, V
CE
=300V
Applications
Motor controls and general purpose inverters.
Description
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides
low conduction and switching losses.The device is designed for
Motor applications where ruggedness is a required feature.
C
G
1
TO-220F
1.Gate 2.Collector 3.Emitter
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
T
J
T
stg
T
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
FGP7N60RUFD
600
±
20
14
7
21
12
60
41
16
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Thermal Characteristics
Symbol
R
θJC
(IGBT)
R
θJC
(DIODE)
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
3.0
4.2
62.5
Units
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGPF7N60RUFD Rev. A
FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK
Package Marking and Ordering Information
Device Marking
FGPF7N60RUFD
Device
FGPF7N60RUFDTU
Package
TO-220F
Packaging
Type
Rail / Tube
Qty per Tube
50ea
Max Qty
per Box
-
Electrical Characteristics of the IGBT
Symbol
Off Characteristics
BV
CES
∆B
VCES
/
∆T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
T
C
= 25°C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
GE
= 0V, I
C
= 250uA
V
GE
= 0V, I
C
= 3mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
600
--
--
--
--
0.6
--
--
--
--
250
± 100
V
V/°C
uA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 7mA, V
CE
= V
GE
I
C
= 7A
,
V
GE
= 15V
I
C
= 7A
,
V
GE
= 15V,
T
C
= 125°C
I
C
= 14 A
,
V
GE
= 15V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
510
55
15
--
--
--
pF
pF
pF
5.0
--
--
--
6.5
1.95
2.1
2.65
8.0
2.8
--
--
V
V
V
V
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Q
g
Q
ge
Q
gc
L
e
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
Measured 5mm from PKG
V
CE
= 300 V, I
C
= 7A,
V
GE
= 15V
V
CC
= 300 V, I
C
= 7 A,
R
G
=30Ω, V
GE
= 15V,
Inductive Load, T
C
= 125°C
V
CC
= 300 V, I
C
= 7A,
R
G
= 30Ω, V
GE
= 15V,
Inductive Load, T
C
= 25°C
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
60
60
60
170
0.23
0.10
0.33
65
70
55
350
0.25
0.27
0.52
24
4
10
7.5
--
--
80
280
--
--
0.5
--
--
--
--
--
--
--
36
6
15
--
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
nC
nC
nC
nH
2
FGPF7N60RUFD Rev. A
www.fairchildsemi.com
FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK
Electrical Characteristics of DIODE
T
Symbol
V
FM
C
= 25°C unless otherwise noted
Parameter
Diode Forward Voltage
Test Conditions
I
F
= 7A
T
C
= 25°C
T
C
= 100°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.65
1.58
50
58
2.5
3.3
62.5
95.7
Max.
2.1
--
65
--
3.75
--
122
--
Units
V
t
rr
Diode Reverse Recovery Time
I
F
= 7A
dI/dt = 200 A/µs
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
ns
I
rr
Diode Peak Reverse Recovery Current
A
Q
rr
Diode Reverse Recovery Charge
T
C
= 25°C
T
C
= 100°C
nC
3
FGPF7N60RUFD Rev. A
www.fairchildsemi.com
FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
40
Figure 2. Typical Saturation Voltage
Characteristics
40
C o m m o n E m itte r
V
GE
= 1 5 V
T
C
= 25 C
o
20V
15V
12V
Collector Current, I
C
[A]
Collector Current, I
C
[A]
30
30
T
c
= 25 C
o
T
c
= 125 C
o
20
10V
20
10
V
GE
= 8V
10
0
0
2
4
6
8
C ollector-Em itter Voltage, V
C E
[V]
0
0
2
4
6
8
C o lle c to r-E m itte r V o lta g e , V
C E
[V ]
Figure 3. Saturation Voltage vs Case
Temperature at Variant Current Level
4
Com m om Em itter
V
GE
= 15V
Figure 4. Load Current vs Frequency
15
V
cc
= 300V
load Current : peak of square wave
Collector - Emitter Voltage, V
CE
[V]
I
C
= 7 A
2
I
C
=3.5 A
Load Current [A]
3
I
C
= 14 A
10
5
1
0
25
50
75
100
o
125
150
0
0.1
Duty cycle : 50%
o
T
c
= 100 C
Power Dissipation = 14W
1
10
100
1000
Case Temperature, T
c
[ C]
Frequency [kHz]
Figure 5. Saturation Voltage vs. Vge
10
[V]
Common Emitter
o
T
C
= 25 C
Figure 6. Saturation Voltage vs. Vge
10
C o m m o n E m itte r
o
T c = 125 C
Collector - Emitter Voltage, V
CE
8
Collector - Emitter Voltage, V
[V]
CE
8
6
6
4
14A
7A
4
7A
14 A
2
I
C
=3.5A
2
Ic=3.5A
0
5
10
15
Gate - Emitter Voltage, V
GE
[V]
20
5
10
15
20
G ate - E m itter V oltage, V
G E
[V ]
4
FGPF7N60RUFD Rev. A
www.fairchildsemi.com
FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
Temperature at Variant Current Level
1000
Common Emitter
V
GE
= 0V, f = 1MHz
800
Ciss
T
C
= 25 C
o
(Continued)
Figure 8. Turn-On Characteristics vs. Gate
Resistance
Ton
Switching Time [ns]
Capacitance [pF]
100
Tr
600
400
Coss
Crss
200
C o m m o n E m itte r
V
C C
= 3 0 0 V , V
GE
= + /-1 5 V
I
C
= 7 A
Tc = 25 C
o
Tc = 125 C
10
o
0
1
10
10
G a te R e sista nce , R
G
[
Ω
]
100
Collector-Emitter Voltage, V
CE
[V]
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
Com m on Em itter
V
CC
= 300V, V
GE
= +/-15V
I
C
= 7A
Tc = 25 C
o
Tc = 125 C
Toff
o
Figure 10. Switching Loss vs. Gate Resistance
600
500
400
Switching Loss [uJ]
300
1000
C o m m o n E m itte r
V
C C
= 3 0 0 V , V
G E
= + /-1 5 V
I
C
= 7 A
Tc = 25 C
o
Tc = 125 C
o
Eon
E o ff
Eon
Switching Time [ns]
Tf
200
Toff
Tf
100
10
G a te R e s is ta nc e , R
G
[
Ω
]
E o ff
100
10
Gate Resistance, R
G
[
Ω
]
100
100
Figure 11. Turn-On Characteristics vs.
Collector Current
200
150
Common Emitter
V
GE
= +/-15V, R
G
=30
Ω
I
C
= 7A
Tc = 25 C
o
Tc = 125 C
o
Figure 12. Turn-Off Characteristics vs.
Collector Current
1000
800
600
Switching Time [ns]
Com m on Em itter
V
GE
= +/-15V, R
G
=30
Ω
I
C
= 7A
T c = 25 C
o
T c = 125 C
T off
o
Switching Time [ns]
100
Ton
400
Tf
50
Tr
T off
200
Tf
4
6
8
10
12
14
4
6
8
10
12
14
Collector Current, I
C
[A]
Collector C urrent, I
C
[A]
5
FGPF7N60RUFD Rev. A
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