FGA90N30D 300V PDP IGBT
September 2006
FGA90N30D
300V PDP IGBT
Features
• High Current Capability
• Low saturation voltage: V
CE(sat),
Typ = 1.1V@ I
C
= 20A
• High Input Impedance
Description
Employing Unified IGBT Technology, FGA90N30D provides low
conduction and switching loss. FGA90N30D offers the optimum
solution for PDP applications where low condution loss is
essential.
C
G
TO-3P
G C E
E
T
C
= 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM
I
F
I
FM
P
D
T
J
T
stg
T
L
Notes:
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
(Note 1)
FGA90N30D
300
±
30
@ T
C
= 25°C
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
90
220
10
40
219
87
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
W
W
°C
°C
°C
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
(1) Repetitive test , pulse width = 100usec , Duty = 0.5
* Ic_pulse limited by max Tj
Thermal Characteristics
Symbol
R
θJC
(IGBT)
R
θJC
(DIODE)
R
θJA
Parameter
Thermal Resistance, Junction-to-Case for IGBT
Thermal Resistance, Junction-to-Case for Diode
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
0.57
1.56
40
Units
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGA90N30D Rev. A
FGA90N30D 300V PDP IGBT
Package Marking and Ordering Information
Device Marking
FGA90N30D
Device
FGA90N30D
Package
TO-3P
Reel Size
--
Tape Width
--
Quantity
30
Electrical Characteristics of the IGBT
Symbol
Off Characteristics
BV
CES
ΔB
VCES
/
ΔT
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
T
C
= 25°C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 250μA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
300
--
--
--
--
0.6
--
--
--
--
100
± 250
V
V/°C
μA
nA
On Characteristics
V
GE(th)
G-E Threshold Voltage
I
C
= 250uA, V
CE
= V
GE
I
C
= 20A
,
V
GE
= 15V
V
CE(sat)
Collector to Emitter
Saturation Voltage
I
C
= 90A
,
V
GE
= 15V
I
C
= 90A
,
V
GE
= 15V,
T
C
= 125°C
2.5
--
--
--
4.0
1.1
1.9
2.0
5.0
1.4
--
--
V
V
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
1700
290
80
-
-
-
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Q
g
Q
ge
Q
gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 200V, I
C
= 20A,
V
GE
= 15V
V
CC
= 200V, I
C
= 20A,
R
G
= 10Ω, V
GE
= 15V,
Resistive Load, T
C
= 125°C
V
CC
= 200V, I
C
= 20A,
R
G
= 10Ω, V
GE
= 15V,
Resistive Load, T
C
= 25°C
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
30
200
110
140
0.15
0.45
0.6
30
210
110
200
0.16
0.72
0.88
87
12
38
--
--
--
300
--
--
--
--
--
--
--
--
--
--
130
18
57
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
nC
nC
nC
2
FGA90N30D Rev. A
www.fairchildsemi.com
FGA90N30D 300V PDP IGBT
Electrical Characteristics of DIODE
T
C
= 25°C unless otherwise noted
Symbol
V
FM
t
rr
I
rr
Q
rr
Parameter
Diode Forward Voltage
I
F
= 10A
Test Conditions
T
C
= 25°C
T
C
= 125°C
T
C
= 25°C
T
C
= 125°C
T
C
= 25°C
T
C
= 125°C
T
C
= 25°C
T
C
= 125°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.1
0.9
21
35
2.8
5.6
29.4
98
Max.
1.4
--
--
--
--
--
--
--
Units
V
Diode Reverse Recovery Time
I
F
= 10A
dI/dt = 200A/μs
ns
Diode Peak Reverse Recovery Cur-
rent
Diode Reverse Recovery Charge
A
nC
3
FGA90N30D Rev. A
www.fairchildsemi.com
FGA90N30D 300V PDP IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
100
20V
15V
80
12V
T
C
= 25 C
80
o
Figure 2. Typical Output Characteristics
100
20V
15V
12V
10V
T
C
= 125 C
o
Collector Current, I
C
[A]
10V
Collector Current, I [A]
C
60
V
GE
= 8 V
40
60
V
GE
= 8 V
40
20
20
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
6
C o lle c to r -E m itte r V o lta g e , V
C E
[V ]
C o lle c t o r - E m it te r V o lt a g e , V
C E
[ V ]
Figure3. Typical Saturation Voltage
Characteristics
C o m m o n E m itte r
V
Ge
= 15V
Figure 4. Transfer characteristics
80
Collector Current, I [A]
Collector Current, I
C
[A]
Tc = 25 C
o
Tc = 125 C
60
o
100
C o m m o n E m itte r
V
CE
= 2 0V
T
C
=
25 C
o
o
40
C
T
C
= 125 C
10
20
0
0
1
2
3
1
0
2
4
6
8
10
C o lle c to r - E m itte r V o lta g e , V
C E
[V ]
G a te - E m itte r V o lta g e , V
G E
[V ]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
6
C o m m o n E m it t e r
V
GE
= 15V
90A
1 .8
1 .6
1 .4
1 .2
1 .0
0 .8
0 .6
0 .4
25
50
75
100
o
Figure 6. Saturation Voltage vs. V
GE
2 .4
[V]
2 .2
2 .0
[V]
C o m m o n E m itt e r
o
T
C
= 25 C
5
CE
Collector - Emitter Voltage, V
Collector-Emitter Voltage, V
CE
4
40A
20A
3
2
20A
1
10A
90A
40A
I
c
= 1 0 A
125
0
4
8
12
16
20
C a s e T e m p e ra tu re , T
C
( C )
G a te - E m itte r V o lta g e , V
G E
[V ]
4
FGA90N30D Rev. A
www.fairchildsemi.com
FGA90N30D 300V PDP IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
GE
6
C o m m o n E m it t e r
o
T
C
= 125 C
CE
(Continued)
Figure 8. Capacitance Charaacteristics
[V]
5
C ie s
4
Collector - Emitter Voltage, V
Capacitance [pF]
1000
Coes
3
C re s
2
20A
1
10A
0
4
8
12
40A
90A
100
C o m m o n E m itte r
V
GE
= 0V , f = 1M H z
T
C
= 25 C
o
16
20
0 .1
1
10
G a te - E m itte r V o lta g e , V
G E
[V ]
C o lle c to r - E m itte r V o lta g e , V
C E
[V ]
Figure 9. Gate Charge Characteristics
Figure 10. SOA Characteristics
15
C o m m o n E m it t e r
R
L
= 10 ohm
T
C
= 25 C
o
Ic M A X (P u ls e d )
100
Ic M A X (C o n tin u o u s )
100
μ
s
1m s
10
D C O p e ra tio n
50
μ
s
[V]
Gate-Emitter Voltage, V
10
Vcc = 200V
Collector Current, Ic [A]
GE
1
5
0 .1
0
0
10
20
30
40
50
60
70
80
90
0 .0 1
0 .1
S in g le N o n re p e titive
o
P u lse T c = 2 5 C
C u rve s m u s t b e d e ra te d
lin e a rly w ith in c re a s e
in te m p e ra tu re
1
10
100
1000
G a te C h a rg e , Q
g
[n C ]
C o lle c to r - E m itte r V o lta g e , V
C E
[V ]
Figure 11. Turn-On Characteristics vs. Gate
Resistance
1000
C o m m o n E m itte r
V
CC
= 20 0 V , V
GE
= 15V
I
C
= 2 0 A
o
T
C
= 25 C
T
C
= 125 C
o
Figure 12. Turn-Off Characteristics vs. Gate
Resistance
1000
Switching Time [ns]
Switching Time [ns]
tr
tf
100
100
td (o ff)
td (o n )
C o m m o n E m itte r
V
CC
= 20 0 V , V
GE
= 15 V
I
C
= 2 0 A
T
C
= 25 C
o
10
0
20
40
60
80
100
10
0
20
40
60
T
C
= 125 C
o
80
100
G a te R e s is ta n c e , R
G
[
Ω
]
G a t e R e s is t a n c e , R
G
[
Ω
]
5
FGA90N30D Rev. A
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