FGA180N30D 300V PDP IGBT
June 2006
FGA180N30D
300V PDP IGBT
Features
• High Current Capability
• Low saturation voltage: V
CE(sat),
Typ = 1.1 V@ I
C
= 40A
• High Input Impedance
Description
Employing Unified IGBT Technology, FGA180N30D provides
low conduction and switching loss. FGA180N30D offers the
optimum solution for PDP applications where low condution loss
is essential.
C
G
TO-3PN
G C E
E
Absolute Maximum Rating
TC = 25oC unless otherwise noted
Symbol
V
CES
V
GES
I
C
I
CM
I
F
I
FM
P
D
T
J
T
stg
T
L
Notes:
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
(Note 1)
FGA180N30D
300
±
30
@ T
C
= 25°C
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
180
450
10
40
480
192
-55 to +150
300
300
Units
V
V
A
A
A
A
W
W
°C
°C
°C
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
(1) Repetitive test , pulse width = 100usec , Duty = 0.2
* Ic_pulse limited by max Tj
Thermal Characteristics
Symbol
R
θJC
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case for IGBT
Thermal Resistance, Junction-to-Case for Diode
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
0.26
1.56
40
Units
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGA180N30D Rev.
B
FGA180N30D 300V PDP IGBT
Package Marking and Ordering Information
Device Marking
FGA180N30D
Device
FGA180N30D
Package
TO-3PN
Reel Size
--
Tape Width
--
Quantity
30
Electrical Characteristics of the IGBT
Symbol
Off Characteristics
BV
CES
∆BV
CES
/
∆T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
T
C
= 25°C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
GE
= 0V, I
C
= 250µA
V
GE
= 0V, I
C
= 250µA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
300
--
--
--
--
0.6
--
--
--
--
100
± 250
V
V/°C
µA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 250uA, V
CE
= V
GE
I
C
= 40A
,
V
GE
= 15V
I
C
= 180A
,
V
GE
= 15V,
T
C
= 25°C
I
C
= 180A
,
V
GE
= 15V,
T
C
= 125°C
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
3420
520
150
--
--
--
pF
pF
pF
2.5
--
--
--
4.0
1.1
1.9
2.0
5.0
1.4
--
--
V
V
V
V
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Q
g
Q
ge
Q
gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 200V, I
C
= 40A,
V
GE
= 15V
V
CC
= 200V, I
C
= 40A,
R
G
= 5Ω, V
GE
= 15V,
Resistive Load, T
C
= 125°C
V
CC
= 200V, I
C
= 40A,
R
G
= 5Ω, V
GE
= 15V,
Resistive Load, T
C
= 25°C
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
30
210
100
140
0.26
0.75
1.01
30
230
110
220
0.27
1.0
1.27
185
24
88
--
--
--
300
--
--
--
--
--
--
--
--
--
--
277
36
132
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
nC
nC
nC
2
FGA180N30D Rev.
B
www.fairchildsemi.com
FGA180N30D 300V PDP IGBT
Electrical Characteristics of DIODE
T
C
= 25°C unless otherwise noted
Symbol
V
FM
t
rr
I
rr
Q
rr
Parameter
Diode Forward Voltage
I
F
= 10A
Test Conditions
T
C
= 25°C
T
C
= 125°C
T
C
= 25°C
T
C
= 125°C
T
C
= 25°C
T
C
= 125°C
T
C
= 25°C
T
C
= 125°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.1
0.9
21
35
2.8
5.6
29.4
98
Max.
1.4
--
--
--
--
--
--
--
Units
V
Diode Reverse Recovery Time
I
F
= 10A
dI/dt = 200A/µs
ns
Diode Peak Reverse Recovery Cur-
rent
Diode Reverse Recovery Charge
A
nC
3
FGA180N30D Rev.
B
www.fairchildsemi.com
FGA180N30D 300V PDP IGBT
Typical Performance Characteristics
Typical Saturation VoltageCharacteristics
Figure 1. Typical Output Characteristics
300
Figure 2. Typical Output Characteristics
300
T
C
= 125 C
250
o
T
C
= 25 C
250
o
20V
15V
12V
10V
20V
15V
12V
10V
Collector Current, I
C
[A]
Collector Current, I
C
[A]
200
200
150
150
100
V
G E
= 8V
50
100
V
GE
= 8V
50
0
0
2
4
6
0
0
2
4
6
C ollector-Em itter Voltage, V
C E
[V]
Collector-Emitter Voltage, V
CE
[V]
Figure 3. Saturation Voltage
180
C om m on Em itter
V
G E
= 15V
150
T
C
= 125 C
120
o
Figure 4. Transfer Characteristics
Com m on Em itter
V
GE
= 15V
Collector Current, I
C
[A]
Collector Current, I
C
[A]
T
C
=
25 C
o
100
T
C
=
25 C
o
o
T
C
= 125 C
90
10
60
30
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
1
4
6
8
10
C ollector-Em itter Voltage, V
C E
[V]
Gate-Emitter Voltage, V
G E
[V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
3.0
Figure 6. Saturation Voltage vs.V
GE
6
Collector-Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage, V
CE
[V]
Com m on Em itter
V
GE
= 15V
C om m on E m itter
o
T
C
= 25 C
5
2.5
180A
2.0
4
180A
90A
2
40A
I
C
= 20A
1.5
90A
40A
3
1.0
I
C
= 20A
0.5
1
0.0
25
50
75
o
0
100
125
0
4
8
12
16
20
Case Temperature, T
C
[ C ]
G a te-E m itte r V o ltag e , V
G E
[V ]
4
FGA180N30D Rev.
B
www.fairchildsemi.com
FGA180N30D 300V PDP IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs.V
GE
6
(Continued)
Figure 8. Capacitance Characteristics
8000
C om m on Em itter
V
G E
= 0V, f = 1M H z
6000
C ies
T
C
= 25 C
o
Collector-Emitter Voltage, V
CE
[V]
C om m on Em itter
o
T
C
= 125 C
5
4
Capacitance [pF]
C oes
4000
3
180A
2
90A
40A
1
I
C
= 20A
0
0
4
8
12
16
20
C res
2000
0
0.1
1
10
30
G ate-Em itter Voltage, V
G E
[V]
C ollector-Em itter Voltage, V
CE
[V]
Figure 9. Gate Charge Characteristics
15
14
C om m on Em itter
R
L
= 5
Ω
Figure 10. SOA Characteristics
600
Ic MAX (Pulsed)
100
Ic MAX (Continuous)
100
µ
s
1ms
10
DC Operation
1
50
µ
s
Gate-Emitter Voltage, V
GE
[V]
10
8
6
4
2
0
0
50
100
150
200
250
Vcc = 200V
Collector Current, Ic [A]
12
T
C
= 25 C
o
0.1
0.01
0.1
Single Nonrepetitive
o
Pulse Tc = 25 C
Curves must be derated
linearly with increase
in temperature
1
10
100
1000
G ate Charge, Q
g
[nC ]
Collector - Emitter Voltage, V
CE
[V]
Figure 11. Turn-On Characteristics vs.
Gate Resistance
1000
2000
1000
Figure 12. Turn Off Characteristics vs.
Gate Resistance
Td(off)
tr
Switching Time [ns]
100
Switching Time [ns]
tf
100
Td(on)
Com m on Em itter
V
CC
= 200V, V
GE
= 15V
I
C
= 40A
T
C
= 25 C
T
C
= 125 C
10
0
10
20
30
40
50
o
o
Comm on Emitter
V
CC
= 200V, V
GE
= 15V
I
C
= 40A
T
C
= 25 C
10
0
T
C
= 125 C
10
20
30
40
50
o
o
Gate Resistance, R
G
[
Ω
]
G ate Resistance, R
G
[
Ω
]
5
FGA180N30D Rev.
B
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