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MT36HTS51272FY-667A3D3

产品描述DRAM, 512MX72, CMOS, PDMA240,
产品类别存储    存储   
文件大小647KB,共35页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
标准  
下载文档 详细参数 全文预览

MT36HTS51272FY-667A3D3概述

DRAM, 512MX72, CMOS, PDMA240,

MT36HTS51272FY-667A3D3规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
Objectid1122316063
包装说明DIMM, DIMM240,40
Reach Compliance Codecompliant
ECCN代码EAR99
I/O 类型COMMON
JESD-30 代码R-PDMA-N240
JESD-609代码e3
内存密度38654705664 bit
内存宽度72
湿度敏感等级1
端子数量240
字数536870912 words
字数代码512000000
最高工作温度95 °C
最低工作温度
组织512MX72
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码DIMM
封装等效代码DIMM240,40
封装形状RECTANGULAR
封装形式MICROELECTRONIC ASSEMBLY
电源1.5,1.8 V
认证状态Not Qualified
刷新周期8192
表面贴装NO
技术CMOS
温度等级OTHER
端子面层MATTE TIN
端子形式NO LEAD
端子节距1 mm
端子位置DUAL

文档预览

下载PDF文档
Preliminary
240-Pin 4GB DDR2 SDRAM FBDIMM (DR, FB, x72)
Features
DDR2 SDRAM FBDIMM
MT36HTS51272F – 4GB
For the latest data sheet, refer to Micron’s Web site:
www.micron.com
Features
• 240-pin DDR2 fully buffered, dual in-line memory
module (FBDIMM) with ECC to detect and report
channel errors to the host memory controller
• Fast data transfer rates: PC2-4200 and PC2-5300
using 533 MT/s and 667 MT/s DDR2 SDRAM
components
• 3.2 Gb/s and 4.0 Gb/s link transfer rates
• High-speed, differential, point-to-point link
between host memory controller and the AMB using
serial, dual-simplex bit lanes
10-pair southbound (data path to FBDIMM)
14-pair northbound (data path from FBDIMM)
• Fault tolerant; can work around a bad bit lane in
each direction
• High-density scaling with up to 8 dual-rank modules
(288 DDR2 SDRAM devices) per channel
• SMBus interface to AMB for configuration register
access
• In-band and out-of-band command access
• Deterministic protocol
Enables memory controller to optimize DRAM
accesses for maximum performance
Delivers precise control and repeatable memory
behavior
• Automatic DDR2 SDRAM bus and channel
calibration
• Transmitter de-emphasis to reduce ISI
• MBIST and IBIST test functions
• Transparent mode for DDR2 SDRAM test support
• V
DD
= V
DD
Q = +1.8V for DDR2 SDRAM
• V
REF
= 0 .9V SDRAM C/A termination
• V
CC
= 1.5V for advanced memory buffer (AMB)
• V
DDSPD
= +1.7V to +3.6V for SPD EEPROM
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
• Dual rank
• Supports 95°C operation with 2X refresh (
t
REFI =
7.8µs at or below 85°C;
t
REFI = 3.9µs above 85°C)
Figure 1:
240-Pin FBDIMM (MO-256 R/C J)
PCB height: 30.35mm (1.19in)
Options
• Package
240-pin FBDIMM (lead-free)
• Frequency/CL
1
3.75ns @ CL = 5 (DDR2-667)
3.75ns @ CL = 4 (DDR2-533)
• PCB height
30.35mm (1.19in)
Notes: 1. CL = CAS (READ) latency.
Marking
Y
-667
-53E
PDF: 09005aef822148b0/source: 09005aef82214898
HTS36C512x72F_1.fm - Rev. A 4/06 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2006 Micron Technology, Inc. All rights reserved.
‡Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by
Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications.

 
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