Data Sheet
RJP65T54DPM-A0
650V - 30A - IGBT
Application: Partial switching circuit
Features
Low collector to emitter saturation voltage
V
CE(sat)
= 1.35 V typ. (at I
C
= 30 A, V
GE
= 15 V, Ta = 25°C)
Isolated package
Trench gate and thin wafer technology (G7H series)
High speed switching
Operation frequency (50Hz
≤
f
˂
20kHz)
Not guarantee short circuit withstand time
R07DS1365EJ0110
Rev.1.10
Dec 19, 2016
Outline
RENESAS Package code: PRSS0003ZP-A
(Package name: TO-3PFP)
C
G
1. Gate
2. Collector
3. Emitter
E
1
2
3
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector dissipation
Junction to case thermal resistance
Junction temperature
Storage temperature
Symbol
V
CES
V
GES
I
C
I
C
i
C
(peak)
Note1
P
C
j-c
Tj
Note2
Tstg
Ratings
650
30
60
30
225
63.5
2.35
175
–55 to +150
Unit
V
V
A
A
A
W
°C/W
°C
°C
Note: Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect
a reliability even if it are within the absolute maximum ratings. Please consider derating condition for appropriate
reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage of
Semiconductor Devices) and individual reliability data.
R07DS1365EJ0110 Rev.1.10
Dec 19, 2016
Page 1 of 7
RJP65T54DPM-A0
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Total gate charge
Gate to emitter charge
Gate to collector charge
Input capacitance
Output capacitance
Reveres transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on loss energy
Turn-off loss energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on loss energy
Turn-off loss energy
Symbol
I
CES
I
GES
V
GE(off)
V
CE(sat)
Qg
Qge
Qgc
Cies
Coes
Cres
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Min
5
Typ
1.35
72
10
30
1400
42
30
35
20
120
130
0.33
0.76
31
22
128
156
0.47
1.04
Max
10
±1
7
1.68
Unit
A
A
V
V
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
mJ
mJ
ns
ns
ns
ns
mJ
mJ
Test Conditions
V
CE
= 650 V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10V, I
C
= 1.0 mA
I
C
= 30 A, V
GE
= 15V
Note3
V
CE
= 400 V
V
GE
= 15V
Ic= 30A
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
V
CC
= 400 V
V
GE
= 15 V, I
C
= 30 A
Rg = 10
T
C
= 25 °C
Inductive load
Note4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
CC
= 400 V
V
GE
= 15 V, I
C
= 30 A
Rg = 10
T
C
= 150°C
Inductive load
Note4
Notes: 1. PW
10
s,
duty cycle
1%
2. Please use this device in the thermal conditions which the junction temperature does not exceed 175°C.
Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175°C.
3. Pulse test
4. Switching time test circuit and waveform are shown below.
R07DS1365EJ0110 Rev.1.10
Dec 19, 2016
Page 2 of 7
RJP65T54DPM-A0
Main Characteristics
Collector Dissipation vs.
Case Temperature
70
70
Maximum DC Collector Current vs.
Case Temperature
Collector Dissipation Pc (W)
Collector Current I
C
(A)
60
50
40
30
20
10
0
0
25
50
75
100 125 150 175
60
50
40
30
20
10
0
0
25
50
75
100 125 150 175
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Maximum Safe Operation Area
1000
90
Typical Transfer Characteristics
Collector Current I
C
(A)
100
PW
10
10
=1
0
0
μ
Collector Current I
C
(A)
μ
s
s
60
150
°
C
Tc = 25
°
C
1
30
V
CE
= 5 V
Pulse Test
0
0
2
4
6
8
10
0.1
Tc = 25°C
Single pulse
10
100
1000
0.01
1
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
Typical Output Characteristics
90
15 V
11 V
10 V
60
Pulse Test
Tc = 25
°
C
90
Typical Output Characteristics
V
Pulse Test
Tc = 150
°
C
Collector Current I
C
(A)
9.0
Collector Current I
C
(A)
V
15 V
11 V
10 V
60
0
9.
8.0
30
V
30
8.0 V
V
GE
= 7.0 V
0
0
2
4
6
8
10
V
GE
= 7.0 V
0
0
2
4
6
8
10
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
R07DS1365EJ0110 Rev.1.10
Dec 19, 2016
Page 3 of 7
RJP65T54DPM-A0
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
5
Tc = 25
°
C
Pulse Test
4
I
C
= 30 A
15 A
7.5 A
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
I
C
= 30 A
15 A
7.5 A
Tc = 150
°
C
Pulse Test
4
3
3
2
2
1
1
0
0
4
8
12
16
20
4
8
12
16
20
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
10
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
3
2.5
2
1.5
1
0.5
0
−25
V
GE
= 15 V
Pulse Test
I
C
= 60
A
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
8
I
C
= 10 mA
6
30 A
4
1 mA
15 A
2
V
CE
= 10 V
Pulse Test
0
−25
0
25
50
75
100 125 150
0
25
50
75
100 125 150
Case Temparature Tc (°C)
Case Temparature Tc (
°
C)
Typical Capacitance vs.
Collector to Emitter Voltage
10000
Cies
Dynamic Input Characteristics (Typical)
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
800
V
CC
= 400 V
I
C
= 30 A
Tc = 25
°
C
16
V
GE
12
Capacitance C (pF)
1000
600
100
Coes
10
V
GE
= 0 V
f = 1 MHz
Tc = 25
°
C
0
50
100
150
200
Cres
400
8
200
V
CE
0
0
20
40
60
80
4
1
250
300
0
100
Collector to Emitter Voltage V
CE
(V)
Gate Charge Qg (nC)
R07DS1365EJ0110 Rev.1.10
Dec 19, 2016
Page 4 of 7
RJP65T54DPM-A0
Switching Characteristics (Typical) (1)
Swithing Energy Losses E (mJ)
1000
Switching Characteristics (Typical) (2)
10
V
CC
= 400 V, V
GE
= 15 V
Rg = 10
Ω,
Tc = 150
°
C
Switching Times t (ns)
tf
100
td(off)
td(on)
10
tr
V
CC
= 400 V, V
GE
= 15 V
Rg = 10
Ω,
Tc = 150
°
C
1
10
100
1
Eo
ff
Eo
n
1
0.1
1
10
100
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (3)
1000
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (4)
10
Swithing Energy Losses E (mJ)
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A, Tc = 150
°
C
Switching Times t (ns)
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A, Tc = 150
°
C
100
tf
td(off)
Eoff
1
Eo
n
td(on)
tr
10
1
10
100
0.1
1
10
100
Gate Registance Rg (Ω)
(Inductive load)
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (6)
Swithing Energy Losses E (mJ)
10
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A, Rg = 10
Ω
Switching Characteristics (Typical) (5)
1000
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A, Rg = 10
Ω
Switching Times t (ns)
tf
100
td(off)
td(on)
1
Eoff
Eon
tr
10
25
50
75
100
125
150
0.1
25
50
75
100
125
150
Case Temperature Tc (°C)
(Inductive load)
Case Temperature Tc (°C)
(Inductive load)
R07DS1365EJ0110 Rev.1.10
Dec 19, 2016
Page 5 of 7
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