Preliminary
Datasheet
RJH65T46DPQ-A0
650V - 40A - IGBT
Application: Power Factor Correction circuit
Features
Low collector to emitter saturation voltage
V
CE(sat)
= 1.8 V typ. (at I
C
= 40 A, V
GE
= 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology (G7H series)
High speed switching
t
f
= 45 ns typ. (at V
CC
= 400 V, V
GE
= 15 V , I
C
= 40 A, Rg = 10
,
Ta = 25°CInductive load)
Operation frequency (20kHz
≤
f
˂
100kHz)
Not guarantee short circuit withstand time
R07DS1259EJ0100
Rev.1.00
May 18, 2015
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
G
1. Gate
2. Collector
3. Emitter
4. Collector
E
1 2
3
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode
Forward current
Tc = 25 °C
Tc = 100 °C
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Symbol
V
CES
/ V
R
V
GES
I
C
I
C
i
C
(peak)
Note1
I
DF
I
DF
i
DF
(peak)
Note1
P
C
j-c
j-cd
Tj
Note2
Tstg
Ratings
650
30
80
40
300
30
15
100
340.9
0.44
1.33
175
–55 to +150
Unit
V
V
A
A
A
A
A
A
W
°C/W
°C/ W
°C
°C
Notes: 1. PW
10
s,
duty cycle
1%
2. Please use this device in the thermal conditions which the junction temperature does not exceed 175°C.
Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175°C.
R07DS1259EJ0100 Rev.1.00
May 18, 2015
Page 1 of 9
RJH65T46DPQ-A0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on loss energy
Turn-off loss energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on loss energy
Turn-off loss energy
Total switching energy
FRD forward voltage
FRD reverse recovery time
Symbol
I
CES
/ I
R
I
GES
V
GE(off)
V
CE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
V
F
t
rr
Min
4.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
1.8
3000
92
55
138
22
57
45
30
170
45
0.45
0.55
1.00
45
30
185
50
0.57
0.63
1.20
1.7
100
Max
100
±1
7.0
2.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.2
—
Unit
A
A
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
V
ns
Test Conditions
V
CE
= 650 V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10V, I
C
= 1.33 mA
I
C
= 40 A, V
GE
= 15V
Note3
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
VGE = 15 V
VCE = 400 V
IC = 40 A
V
CC
= 400 V
V
GE
= 15 V
I
C
= 40 A
Rg = 10
T
C
= 25 °C
Inductive load
Note4
V
CC
= 400 V
V
GE
= 15 V
I
C
= 40 A
Rg = 10
T
C
= 150 °C
Inductive load
Note4
I
F
= 15 A
Note3
I
F
= 15 A, di
F
/dt = 300 A/s
Notes: 3. Pulse test
4. Switching time test circuit and waveform are shown below.
R07DS1259EJ0100 Rev.1.00
May 18, 2015
Page 2 of 9
RJH65T46DPQ-A0
Preliminary
Main Characteristics
Collector Dissipation vs.
Case Temperature
400
120
Maximum DC Collector Current vs.
Case Temperature
Collector Dissipation Pc (W)
300
Collector Current I
C
(A)
100
80
60
40
20
0
200
100
0
0
25
50
75
100 125 150 175
0
25
50
75
100 125 150 175
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Maximum Safe Operation Area
1000
160
Typical Transfer Characteristics
V
CE
= 10 V
Pulse Test
Collector Current I
C
(A)
100
10
0
μ
s
=
Collector Current I
C
(A)
PW
10
μ
s
120
10
80
1
Tc = 25°C
Single pulse
10
100
1000
40
Tc = 25
°
C
150
°
C
0.1
1
0
0
4
8
12
16
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
Typical Output Characteristics
160
Pulse Test
2
Tc = 25
°
C
10 V
15 V
160
9.0V
Typical Output Characteristics
Pulse Test
2
Tc = 150
°
C
10 V
15 V
8.0V
80
7.5V
40
V
GE
= 7.0 V
0
0
2
4
6
8
10
9.0V
8.5V
Collector Current I
C
(A)
120
Collector Current I
C
(A)
10
8.5V
120
80
8.0V
40
V
GE
= 7.5 V
0
0
2
4
6
8
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
R07DS1259EJ0100 Rev.1.00
May 18, 2015
Page 3 of 9
RJH65T46DPQ-A0
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
5
Tc = 25
°
C
Pulse Test
4
I
C
= 80 A
3
40 A
20 A
Preliminary
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
I
C
= 80 A
4
40 A
20 A
Tc = 150
°
C
Pulse Test
3
2
2
1
1
0
0
4
8
12
16
20
4
8
12
16
20
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
10
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
4.0
3.5
3.0
2.5
40 A
2.0
1.5
1.0
0.5
−25
20 A
V
GE
= 15 V
Pulse Test
I
C
= 80 A
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
8
I
C
= 10 mA
6
4
1.33 mA
2
V
CE
= 10 V
Pulse Test
0
−25
0
25
50
75
100 125 150
0
25
50
75
100 125 150
Case Temparature Tc (°C)
Case Temparature Tc (
°
C)
Frequency Characteristics (Typical)
120
Collector Current
Ic(max) (A)
100
80
Ic(max)
60
40
20
0
0
Collector current wave
(Square wave)
Tj = 175°C, Tc = 90°C, V
CE
= 400 V
V
GE
= 15 V, Rg = 10Ω , duty = 50%
1
10
100
Frequency f (kHz)
R07DS1259EJ0100 Rev.1.00
May 18, 2015
Page 4 of 9
RJH65T46DPQ-A0
Switching Characteristics (Typical) (1)
V
CC
= 400 V, V
GE
= 15 V
Rg = 10
Ω,
Tc = 150
°
C
td(off)
100
tf
Preliminary
Switching Characteristics (Typical) (2)
Swithing Energy Losses E (mJ)
10
V
CC
= 400 V, V
GE
= 15 V
Rg = 10
Ω,
Tc = 150
°
C
1000
Switching Times t (ns)
1
Eoff
Eon
0.1
10
td(on)
tr
10
10
20
30
50
70
100
20
30
50
70
100
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (3)
10000
V
CC
= 400 V, V
GE
= 15 V
I
C
= 40 A, Tc = 150
°
C
1000
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (4)
10
Swithing Energy Losses E (mJ)
Switching Times t (ns)
V
CC
= 400 V, V
GE
= 15 V
I
C
= 40 A, Tc = 150
°
C
1
Eoff
Eon
100
td(off)
tf
tr
td(on)
10
1
10
100
0.1
1
10
100
Gate Registance Rg (Ω)
(Inductive load)
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (6)
Swithing Energy Losses E (mJ)
10
V
CC
= 400 V, V
GE
= 15 V
I
C
= 40 A, Rg = 10
Ω
Switching Characteristics (Typical) (5)
1000
V
CC
= 400 V, V
GE
= 15 V
I
C
= 40 A, Rg = 10
Ω
td(off)
100
tf
td(on)
tr
10
25
Switching Times t (ns)
1
Eoff
Eon
50
75
100
125
150
0.1
25
50
75
100
125
150
Case Temperature Tc (°C)
(Inductive load)
Case Temperature Tc (°C)
(Inductive load)
R07DS1259EJ0100 Rev.1.00
May 18, 2015
Page 5 of 9
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
