FGPF30N30TD 300V, 30A PDP Trench IGBT
September 2007
FGPF30N30TD
300V, 30A PDP Trench IGBT
Features
• High current capability
• Low saturation voltage: V
CE(sat)
=1.4V @ I
C
= 20A
• High input impedance
• Fast switching
• RoHS complaint
tm
General Description
Using Novel Trench IGBT Technology, Fairchild’s new sesries of
trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
Applications
• PDP System
C
TO-220F
1
1.Gate
2.Collector
3.Emitter
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C pulse (1)
I
F
I
FM
P
D
T
J
T
stg
T
L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ T
C
= 25
o
C
@ T
C
= 100
o
C
@ T
C
=
25
o
C
Ratings
300
±
30
80
10
40
44.6
17.8
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
W
W
o
o
@ T
C
= 100°C
C
C
o
C
Thermal Characteristics
Symbol
R
θJC
(IGBT)
R
θJC
(DIODE)
R
θJA
Notes :
(1) Repetitive tese, Pulse width = 100usec, Duty = 0.1
* Ic_pluse limited by max Tj
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction-to-Case for Diode
Thermal Resistance, Junction to Ambient
Typ.
-
--
-
Max.
2.8
3.0
62.5
Units
o
C/W
o
C/W
o
C/W
©2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGPF30N30TD Rev. A
FGPF30N30TD 300V, 30A PDP Trench IGBT
Package Marking and Ordering Information
Device Marking
FGPF30N30TD
Device
FGPF30N30TDTU
Package
TO-220F
Packaging
Type
Rail / Tube
Max Qty
Qty per Tube
50ea
per Box
-
Electrical Characteristics of the IGBT
Symbol
Off Characteristics
BV
CES
∆BV
CES
/
∆T
J
I
CES
I
GES
T
C
= 25°C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector to Emitter Breakdown Voltage V
GE
= 0V, I
C
= 250µA
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 250µA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
300
-
-
-
-
0.26
-
-
-
-
100
±400
V
V/
o
C
µA
nA
On Characteristics
V
GE(th)
G-E Threshold Voltage
I
C
= 250µA, V
CE
= V
GE
I
C
= 10A
,
V
GE
= 15V
I
C
= 20A
,
V
GE
= 15V
V
CE(sat)
Collector to Emitter
Saturation Voltage
I
C
= 30A
,
V
GE
= 15V,
T
C
= 25
o
C
I
C
= 30A
,
V
GE
= 15V,
T
C
= 125
o
C
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
-
-
-
1540
65
55
--
--
--
pF
pF
pF
3.0
-
-
-
-
4.5
1.2
1.4
1.7
1.6
5.5
1.5
-
-
-
V
V
V
V
V
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
ge
Q
gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
V
CE
= 200V, I
C
= 20A,
V
GE
= 15V
V
CC
= 200V, I
C
= 20A,
R
G
= 20Ω, V
GE
= 15V,
Inductive Load, T
C
= 125
o
C
V
CC
= 200V, I
C
= 20A,
R
G
= 20Ω, V
GE
= 15V,
Inductive Load, T
C
= 25
o
C
-
-
-
-
-
-
-
-
-
-
-
22
33
130
180
21
34
140
260
65
10
26
--
--
--
300
--
--
--
--
--
--
--
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
2
FGPF30N30TD Rev. A
www.fairchildsemi.com
FGPF30N30TD 300V, 30A PDP Trench IGBT
Electrical Characteristics of DIODE
T
C
= 25°C unless otherwise noted
Symbol
V
FM
t
rr
I
rr
Q
rr
Parameter
Diode Forward Voltage
I
F
= 10A
Test Conditions
T
C
= 25°C
T
C
= 125°C
T
C
= 25°C
T
C
= 125°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.1
0.9
22
35
2.7
5.6
29.7
98
Max.
1.4
--
--
--
--
--
--
--
Units
V
Diode Reverse Recovery Time
ns
I
F
= 10A
Diode Peak Reverse Recovery Cur- dI/dt = 200A/µs
T
C
= 25°C
rent
Diode Forward Voltage T
C
= 125°C
Diode Reverse Recovery Charge
T
C
= 25°C
T
C
= 125°C
A
nC
3
FGPF30N30TD Rev. A
www.fairchildsemi.com
FGPF30N30TD 300V, 30A PDP Trench IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
80
T
C
= 25 C
o
Figure 2. Typical Saturation Voltage
Characteristics
80
T
C
= 125 C
o
20V
15V
12V
20V
12V
15V
10V
Collector Current, I
C
[A]
60
Collector Current, I
C
[A]
10V
60
40
40
V
GE
= 8V
V
GE
= 8V
20
20
0
0.0
1.5
3.0
4.5
Collector-Emitter Voltage, V
CE
[V]
6.0
0
0.0
1.5
3.0
4.5
Collector-Emitter Voltage, V
CE
[V]
6.0
Figure 3. Typical Saturation Voltage
Characteritics
80
Common Emitter
V
GE
= 15V
Figure 4. Transfer Characteristics
80
Common Emitter
V
CE
= 20V
Collector Current, I
C
[A]
60
Collector Current, I
C
[A]
T
C
= 25 C
T
C
= 125 C
o
o
T
C
= 25 C
o
60
T = 125
o
C
C
40
40
20
20
0
0
1
2
3
Collector-Emitter Voltage, V
CE
[V]
4
0
0
2
4
6
8
10
Gate-Emitter Voltage,V
GE
[V]
12
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
2.0
Collector-Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage
,
V
CE
[V]
Common Emitter
V
GE
= 15V
Figure 6. Saturation Voltage vs. Vge
20
Common Emitter
T
C
= 25 C
o
1.8
30A
16
1.6
1.4
1.2
I
C
= 10A
12
20A
8
30A
20A
I
C
= 10A
1.0
0.8
25
4
50
75
100
125
o
Collector-EmitterCase Temperature, T
C
[
C
]
0
3
6
9
12
Gate-Emitter Voltage, V
GE
[V]
15
4
FGPF30N30TD Rev. A
www.fairchildsemi.com
FGPF30N30TD 300V, 30A PDP Trench IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. Vge
20
Common Emitter
T
C
= 125 C
o
(Continued)
Figure 8. Capacitance Characteristics
2500
Common Emitter
V
GE
= 0V, f = 1MHz
C
ies
Collector-Emitter Voltage, V
CE
[
V
]
16
Capacitance [pF]
2000
T
C
= 25 C
o
12
1500
8
30A
1000
C
oes
4
I
C
= 10A
20A
500
C
res
0
3
6
9
12
Gate-Emitter Voltage, V
GE
[V]
15
0
1
10
Collector-Emitter Voltage, V
CE
[V]
30
Figure 9. Gate Charge Characteristics
15
Common Emitter
o
Figure 10. SOA Characteristics
300
Gate-Emitter Voltage, V
GE
[V]
T
C
= 25 C
100
Collector Current, I
c
[A]
I
C
MAX (Pulse)
50
µ
s
100
µ
s
12
V
CC
= 100V
10
9
200V
I
C
MAX (Continuous)
1ms
1
10 ms
Single Nonrepetitive
DC
o
6
3
0.1
Pulse T
C
= 25 C
Curves must be derated
linearly with increase
in temperature
0
0
20
40
60
Gate Charge, Q
g
[nC]
80
0.01
0.1
1
10
100
Collector-Emitter Voltage, V
CE
[V]
600
Figure 11. Turn-On Characteristics vs.
Gate Resistance
100
Figure 12. Turn-Off Characteristics vs.
Gate Resistance
1000
t
f
Switching Time [ns]
t
r
Switching Time [ns]
100
t
d(off)
t
d(on)
10
Common Emitter
V
CC
= 200V, V
GE
= 15V
I
C
= 20A
T
C
= 25 C
T
C
= 125 C
o
o
Common Emitter
V
CC
= 200V, V
GE
= 15V
I
C
= 20A
10
50
5
T
C
= 25 C
T
C
= 125 C
o
o
5
0
10
20
30
40
Gate Resistance, R
G
[
Ω
]
0
10
20
30
40
50
Gate Resistance, R
G
[
Ω
]
5
FGPF30N30TD Rev. A
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