PD - 96012B
IRF6100PbF
HEXFET
®
Power MOSFET
l
l
l
l
l
l
l
Ultra Low
R
DS(on)
per Footprint Area
Low
Thermal Resistance
P-Channel MOSFET
One-third Footprint of SOT-23
Super Low Profile (<.8mm)
Available Tested on Tape & Reel
Lead-Free
V
DSS
-20V
R
DS(on)
max
0.065
Ω
@V
GS
= -4.5V
0.095
Ω
@V
GS
= -2.5V
I
D
-5.1A
-4.1A
Description
True chip-scale packaging is available from International
Rectifier. Through the use of advanced processing tech-
niques, and a unique packaging concept, extremely low
on-resistance and the highest power densities in the
industry have been made available for battery and load
management applications. These benefits, combined with
the ruggedized device design , that International Rectifier
is well known for,
provides the designer with an ex-
D
G
S
FlipFET
ISOMETRIC
tremely efficient and reliable device.
The FlipFET™ package, is one-third the footprint of a
comparable SOT-23 package and has a profile of less
than .8mm. Combined with the low thermal resistance of
the die level device, this makes the FlipFET™ the best
device for application where printed circuit board space is
at a premium and in extremely thin application environ-
ments such as battery packs, cell phones and PCMCIA
cards.
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
±5.1
±3.5
±35
2.2
1.4
17
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
Symbol
R
θJA
R
θJ-PCB
Parameter
Junction-to-Ambient
Junction-to-PCB mounted
Typ.
35
Max.
56.5
–––
Units
°C/W
www.irf.com
05/17/06
1
IRF6100PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
-20
–––
–––
-0.45
9.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= -250µA
-0.010 ––– V/°C Reference to 25°C, I
D
= -1mA
––– 0.065
V
GS
= -4.5V, I
D
= -5.1A
Ω
––– 0.095
V
GS
= -2.5V, I
D
= -4.1A
––– -1.2
V
V
DS
= V
GS
, I
D
= -250µA
––– –––
S
V
DS
= -10V, I
D
= -5.1A
––– -1.0
V
DS
= -20V, V
GS
= 0V
µA
––– -25
V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
––– 100
V
GS
= 12V
nA
––– -100
V
GS
= -12V
14
21
I
D
= -5.1A
1.9 2.9
nC V
DS
= -16V
5.0 7.5
V
GS
= -5.0V
12 –––
V
DD
= -10V
12 –––
I
D
= -1.0A
ns
50 –––
R
G
= 5.8Ω
50 –––
V
GS
= -4.5V
1230 –––
V
GS
= 0V
250 –––
pF
V
DS
= -15V
180 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
48
34
-2.2
A
-33
-1.2
72
51
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -2.2A, V
GS
= 0V
T
J
= 25°C, I
F
= -2.2A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square 2oz copper on FR-4.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
www.irf.com
IRF6100PbF
100
VGS
-7.00V
-5.00V
-4.50V
-2.50V
-1.80V
-1.50V
-1.20V
BOTTOM -1.00V
TOP
100
-I
D
, Drain-to-Source Current (A)
10
-I
D
, Drain-to-Source Current (A)
10
VGS
-7.00V
-5.00V
-4.50V
-2.50V
-1.80V
-1.50V
-1.20V
BOTTOM -1.00V
TOP
1
-1.00V
0.1
1
-1.00V
0.01
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
T
J
= 25
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -5.1A
-I
D
, Drain-to-Source Current (A)
1.5
T
J
= 150
°
C
10
1.0
0.5
1
1.0
V DS = -15V
20µs PULSE WIDTH
1.5
2.0
2.5
3.0
0.0
-60 -40 -20
V
GS
= -4.5V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF6100PbF
2000
1600
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
I
D
=
-5.1A
V
DS
=-16V
8
C, Capacitance (pF)
Ciss
1200
6
800
4
400
Coss
Crss
1
10
100
2
0
0
0
4
8
12
16
20
24
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
T
J
= 150
°
C
-I
D
, Drain Current (A)
I
100
10us
10
100us
1ms
1
10ms
1
T
J
= 25
°
C
0.1
0.0
V
GS
= 0 V
0.4
0.8
1.2
1.6
2.0
2.4
0.1
0.1
T
A
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
100
-V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRF6100PbF
6.0
V
DS
5.0
R
D
V
GS
R
G
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
-I
D
, Drain Current (A)
D.U.T.
+
4.0
3.0
2.0
Fig 10a.
Switching Time Test Circuit
1.0
t
d(on)
t
r
t
d(off)
t
f
0.0
V
GS
25
50
T
C
, Case Temperature ( °C)
75
100
125
150
10%
Fig 9.
Maximum Drain Current Vs.
Case Temperature
90%
V
DS
Fig 10b.
Switching Time Waveforms
100
Thermal Response (Z
thJA
)
D = 0.50
0.20
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
P
DM
t
1
t
2
10
0.1
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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V
DD
5
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