PD - 96139A
IRFH7923PbF
Applications
l
HEXFET
®
Power MOSFET
l
High Frequency Point-of-Load Synchronous Buck
Converter for Applications in Neworking &
Computing Systems
Optimized for Control FET Applications
V
DSS
30V
R
DS(on)
max
Qg
8.7m @V
GS
= 10V 8.7nC
:
Benefits
l
l
l
l
l
l
l
l
Very low R
DS(ON)
at 4.5V V
GS
Low Gate Charge
Fully Characterized Avalanche Voltage and
Current
100% Tested for R
G
Lead-Free (Qualified up to 260°C Reflow)
RoHS compliant (Halogen Free)
Low Thermal Resistance
Large Source Lead for more reliable Soldering
D
D
D
D
S
S
S
G
PQFN
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
± 20
15
12
33
120
3.1
Units
V
g
Power Dissipation
g
Power Dissipation
c
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
g
2
0.03
-55 to + 150
Storage Temperature Range
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
f
Typ.
–––
–––
Max.
8.3
40
Units
°C/W
Junction-to-Ambient
g
Notes
through
are on page 9
www.irf.com
06/18/08
1
IRFH7923PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min. Typ. Max. Units
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
29
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.024
6.8
9.3
1.8
-5.8
–––
–––
–––
–––
–––
8.7
1.8
1.1
2.7
3.1
3.8
4.9
2.0
7.1
8.7
8.6
4.9
1095
235
110
–––
–––
8.7
11.9
Conditions
V V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ
V
GS
= 10V, I
D
= 15A
V
GS
= 4.5V, I
D
= 12A
2.35
V
V
DS
= V
GS
, I
D
= 25µA
––– mV/°C
1.0
150
100
-100
–––
13
–––
–––
–––
–––
–––
–––
3.0
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
µA
nA
S
e
e
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 12A
V
DS
= 15V
V
GS
= 4.5V
I
D
= 12A
See Fig.17 & 18
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
nC
nC
Ω
ns
I
D
= 12A
R
G
=1.8Ω
See Fig.15
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
Max.
27
12
Units
mJ
A
pF
Avalanche Characteristics
E
AS
I
AR
d
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
12
11
3.9
A
120
1.0
18
17
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
T
J
= 25°C, I
F
= 12A, V
DD
= 15V
di/dt = 300A/µs
e
eÃ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFH7923PbF
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
ID, Drain-to-Source Current (A)
100
10
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
2.3V
1
1
2.3V
0.1
≤
60µs PULSE WIDTH
0.01
0.1
1
Tj = 25°C
10
0.1
≤
60µs PULSE WIDTH
Tj = 150°C
0.1
1
100
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
ID = 15A
VGS = 10V
ID, Drain-to-Source Current (A)
100
1.5
10
T J = 150°C
T J = 25°C
1
VDS = 15V
≤
60µs PULSE WIDTH
0.1
1
2
3
4
5
6
1.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFH7923PbF
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
14.0
ID= 12A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
C, Capacitance (pF)
1000
Ciss
Coss
VDS= 24V
VDS= 15V
100
Crss
10
1
10
VDS, Drain-to-Source Voltage (V)
100
0
5
10
15
20
25
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
1msec
100
T J = 150°C
10
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
1.00
T J = 25°C
1
10msec
VGS = 0V
0.10
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
0.1
0
T A = 25°C
Tj = 150°C
Single Pulse
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFH7923PbF
16
VGS(th) , Gate Threshold Voltage (V)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
ID = 25µA
14
12
10
8
6
4
2
0
25
50
75
100
125
150
T J , Junction Temperature (°C)
ID, Drain Current (A)
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
Fig 10.
Threshold Voltage Vs. Temperature
100
Thermal Response ( Z thJA ) °C/W
D = 0.50
10
0.20
0.10
0.05
0.02
0.01
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
4
R
5
R
5
τ
a
τ
1
τ
2
τ
3
τ
4
τ
5
τ
5
1
Ri (°C/W)
2.185739
6.878609
10.36243
11.05530
9.52069
τ
J
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci i Ri
0.000402
0.013524
0.33841
4.926
63.0
τi
(sec)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.1
1
10
100
0.001
1E-006
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
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