This product complies with the RoHS Directive (EU 2002/95/EC).
Silicon MOSFETs (Small Signal)
2SK3539
Silicon N-channel MOSFET
Unit: mm
(0.425)
For switching
■
Features
•
High-speed switching
•
Wide frequency band
•
Gate protection diode built-in
0.3
+0.1
–0.0
3
0.15
+0.10
–0.05
1.25
±0.10
M
ain
Di
sc te
on na
tin nc
ue e/
d
1
2
(0.65) (0.65)
1.3
±0.1
2.0
±0.2
2.1
±0.1
5˚
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
DS
I
D
Drain-source voltage
Gate-source voltage (Drain open)
Drain current
V
GSO
I
DP
P
D
Peak drain current
Power dissipation
Channel temperature
Storage temperature
T
ch
T
stg
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Symbol
V
DSS
I
DSS
V
th
I
GSS
Drain-source surrender voltage
Drain-source cutoff current
Gate-Source cutoff current
Gate threshold voltage
Drain-source ON resistance
R
DS(on)
Y
fs
C
iss
C
oss
C
rss
t
on
t
off
Short-circuit output capacitance (Common source)
Reverse transfer capacitance (Common source)
Turn-on time
*
Turn-off time
*
Ma
int
en
Short-circuit forward transfer
capacitance (Common source)
an
Forward trancfer admitance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: t
on
, t
off
test circuit
V
OUT
470
Ω
90%
10%
V
IN
V
GS
=
3.0 V
V
DD
=
3 V V
OUT
10%
50
Ω
90%
100
µF
d
pla inc
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Rating
50
±7
Unit
V
V
10˚
0.9
±0.1
0.9
+0.2
–0.1
100
200
150
150
mA
mA
°C
1: Gate
2: Source
3: Drain
EIAJ: SC-70
SMini3-G1 Package
mW
°C
Marking Symbol: 5F
−55
to
+150
Conditions
Min
50
0 to 0.1
Typ
Max
Unit
V
µA
µA
V
Ω
I
D
=
10
µA,
V
GS
=
0
ue
V
DS
=
50 V, V
GS
=
0
1.0
tin
V
GS
= ±7
V, V
DS
=
0
±5.0
1.5
15
12
on
I
D
=
1.0
µA,
V
DS
=
3 V
0.9
1.2
8
6
isc
I
D
=
10 mA, V
GS
=
2.5 V
I
D
=
10 mA, V
GS
=
4.0 V
ce
/D
I
D
=
10 mA, V
DS
=
3 V, f
=
1 kHz
20
60
mS
pF
pF
pF
ns
ns
V
DS
= 3 V, V
GS
= 0, f = 1 MHz
12
7
3
V
DD
=
3 V, V
GS
=
0 V to 3 V, R
L
=
470
Ω
V
DD
=
3 V, V
GS
=
3 V to 0 V, R
L
=
470
Ω
200
200
t
on
Publication date: January 2004
SJF00035BED
t
off
0.2
±0.1
1
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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.jp rm
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/ ion
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int
en
an
ce
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ain
Di
sc te
on na
tin nc
ue e/
d
/D
isc
on
tin
ue
di
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