FGA90N33ATD 330V, 90A PDP Trench IGBT
August 2011
FGA90N33ATD
330V, 90A PDP Trench IGBT
Features
• High current capability
• Low saturation voltage: V
CE(sat)
=1.1V @ I
C
= 20A
• High input impedance
• Fast switching
• RoHS compliant
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
Applications
• PDP System
C
G
TO-3P
G C E
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
C pulse(1)
I
C pulse(2)
P
D
T
J
T
stg
T
L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Pulsed Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ T
C
= 25 C
@ T
C
= 25
o
C
@ T
C
= 25
o
C
@ T
C
= 25
o
C
@ T
C
= 100
o
C
o
Ratings
330
±
30
90
220
330
223
89
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
W
W
o
C
o
C
o
C
Thermal Characteristics
Symbol
R
θJC
(IGBT)
R
θJC
(Diode)
R
θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
-
-
-
Max.
0.56
1.16
40
Units
o
o
o
C/W
C/W
C/W
Notes:
(1) Repetitive test , Pulse width=100usec , Duty=0.1
(2) Half sine wave , D<0.01, Pulse width<5usec
*I
C
pluse limited by max Tj
©2011 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGA90N33ATD Rev. C0
FGA90N33ATD 330V, 90A PDP Trench IGBT
Package Marking and Ordering Information
Device Marking
FGA90N33ATD
Device
FGA90N33ATDTU
Package
TO-3P
Packaging
Type
Tube
Max Qty
Qty per Tube
30ea
per Box
-
Electrical Characteristics of the IGBT
Symbol
Off Characteristics
BV
CES
I
CES
I
GES
T
C
= 25°C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector to Emitter Breakdown Voltage V
GE
= 0V, I
C
= 400μA
Collector Cut-Off Current
G-E Leakage Current
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
330
-
-
-
-
-
-
400
±400
V
μA
nA
On Characteristics
V
GE(th)
G-E Threshold Voltage
I
C
= 250μA, V
CE
= V
GE
I
C
= 20A
,
V
GE
= 15V
V
CE(sat)
Collector to Emitter Saturation Voltage
I
C
= 45A
,
V
GE
= 15V,
I
C
= 90A
,
V
GE
= 15V,
I
C
= 90A
,
V
GE
= 15V,
T
C
= 125
o
C
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
-
-
-
2200
135
100
-
-
-
pF
pF
pF
2.5
-
-
-
-
4.0
1.1
1.3
1.6
1.7
5.5
1.4
-
-
-
V
V
V
V
V
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
ge
Q
gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
V
CE
= 200V, I
C
= 20A,
V
GE
= 15V
V
CC
= 200V, I
C
= 20A,
R
G
= 5Ω, V
GE
= 15V,
Resistive Load, T
C
= 125
o
C
V
CC
= 200V, I
C
= 20A,
R
G
= 5Ω, V
GE
= 15V,
Resistive Load, T
C
= 25
o
C
-
-
-
-
-
-
-
-
-
-
-
23
40
100
180
20
40
110
250
95
12
40
-
-
-
240
-
-
-
300
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
FGA90N33ATD Rev. C0
2
www.fairchildsemi.com
FGA90N33ATD 330V, 90A PDP Trench IGBT
Electrical Characteristics of the Diode
Symbol
V
FM
t
rr
I
rr
Q
rr
T
C
= 25°C unless otherwise noted
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
I
F
= 10A
Test Conditions
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125 C
I
F
=10A, dI/dt = 200A/μs
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
o
Min.
-
-
-
-
-
-
-
-
Typ.
1.1
0.96
23
36
2.8
5.1
32
91
Max
1.5
-
-
-
-
-
-
-
Units
V
ns
A
nC
FGA90N33ATD Rev. C0
3
www.fairchildsemi.com
FGA90N33ATD 330V, 90A PDP Trench IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
160
T
C
= 25 C
o
Figure 2. Typical Output Characteristics
160
T
C
= 125 C
o
20V
15V
10V
9V
20V
15V
12V
10V
9V
8V
Collector Current, I
C
[A]
12V
8V
Collector Current, I
C
[A]
120
120
80
7V
80
7V
40
40
V
GE
= 6V
V
GE
= 6V
0
0
1
2
3
4
Collector-Emitter Voltage, V
CE
[V]
5
0
0
1
2
3
4
Collector-Emitter Voltage, V
CE
[V]
5
Figure 3. Typical Saturation Voltage
Characteristics
160
Common Emitter
V
GE
= 15V
Figure 4. Transfer Characteristics
160
Common Emitter
V
CE
= 20V
o
Collector Current, I
C
[A]
120
Collector Current, I
C
[A]
T
C
= 25 C
T
C
= 125 C
o
o
120
T = 125
o
C
C
T
C
= 25 C
80
80
40
40
0
0
1
2
3
Collector-Emitter Voltage, V
CE
[V]
4
0
0
2
4
6
8
10
Gate-Emitter Voltage,V
GE
[V]
12
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
2.0
Collector-Emitter Voltage, V
CE
[V]
Common Emitter
V
GE
= 15V
90A
Figure 6. Saturation Voltage vs. V
GE
20
Collector-Emitter Voltage
,
V
CE
[V]
Common Emitter
T
C
= 25 C
o
1.8
1.6
1.4
1.2
1.0
0.8
25
40A
16
12
8
40A
I
C
= 20A
90A
I
C
= 20A
4
50
75
100
125
o
Collector-EmitterCase Temperature, T
C
[
C
]
0
0
4
8
12
16
Gate-Emitter Voltage, V
GE
[V]
20
FGA90N33ATD Rev. C0
4
www.fairchildsemi.com
FGA90N33ATD 330V, 90A PDP Trench IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
GE
20
Collector-Emitter Voltage, V
CE
[
V
]
Common Emitter
T
C
= 125 C
o
Figure 8. Capacitance Characteristics
4000
Common Emitter
V
GE
= 0V, f = 1MHz
16
Capacitance [pF]
3000
C
ies
T
C
= 25 C
o
12
2000
8
40A
C
oes
C
res
4
90A
I
C
= 20A
1000
0
0
4
8
12
16
Gate-Emitter Voltage, V
GE
[V]
20
0
0.1
1
10
Collector-Emitter Voltage, V
CE
[V]
30
Figure 9. Gate charge Characteristics
15
Common Emitter
Figure 10. SOA Characteristics
500
10
μ
s
100
μ
s
Gate-Emitter Voltage, V
GE
[V]
T
C
= 25 C
o
100
Collector Current, I
c
[A]
1ms
12
10
9
V
CC
= 100V
200V
10 ms
DC
6
1
*Notes:
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
3
0.1
0
0.01
0
20
40
60
Gate Charge, Q
g
[nC]
80
100
1
10
100
Collector-Emitter Voltage, V
CE
[V]
500
Figure 11. Turn-on Characteristics vs.
Gate Resistance
200
Figure 12. Turn-off Characteristics vs.
Gate Resistance
5500
Common Emitter
V
CC
= 200V, V
GE
= 15V
I
C
= 20A
o
T
C
= 25 C
o
T
C
= 125 C
100
Switching Time [ns]
Switching Time [ns]
t
r
1000
t
d(off)
t
d(on)
Common Emitter
V
CC
= 200V, V
GE
= 15V
I
C
= 20A
T
C
= 25 C
T
C
= 125 C
o
o
t
f
100
10
0
20
40
60
80
Gate Resistance, R
G
[
Ω
]
100
10
0
20
40
60
80
Gate Resistance, R
G
[
Ω
]
100
FGA90N33ATD Rev. C0
5
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