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SMCG75HE3/9AT

产品描述TVS DIODE 75V 134V DO215AB
产品类别分立半导体    二极管   
文件大小93KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
下载文档 详细参数 全文预览

SMCG75HE3/9AT概述

TVS DIODE 75V 134V DO215AB

SMCG75HE3/9AT规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Vishay(威世)
Reach Compliance Codeunknown
ECCN代码EAR99
击穿电压标称值92.65 V
最大钳位电压134 V
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
极性UNIDIRECTIONAL
最大重复峰值反向电压75 V
表面贴装YES

文档预览

下载PDF文档
SMCG5.0A thru SMCG188CA
www.vishay.com
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Available in uni-directional and bi-directional
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
SMCG (DO-215AB)
PRIMARY CHARACTERISTICS
V
BR
uni-directional
V
BR
bi-directional
V
WM
P
PPM
P
D
I
FSM
(uni-directional only)
T
J
max.
Polarity
Package
6.40 V to 231 V
6.40 V to 231 V
5.0 V to 188 V
1500 W
6.5 W
200 A
150 °C
Uni-directional, bi-directional
SMCG (DO-215AB)
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
MECHANICAL DATA
Case:
SMCG (DO-215AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, industrial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
for uni-directional types the band denotes cathode
end, no marking on bi-directional types
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g. SMCG188CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform
(1)(2)
Peak pulse current with a 10/1000 μs waveform
(1)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
(2)
Power dissipation on infinite heatsink, T
A
= 50 °C
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads to each terminal
SYMBOL
P
PPM
I
PPM
I
FSM
P
D
T
J
, T
STG
VALUE
1500
See next table
200
6.5
-55 to +150
UNIT
W
A
A
W
°C
Revision: 16-Jan-18
Document Number: 88457
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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