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SMA5J10C-E3/5A

产品描述TVS DIODE 10V 18.8V DO214AC
产品类别电路保护   
文件大小84KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
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SMA5J10C-E3/5A概述

TVS DIODE 10V 18.8V DO214AC

SMA5J10C-E3/5A规格参数

参数名称属性值
类型齐纳
双向通道1
电压 - 反向关态(典型值)10V
电压 - 击穿(最小值)11.1V
电压 - 箝位(最大值)@ Ipp18.8V
电流 - 峰值脉冲(10/1000µs)26.6A
功率 - 峰值脉冲500W
电源线路保护
应用通用
工作温度-55°C ~ 150°C(TJ)
安装类型表面贴装
封装/外壳DO-214AC,SMA
供应商器件封装DO-214AC(SMA)

文档预览

下载PDF文档
SMA5J5.0A thru SMA5J40CA
www.vishay.com
Vishay General Semiconductor
High Power Density Surface Mount T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Available in uni-directional and bi-directional
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DO-214AC (SMA)
PRIMARY CHARACTERISTICS
V
BR
V
WM
P
PPM
I
FSM
(uni-directional only)
T
J
max.
Polarity
Package
6.4 V to 49.1 V
5.0 V to 40 V
500 W
40 A
150 °C
Uni-directional, bi-directional
DO-214AC (SMBA)
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
For uni-directional types the band denotes
cathode end, no marking on bi-directional types
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g. SMA5J40CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform
(1)(2)
(fig. 1)
Peak pulse current with a 10/1000 μs waveform
(1)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
(2)
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2.
A
(2)
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
SYMBOL
P
PPM
I
PPM
I
FSM
T
J
, T
STG
VALUE
500
See next table
40
- 55 to + 150
UNIT
W
A
A
°C
Revision: 24-Oct-12
Document Number: 88875
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

 
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