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BYV26DGPHE3/73

产品描述DIODE GEN PURP 800V 1A DO204AC
产品类别分立半导体    二极管   
文件大小530KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
下载文档 详细参数 全文预览

BYV26DGPHE3/73概述

DIODE GEN PURP 800V 1A DO204AC

BYV26DGPHE3/73规格参数

参数名称属性值
是否无铅不含铅
厂商名称Vishay(威世)
零件包装代码DO-15
包装说明O-PALF-W2
针数2
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性FREE WHEELING DIODE, HIGH RELIABILITY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.3 V
JEDEC-95代码DO-204AC
JESD-30 代码O-PALF-W2
JESD-609代码e3
最大非重复峰值正向电流30 A
元件数量1
端子数量2
最高工作温度175 °C
最低工作温度-65 °C
最大输出电流1 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
最大重复峰值反向电压800 V
最大反向恢复时间0.075 µs
表面贴装NO
端子面层MATTE TIN
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

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BYV26DGP, BYV26EGP
www.vishay.com
Vishay General Semiconductor
Glass Passivated Ultrafast Plastic Rectifier
FEATURES
• Superectifier structure for high reliability condition
SUPERECTIFIER
®
• Cavity-free glass passivated pellet chip junction
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low switching losses, high efficiency
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
DO-204AC (DO-15)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
at I
F
T
J
max.
Package
Diode variation
1.0 A
800 V, 1000 V
30 A
75 ns
1.3 V
175 °C
DO-204AC (DO-15)
Single die
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer and telecommunication.
MECHANICAL DATA
Case:
DO-204AC, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 0.375" (9.5 mm)
lead length (fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Non repetitive peak reverse energy
Operating junction and storage temperature range
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
E
RSM (1)
T
J
, T
STG
BYV26DGP
800
560
800
1.0
30
10
-65 to +175
BYV26EGP
1000
700
1000
UNIT
V
V
V
A
A
mJ
°C
Note
(1)
Peak reverse energy measured at I = 400 mA, T = T max. on inductive load, t = 20 μs
R
J
J
Revision: 13-Jun-16
Document Number: 88554
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

 
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