PTFA191001E
PTFA191001F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
100 W, 1930 – 1990 MHz
Description
The PTFA191001E and PTFA191001F are thermally-enhanced,
100-watt, internally-matched LDMOS FETs intended for WCDMA,
IS-95 and CDMA2000 applications. They are characterized for single-
and two-carrier WCDMA operation from 1930 to 1990 MHz.
Thermally-enhanced packaging provides the coolest operation
available.
PTFA191001E
Package H-36248-2
PTFA191001F
Package H-37248-2
Two-carrier WCDMA Drive-up
V
DD
= 30 V, I
DQ
= 900 mA, ƒ = 1960 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing
-23
35
Features
•
•
•
Drain Efficiency (%)
Thermally-enhanced packages,
Pb-free and
RoHS-compliant
Broadband internal matching
Typical two-carrier WCDMA performance at 1960
MHz, 30 V
- Average output power = 25 W
- Linear Gain = 17.0 dB
- Efficiency = 27.5%
- Intermodulation distortion = –37 dBc
- Adjacent channel power = –41.0 dBc
Typical two-carrier IS-95 performance at 1930
MHz, 30 V
- Average output power = 25 W
- Efficiency = 28%
- Intermodulation distortion = –35 dBc @ 1.2288
- Adjacent channel power = –51 dBm
Typical CW performance, 1960 MHz, 30 V
- Output power at P–1dB = 130 W
- Efficiency = 56%
Integrated ESD protection: Human Body Model,
Class
2
(minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 30 V,
100 W (CW) output power
Efficiency
IM3 (dBc), ACPR (dBc)
-28
-33
30
25
IM3
-38
-43
-48
20
15
10
•
ACPR
-53
34
36
38
40
42
44
46
5
Average Output Power (dBm)
•
•
•
•
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
*See Infineon distributor for future availability.
Rev. 04, 2007-10-31
PTFA191001E
PTFA191001F
Confidential, Limited Internal Distribution
RF Characteristics
WCDMA Measurements
(tested in Infineon test fixture)
ƒ
1
= 1955 MHz, ƒ
2
= 1965 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8
dB @ 0.01% CCDF
V
DD
= 30 V, I
DQ
= 900 mA, P
OUT
= 44 dBm average
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
16
26
—
Typ
17.0
28
–37
Max
—
—
–35
Unit
dB
%
dBc
η
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.0
—
Typ
—
—
—
0.08
2.5
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
Ω
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 900 mA
V
GS
= 10 V, V
DS
= 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 100 W CW)
T
STG
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
417
2.38
–40 to +150
0.42
Unit
V
V
°C
W
W/°C
°C
°C/W
*See Infineon distributor for future availability.
Data Sheet
2 of 11
Rev. 04, 2007-10-31
PTFA191001E
PTFA191001F
Confidential, Limited Internal Distribution
Ordering Information
Type and Version
PTFA191001E
PTFA191001F
V4
V4
Package Type
H-36248-2
H-37248-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Marking
PTFA191001E
PTFA191001F
Typical Performance
(data taken in a production test fixture)
Broadband Performance
V
DD
= 30 V, I
DQ
= 900 mA, P
OUT
= 44.0 dBm
Two-carrier WCDMA at Selected Biases
V
DD
= 30 V, ƒ = 1960 MHz, 3GPP WCDMA signal,
P/AR = 8 dB, 10 MHz carrier spacing, series show I
DQ
-5
35
-30
Return Loss
Gain (dB), Efficiency (%)
Input Return Loss (dB)
3rd Order IMD (dBc)
30
25
20
-10
-15
-35
-40
-45
-50
800 mA
-55
34
36
38
40
42
44
46
900 mA
1.0 A
1.1 A
Efficiency
-20
-25
15
Gain
-30
-35
2020
10
1900
1920
1940
1960
1980
2000
Frequency (MHz)
Output Power, PEP (dBm)
Data Sheet
3 of 11
Rev. 04, 2007-10-31
PTFA191001E
PTFA191001F
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Power Sweep, CW Conditions
V
DD
= 30 V, I
DQ
= 900 mA, ƒ = 1960 MHz
Single-carrier WCDMA Drive-up
V
DD
= 30 V, I
DQ
= 900 m A, ƒ = 1960 MHz,
3GPP WCDMA s ignal, TM1 w/16 DPCH, 67% clipping,
PAR = 8.5 dB, 3.84 MHz BW
Adjacent Channel Power Ratio (dB)
60
-35
40
18
Drain Efficiency (%)
17
Gain
40
-40
Efficiency
30
16
30
15
-45
20
Efficiency
T
CASE
= 25°C
T
CASE
= 90°C
20
10
0
20
40
60
80
100
120
-50
10
ACPR
-55
33
35
37
39
ACPR Up
ACPR Low
0
41
43
45
14
Output Power (W)
Average Output Power (dBm )
Voltage Sweep
I
DQ
= 900 mA, ƒ = 1960 MHz,
tone spacing = 1 MHz, P
OUT
(PEP) = 50 dBm
-10
55
Intermodulation Distortion Products
vs. Tone Spacing
V
DD
= 30 V I
DQ
= 900 mA, ƒ = 1960 MHz,
P
OUT
= 49.5 dBm PEP
-25
Gain (dB), Drain Efficiency (%)
3rd Order Intermodulation
Distortion (dBc)
-15
-20
-25
-30
-35
-40
-45
23 24
25 26
27 28 29
30 31
32 33
50
Intermodulation Distortion (dBc)
-30
-35
-40
-45
-50
IM3 Up
Efficiency
45
40
35
30
25
20
3rd Order
5th
7th
-55
-60
0
10
20
30
40
Gain
15
10
Supply Voltage (V)
Tone Spacing (MHz)
Data Sheet
4 of 11
Rev. 04, 2007-10-31
Drain Efficiency (%)
50
Gain (dB)
PTFA191001E
PTFA191001F
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
35
IS-95 Two-carrier NCDMA Drive-up
V
DD
= 30 V, I
DQ
= 900 mA,
ƒ
1
= 1962.5 MHz, ƒ
2
= 1960 MHz
-20
1.03
Intermodulation Distortion (dBc)
Normalized Bias Voltage (V)
-25
30
25
20
15
10
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
-30
-35
-40
-45
-50
-55
36.0
Drain Efficiency (%)
Efficiency
0.2 A
0.6 A
1.0 A
1.5 A
3.0 A
4.5 A
6.0 A
7.5 A
9.0 A
IMD Low
5
0
44.0
38.0
40.0
42.0
0
20
40
60
80
100
Average Output Power (dBm)
Case Temperature (°C)
Broadband Circuit Impedance
R
---
>
Z
0
= 50
Ω
D
Z Source
Z Load
S TOW
ARD
GEN
E
RA
TO
G
S
Z Load
2020 MHz
-
W
A VEL
E
N
G
TH
1900 MHz
0.0
0 .1
L
OA
D
-
Frequency
MHz
1900
1930
1960
1990
2020
R
Z Source
Ω
jX
–4.79
–4.54
–4.32
–4.06
–3.81
5.41
5.23
5.05
4.92
4.79
Z Load
Ω
R
2.88
2.81
2.77
2.80
2.73
jX
2.91
3.18
3.39
3.63
3.89
AR
D
S
TOW
Z Source
2020 MHz
1900 MHz
0 .1
Data Sheet
5 of 11
A
--
W
TH
EN
G
V
EL
Rev. 04, 2007-10-31
0 .2
0. 2
0 .1
嵌入式系统
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