Preliminary PTFA181001GL

PTFA181001HL

Confidential, Limited Internal Distribution

Thermally-Enhanced High Power RF LDMOS FETs

100 W, 1805 – 1880 MHz

Description

The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs

designed for EDGE and WCDMA power amplifier applications in the

1805 to 1880 MHz band. Features include input and output matching,

and thermally-enhanced open-cavity packages with copper flanges.

Manufactured with Infineon's advanced LDMOS process, these

devices provide excellent thermal performance and superior

reliability.

PTFA181001GL*

Package PG-63248-2

PTFA181001HL*

Package PG-64248-2

Two-carrier WCDMA Drive-up

V

DD

= 28 V, I

DQ

= 750 mA, ƒ = 1880 MHz, 3GPP WCDMA

signal, PAR = 8 dB, 10 MHz carrier spacing

-30

35

Features

•

Thermally-enhanced, plastic open-cavity

(EPOC™) packages with copper flanges, Pb-free

and RoHS compliant

Broadband internal matching

Typical EDGE performance at 1879.8 MHz, 28 V

- Average output power = 45 W

- Linear Gain = 16.5 dB

- Efficiency = 36%

- EVM RMS = 1.8%

Typical CW performance, 1880 MHz, 28 V

- Output power at P–1dB = 120 W

- Gain 15.5 dB

- Efficiency = 52%

Integrated ESD protection: Human Body Model,

Class 2 (minimum)

Excellent thermal stability

Capable of handling 10:1 VSWR @ 28 V,

100 W (CW) output power

•

Drain Efficiency (%)

IM3 (dBc), ACPR (dBc)

-35

-40

-45

-50

-55

34

36

38

Efficiency

IM3

30

25

20

ACPR

•

15

10

5

•

40

42

44

46

Average Output Power (dBm)

RF Characteristics

EDGE Measurements

(not subject to production test—verified by design/characterization in Infineon test fixture)

V

DD

= 28 V, I

DQ

= 750 mA, P

OUT

= 45 W (AVG), ƒ = 1879.8 MHz

Characteristic

Error Vector Magnitude

Modulation Spectrum @ 400 KHz

Modulation Spectrum @ 600 KHz

Gain

Drain Efficiency

All published data at T

CASE

= 25°C unless otherwise indicated

Symbol

RMS EVM

ACPR

G

ps

Min

—

Typ

1.8

–61

–73

16.5

36

Max

—

Unit

%

dBc

dB

%

η

D

*See Infineon distributor for future availability.

ESD:

Electrostatic discharge sensitive device—observe handling precautions!

Preliminary Data Sheet

1 of 11

Rev. 01, 2008-06-15

Preliminary PTFA181001GL

PTFA181001HL

Confidential, Limited Internal Distribution

RF Characteristics

(cont.)

Two-tone Measurements

(tested in Infineon test fixture)

V

DD

= 28 V, I

DQ

= 750 mA, P

OUT

= 100 W PEP, ƒ = 1850 MHz, tone spacing = 1 MHz

Characteristic

Gain

Drain Efficiency

Intermodulation Distortion

Symbol

G

ps

Min

—

Typ

16.5

41

–30

Max

—

Unit

dB

%

dBc

η

D

IMD

DC Characteristics

Characteristic

Drain-Source Breakdown Voltage

Drain Leakage Current

Conditions

V

GS

= 0 V, I

DS

= 10 mA

V

DS

= 28 V, V

GS

= 0 V

V

DS

= 63 V, V

GS

= 0 V

Symbol

V

(BR)DSS

I

DSS

I

DSS

R

DS(on)

V

GS

I

GSS

Min

65

—

2.0

—

Typ

—

0.085

2.5

—

Max

—

1.0

10.0

—

3.0

1.0

Unit

V

µA

Ω

V

µA

On-State Resistance

Operating Gate Voltage

Gate Leakage Current

V

GS

= 10 V, V

DS

= 0.1 V

V

DS

= 28 V, I

D

= 750 mA

V

GS

= 10 V, V

DS

= 0 V

Maximum Ratings

Parameter

Drain-Source Voltage

Gate-Source Voltage

Junction Temperature

Total Device Dissipation

Above 25°C derate by

Storage Temperature Range

Thermal Resistance (T

CASE

= 70°C, 100 W CW)

T

STG

R

θJC

Symbol

V

DSS

V

GS

T

J

P

D

Value

65

–0.5 to +12

200

TBD

–40 to +150

TBD

Unit

V

°C

W

W/°C

°C

°C/W

Ordering Information

Type and Version

PTFA181001GL* V1

PTFA181001HL* V1

Package Type

PG-63248-2

PG-64248-2

Package Description

Thermally-enhanced, plastic

open-cavity, slotted flange, single-ended

Thermally-enhanced, plastic

open-cavity, earless flange, single-ended

Shipping

Tray

Marking

PTFA181001GL

PTFA181001HL

*See Infineon distributor for future availability.

Preliminary Data Sheet

2 of 11

Rev. 01, 2008-06-15

Preliminary PTFA181001GL

PTFA181001HL

Confidential, Limited Internal Distribution

Typical Performance

(data taken in a production test fixture)

Edge EVM and Modulation Spectrum

vs. Quiescent Current

V

DD

= 28V, ƒ = 1879.8 MHz, P

OUT

= 46.5 dBm

2.4

-10

EDGE Modulation Spectrum Performance

V

DD

= 28 V, I

DQ

= 750 mA, ƒ = 1879.8 MHz

-20

45

Modulation Spectrum (dB)

EVM RMS (average %)

.

2

1.8

1.6

1.4

1.2

1

0.65

-30

-40

-50

-60

-70

-80

-90

-100

37

39

41

43

45

47

49

35

400 kHz

30

25

20

400 KHz

-50

-60

-70

600 kHz

15

10

5

600 KHz

0.70

0.75

0.80

0.85

-80

-90

0.90

Quiescent Current (A)

Output Power (dBm)

EDGE EVM Performance

V

DD

= 28 V, I

DQ

= 750 mA, ƒ = 1879.8 MHz

Intermodulation Distortion vs. Output Power

(as measured in a broadband circuit)

V

DD

= 28 V, I

DQ

= 750 mA, ƒ

1

=1879 MHz, ƒ

2

= 1880 MHz

45

8

-20

-25

EVM RMS (average %)

.

7

6

5

4

3

2

1

0

37

39

41

Efficiency

40

35

30

25

20

Drain Efficiency (%)

-30

3rd Order

IMD (dBc)

-35

-40

-45

-50

-55

-60

-65

37

39

41

43

45

47

49

5th

7th

EVM

15

10

5

43

45

47

49

Output Power (dBm)

Output Power, Avg. (dBm)

Preliminary Data Sheet

3 of 11

Rev. 01, 2008-06-15

Drain Efficiency (%)

2.2

EVM

-20

Modulation Spectrum (dBc)

-30

Efficiency

40

Preliminary PTFA181001GL

PTFA181001HL

Confidential, Limited Internal Distribution

Typical Performance

(cont.)

Broadband CW Performance

(at P-1dB)

V

DD

= 28 V, I

DQ

= 750 m

IM3 vs. Output Power at Selected Biases

V

DD

= 28 V, ƒ

1

= 1879, ƒ

2

= 1880 MHz

-20

-25

19

18

60

Efficiency

Efficiency (%),

Output Power (dBm)

55

50

-30

375 mA

17

IMD (dBc)

-35

-40

-45

-50

-55

-60

Gain (dB)

Output Power

16

15

45

40

35

1883

1125 mA

Gain

750 mA

14

1805

-65

37

39

41

43

45

47

49

1818

1831

1844

1857

1870

Frequency (MHz)

Output Power, Avg. (dBm)

CW Broadband Performance

V

DD

= 28 V, I

DQ

=750 mA, P

OUT

= 47 dBm

Power Sweep

V

DD

= 28 V, ƒ = 1880 MHz

55

40

30

17.0

16.5

I

DQ

= 1125 mA

Gain (dB), Efficiency (%)

50

Gain

Return Loss (dB)

45

40

35

30

25

20

1805

20

10

Power Gain (dB)

16.0

15.5

15.0

I

DQ

= 375 mA

14.5

14.0

36

38

40

42

44

46

48

50

52

I

DQ

= 750 mA

Efficiency

Return Loss

0

-10

-20

-30

1883

1818

1831

1844

1857

1870

Frequency (MHz)

Output Power (dBm)

Preliminary Data Sheet

4 of 11

Rev. 01, 2008-06-15

Preliminary PTFA181001GL

PTFA181001HL

Confidential, Limited Internal Distribution

Typical Performance

(cont.)

Gain & Efficiency vs. Output Power

V

DD

= 28 V, I

DQ

= 750 mA, ƒ = 1880 MHz

Output Power (at 1 dB Compression)

vs. Supply Voltage

I

DQ

= 750 mA, ƒ =1880 MHz

65

55

45

35

25

18

17

52.0

51.5

51.0

50.5

50.0

49.5

24

26

28

30

32

16

15

14

Efficiency

13

12

36

38

40

42

44

46

48

50

52

15

5

Output Power (dBm)

Gain

Gain (dB)

Drain Efficiency (%)

Output Power (dBm)

Supply Voltage (V)

IS-95 CDMA Performance

V

DD

= 28 V, I

DQ

= 750 mA, ƒ = 1880 MHz

T

CASE

= 25°C

T

CASE

= 90°C

40

35

-10

Efficiency

-20

-30

30

25

20

15

10

5

0

33

35

37

39

41

43

45

47

ACPR F

C

+ 1.98 MHz

ACP F

C

– 0.75 MHz

-40

-50

-60

-70

-80

Output Power (dBm), Avg.

Preliminary Data Sheet

Adj. Ch. Power Ratio (dBc)

Drain Efficiency (%)

5 of 11

Rev. 01, 2008-06-16

参数名称	属性值
晶体管类型	LDMOS
频率	1.88GHz
增益	16.5dB
电压 - 测试	28V
额定电流	1µA
电流 - 测试	750mA
功率 - 输出	100W
电压 - 额定	65V
封装/外壳	2-扁平封装，叶片引线
供应商器件封装	PG-63248-2

	PTFA181001GL V1	PTFA181001GL V1 R250	PTFA181001HL V1	PTFA181001HL V1 R250
描述	IC FET RF LDMOS 100W PG-63248-2	IC FET RF LDMOS 100W PG-63248-2	IC FET RF LDMOS 100W PG-64248-2	IC FET RF LDMOS 100W PG-64248-2
晶体管类型	LDMOS	LDMOS	LDMOS	LDMOS
频率	1.88GHz	1.88GHz	1.88GHz	1.88GHz
增益	16.5dB	16.5dB	16.5dB	16.5dB
电压 - 测试	28V	28V	28V	28V
额定电流	1µA	1µA	1µA	1µA
电流 - 测试	750mA	750mA	750mA	750mA
功率 - 输出	100W	100W	100W	100W
电压 - 额定	65V	65V	65V	65V
封装/外壳	2-扁平封装，叶片引线	2-扁平封装，叶片引线	2-扁平封装，叶片引线，带法兰	2-扁平封装，叶片引线，带法兰
供应商器件封装	PG-63248-2	PG-63248-2	PG-64248-2	PG-64248-2

PTFA181001GL V1

PTFA181001GL V1概述

PTFA181001GL V1规格参数

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