PTFA082201E
PTFA082201F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
220 W, 869 – 894 MHz
Description
The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs
designed for CDMA and WCDMA power amplifier applications in
the 869 to 894 MHz band. Features include input and output matching,
and thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these
devices provide excellent thermal performance and superior
reliability.
PTFA082201E
Package H-36260-2
2-Carrier WCDMA Performance
V
DD
= 30 V, I
DQ
= 1950 mA, ƒ = 894 MHz, 3GPP WCDMA
signal, P/A R = 8.1 dB, 10 MHz carrier spacing,
3.84 MHz bandwidth
50
40
30
20
10
0
30
-30
-35
-40
-45
-50
-55
50
ACPR
IMD
IMD (dBc), ACPR (dBc)
Drain Efficiency (%)
in
ue
•
d
•
•
•
nt
Gain
Efficiency
45
sc
o
35
40
Output Power, Avg. (dBm)
RF Characteristics
Two-carrier WCDMA Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 1950 mA, P
OUT
= 55 W average
ƒ
1
= 884 MHz, ƒ
2
= 894 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.1 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
di
pr
od
uc
Features
•
•
•
PTFA082201F
Package H-37260-2
Thermally-enhanced packages,
Pb-free and
RoHS compliant
Broadband internal matching
Typical two-carrier WCDMA performance at
894 MHz, 30 V
- Average output power = 55 W
- Linear Gain = 18.0 dB
- Efficiency = 30%
- Intermodulation distortion = –37 dBc
- Adjacent channel power = –39.5 dBc
Typical CW performance, 894 MHz, 30 V
- Output power at P–1dB = 250 W
- Efficiency = 59%
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR at 30 V,
220 W (CW) output power
Symbol
G
ps
Min
—
—
—
ts
Typ
18.0
30
–37
Max
—
—
—
Unit
dB
%
dBc
η
D
IMD
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
*See Infineon distributor for future availability.
Rev. 05, 2015-01-09
PTFA082201E
PTFA082201F
Confidential, Limited Internal Distribution
RF Characteristics
(cont.)
Two-tone Measurements
(tested in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 1950 mA, P
OUT
= 220 W PEP, ƒ = 894 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
17.5
40
—
Typ
18.0
43
Max
—
—
–29
Unit
dB
%
dBc
η
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
pr
od
uc
Symbol
Min
65
—
—
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
—
2.0
—
ts
—
Typ
—
—
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
Ω
V
µA
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0 V
ue
Operating Gate Voltage
V
DS
= 30 V, I
DQ
= 1950 mA
d
On-State Resistance
V
GS
= 10 V, V
DS
= 0.1 V
0.04
2.5
—
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
nt
in
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
700
4.0
Unit
V
V
°C
W
W/°C
°C
°C/W
Junction Temperature
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 220 W CW)
di
Total Device Dissipation
sc
o
T
STG
R
θJC
–40 to +150
0.25
Ordering Information
Type and Version
PTFA082201E
PTFA082201F
V4
V4
Package Outline
H-36260-2
H-37260-2
Package Description
Thermally-enhanced slotted flange,
single-ended
Shipping
Tray
Tray
Marking
PTFA082201E
PTFA082201F
Thermally-enhanced earless flange,
single-ended
*See Infineon distributor for future availability.
Data Sheet
2 of 10
Rev. 05, 2015-01-09
PTFA082201E
PTFA082201F
Confidential, Limited Internal Distribution
Typical Performance
(data taken in a production test fixture)
2-Carrier WCDMA Performance
V
DD
= 30 V, I
DQ
= 1950 mA, ƒ = 894 MHz, 3GPP WCDMA
signal, P/A R = 8.1 dB, 10 MHz carrier spacing,
3.84 MHz bandwidth
50
-30
-35
Two-carrier WCDMA Power Sweep
V
DD
= 30 V, I
DQ
= 1600 mA, ƒ
1
= 889 MHz, ƒ
2
= 894
0
35
Efficiency (%), Gain (dB)
ts
ACPR
0
10
20
30
40
50
pr
od
uc
-30
-40
-50
-60
50
30
20
10
-40
-45
-50
ACPR (dBc)
Gain
IMD
Efficiency
-20
25
20
15
10
5
ACPR
0
30
35
40
45
50
-55
Output Power (dBm)
Gain & Efficiency vs. Output Power
V
DD
= 30 V, I
DQ
= 1950 mA, ƒ = 894 MHz
in
ue
d
Output Power (dBm)
2-Tone Broadband Performance
V
DD
= 30 V, I
DQ
= 1950 mA, P
OUT
= 110 W
nt
sc
o
22
21
20
70
0
-5
-10
Efficiency (%), Gain (dB)
60
45
40
35
30
25
20
15
850
Drain Efficiency (%)
Gain (dB)
di
19
18
17
16
15
30
Gain
40
30
20
Return Loss
-15
-20
-25
Efficiency
10
0
Gain
865
880
895
35
40
45
50
55
60
-30
910
Output Power (dBm)
Frequency (MHz)
Data Sheet
3 of 10
Rev. 05, 2015-01-09
Return Loss (dB)
50
Efficiency
Drain Efficiency (%)
40
IMD (dBc), ACPR (dBc)
T
CASE
= 25°C
T
CASE
= 90°C
-10
Efficiency
30
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
