PTF141501E
Thermally-Enhanced High Power RF LDMOS FET
150 W, 1450 – 1500 MHz, 1600 – 1700 MHz
Description
The PTF141501E is a 150-watt,
GOLDMOS
®
FET intended for DAB
applications. This device is characterized for Digital Audio Broadcast
operation in the 1450 to 1500 MHz band. Thermally-enhanced packaging
provides the coolest operation available. Full gold metallization ensures
excellent device lifetime and reliability.
PTF141501E
Package H-30260-2
DAB Drive-up at 28 Volts
V
DD
= 28 V, f = 1500 MHz, I
DQ
= 1.5 A, DAB mode 2
Features
•
•
•
Spectral Regrowth (dBc)
Thermally-enhanced package, pB-free and
RoHS-compliant
Broadband internal matching
Typical DAB Mode 2 performance at 1500
MHz, 32 V
- Average output power = 50 W
- Efficiency = 28%
- Spectral regrowth = –30 dBc
-
∆
975 kHz f
C
Typical DAB Mode 2 performance at 1500
MHz, 28 V
- Average output power = 40 W
- Efficiency = 26%
- Spectral regrowth = –31 dBc
-
∆
975 kHz f
C
Typical CW performance, 1500 MHz, 28 V
- Minimum output power = 150 W
- Linear gain = 16.5 dB
- Efficiency = 48% at P–1dB
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR at 28 V, 150
W (CW) output power
35
30
-20
-25
Drain Efficiency (%)
25
20
15
10
5
0
0
10
20
30
40
Regrowth
Efficiency
-30
-35
-40
-45
-50
-55
•
50
60
•
Output Power (W) Average
•
•
•
RF Characteristics
DAB Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 32 V, I
DQ
= 1.5 A, P
OUT
= 50 W
AVG
, f = 1500 MHz, DAB Mode 2, f
C
∆
975 kHz
Characteristic
Spectral Regrowth
Gain
Drain Efficiency
All published data at T
CASE
= 25°C unless otherwise indicated
Symbol
RGTH
G
ps
Min
—
—
—
Typ
–30
16.5
29
Max
—
—
—
Unit
dBc
dB
%
η
D
*See Infineon distributor for future availability.
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 12
Rev. 04, 2008-02-13
PTF141501E
RF Characteristics
(cont.)
Two-Tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 1.5 A, P
OUT
= 150 W
PEP
, f = 1500 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
15.0
35
—
Typ
16.5
—
–30
Max
—
—
–28
Unit
dB
%
dBc
η
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V
GS
= 0 V, I
D
= 10 µA
V
DS
= 28 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 1.5 A
V
GS
= +10 V, V
DS
= 0 V
Symbol
V
(BR)DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
2.5
—
Typ
—
—
0.07
3.3
—
Max
—
1.0
—
4.0
1.0
Unit
V
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C)
T
STG
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
438
2.5
–40 to +150
0.4
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type
PTF141501E
Package Outline
H-30260-2
Package Description
Thermally-enhanced slotted flange, single-ended
Marking
PTF141501E
*See Infineon distributor for future availability.
Data Sheet
2 of 12
Rev. 04, 2008-02-13
PTF141501E
Typical Performance
CW Sweep in a Broadband Test Fixture
V
DD
= 28 V, I
DQ
= 1.5 A, P
OUT
(CW) = 30 W
DAB Drive-up at 32 Volts
V
DD
= 32, I
DQ
= 1.5 A, f = 1500 MHz, DAB Mode 2
Gain (dB) and Drain Efficiency (%)
.
35
30
-20
30
25
20
15
10
5
0
1400
0
Spectral Regrowth (dBc)
-25
-30
Drain Efficiency (%)
.
25
20
15
10
5
0
0
10
20
30
40
50
60
-10
-15
-20
-25
-30
1600
Efficiency
Regrowth
-35
-40
-45
-50
-55
Gain
Return Loss
1450
1500
1550
Output Power (W) Average
Frequency (MHZ)
CW Sweep
for Varying Bias Conditions
V
DD
= 28 V, f = 1500 MHz
17
Intermodulation Distortion Products
vs. Output Power
V
DD
= 28, I
DQ
= 1.5 A, f = 1.5 GHz, tone spacing = 1 MHz
-25
45
Intermodulation Distortion (dBc)
-30
-35
-40
-45
-50
-55
IM3
35
Gain (dB)
16
I
DQ
= 1.2 A
I
DQ
= 0.9 A
Drain Efficiency
IM5
25
15
I
DQ
= 0.6 A
15
IM7
-60
-65
0
20
40
60
80
5
100
14
1
10
100
1000
Output Power (W) CW
Output Power (W) Average
Data Sheet
3 of 12
Rev. 04, 2008-02-13
Drain Efficiency (%)
.
I
DQ
= 1.5 A
Input Return Loss (dB)
Drain Efficiency
-5
PTF141501E
Reference Circuit for 1500 MHz
C1
0.001µF
R2
1.3K
V
R1
1.2K
V
QQ1
LM7805
V
DD
Q1
Q1
BCP56
C2
0.001µF
R3
2K
V
C3
0.001µF
R4
2K
V
R5
5.1K
V
C4
10µF
35V
R6
10
V
C5
0.1µF
R7
5.1K
V
C6
7.5pF
C10
13pF
C11
1µF
L1
C12
0.1µF
C13
10µF
35V
V
DD
l
6
C7
33pF
DUT
l
7
C19
33pF
RF_IN
l
1
l
2
l
3
C8
0.3pF
l
4
C9
2.4pF
l
5
l
9
l
10
C18
0.7pF
l
11
l
12
l
13
l
14
C20
0.3pF
RF_OUT
l
8
L2
C14
13pF
C15
1µF
C16
0.1µF
C17
10µF
35V
141501a-1500_sch
Reference Circuit Schematic for 1500 MHz
Circuit Assembly Information
DUT
PTF141501E
PCB
0.76 mm [0.030"] thick,
ε
r
= 4.5
Microstrip
l
1
l
2
l
3
l
4
l
5
l
6
l
7
l
8
l
9
l
10
l
11
l
12
l
13
l
14
LDMOS Transistor
TMM4
2 oz. copper, both sides
Dimensions: L x W (in.)
0.185 x 0.058
0.500 x 0.073
0.062 x 0.073
0.048 x 0.298
0.200 x 0.598
0.794 x 0.038
1.238 x 0.035
1.238 x 0.035
0.097 x 1.098
0.324 x 1.098
0.235 x 0.497
0.045 x 0.058
0.240 x 0.058
0.042 x 0.058
Electrical Characteristics at 1500 MHz
1
Dimensions: L x W (mm)
0.043
λ,
50.0
Ω
4.67 x 1.47
0.118
λ,
42.0
Ω
12.70 x 1.85
0.015
λ,
42.0
Ω
1.57 x 1.85
0.012
λ,
14.7
Ω
1.22 x 7.57
0.052
λ,
8.0
Ω
5.08 x 15.19
0.182
λ,
60.0
Ω
20.17 x 0.97
0.283
λ,
63.0
Ω
31.45 x 0.89
0.283
λ,
63.0
Ω
31.45 x 0.89
0.026
λ,
4.6
Ω
2.46 x 27.89
0.086
λ,
4.6
Ω
8.23 x 27.89
0.061
λ,
9.4
Ω
5.97 x 12.62
0.011
λ,
50.0
Ω
1.14 x 1.47
0.056
λ,
50.0
Ω
6.10 x 1.47
0.010
λ,
50.0
Ω
1.07 x 1.47
1
Electrical Characteristics are rounded.
Data Sheet
5 of 12
Rev. 04, 2008-02-13
ADI 工业技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
