VS-GT50TP120N
www.vishay.com
Vishay Semiconductors
Molding Type Module IGBT,
2 in 1 Package, 1200 V, 50 A
FEATURES
• Low V
CE(on)
trench IGBT technology
• Low switching losses
• 10 μs short circuit capability
• V
CE(on)
with positive temperature coefficient
• Maximum junction temperature 175 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
INT-A-PAK
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
V
CES
I
C
at T
C
= 80 °C
V
CE(on)
(typical)
at I
C
= 50 A, 25 °C
Speed
Package
Circuit configuration
1200 V
50 A
1.65 V
8 kHz to 30 kHz
INT-A-PAK
Half bridge
TYPICAL APPLICATIONS
• UPS (Uninterruptable Power Supply)
• Electronic welders
• Switching mode power supplies
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as UPS and SMPS.
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Collector to emitter voltage
Gate to emitter voltage
Collector current
Pulsed collector current
Diode continuous forward current
Diode maximum forward current
Maximum power dissipation
RMS isolation voltage
SYMBOL
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
(1)
TEST CONDITIONS
MAX.
1200
± 20
UNITS
V
T
C
= 25 °C
T
C
= 80 °C
t
p
= 1 ms
100
50
100
50
100
A
P
D
V
ISOL
T
J
= 175 °C
f = 50 Hz, t = 1 min
405
2500
W
V
Note
(1)
Repetitive rating: pulse width limited by maximum junction temperature
IGBT ELECTRICAL SPECIFICATIONS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate to emitter threshold voltage
Collector cut-off current
Gate to emitter leakage current
SYMBOL
V
(BR)CES
V
CE(on)
V
GE(th)
I
CES
I
GES
TEST CONDITIONS
T
J
= 25 °C
V
GE
= 15 V, I
C
= 50 A, T
J
= 25 °C
V
GE
= 15 V, I
C
= 50 A, T
J
= 175 °C
V
CE
= V
GE
, I
C
= 1.4 mA, T
J
= 25 °C
V
CE
= V
CES
, V
GE
= 0 V, T
J
= 25 °C
V
GE
= V
GES
, V
CE
= 0 V, T
J
= 25 °C
MIN.
1200
-
-
5.0
-
-
TYP.
-
1.90
2.50
5.5
-
-
MAX.
-
2.35
-
7.5
5.0
400
mA
nA
V
UNITS
Revision: 18-Sep-17
Document Number: 94824
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GT50TP120N
www.vishay.com
Vishay Semiconductors
SYMBOL
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oes
C
res
I
SC
L
CE
R
CC’+EE’
t
p
10 μs, V
GE
= 15 V, T
J
= 125 °C,
V
CC
= 600 V, V
CEM
1200 V
V
GE
= 0 V, V
CE
= 30 V, f = 1.0 MHz
V
CC
= 600 V, I
C
= 50 A, R
g
= 15
,
V
GE
= ± 15 V, T
J
= 125 °C
V
CC
= 600 V, I
C
= 50 A, R
g
= 15
,
V
GE
= ± 15 V, T
J
= 25 °C
TEST CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
148
84
245
251
5.51
2.70
263
81
256
292
6.63
3.25
6.24
0.23
0.15
450
-
0.75
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
30
-
A
nH
m
nF
mJ
ns
mJ
ns
UNITS
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
SC data
Stray inductance
Module lead resistance, terminal to chip
DIODE ELECTRICAL SPECIFICATIONS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Forward voltage
Reverse recovery charge
Peak reverse recovery current
Reverse recovery energy
SYMBOL
V
F
Q
rr
I
rr
E
rec
I
F
= 50 A, V
R
= 600 V,
dI
F
/dt = -654 A/μs
V
GE
= -15 V
TEST CONDITIONS
I
F
= 50 A
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
MIN.
-
-
-
-
-
-
-
-
TYP.
1.85
1.95
3.1
6.1
24
31
0.98
2.06
MAX.
2.25
-
-
-
-
-
-
-
UNITS
V
μC
A
mJ
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Operating junction temperature
Storage temperature range
Junction to case
IGBT
Diode
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
Power terminal screw: M5
Mounting screw: M6
Weight of module
-
TEST CONDITIONS
MIN.
-
-40
-
-
-
TYP.
-
-
-
-
0.05
2.5 to 5.0
3.0 to 5.0
150
-
MAX.
175
125
0.37
0.49
-
Nm
g
K/W
UNITS
°C
°C
Case to sink (conductive grease applied)
Mounting torque
Weight
Revision: 18-Sep-17
Document Number: 94824
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GT50TP120N
www.vishay.com
Vishay Semiconductors
20
V
CC
= 600 V
R
g
=15
Ω
V
GE
= ± 15 V
T
J
=
125 °C
E
on
100
90
80
70
25 °C
V
GE
= 15 V
18
16
14
12
I
C
(A)
60
50
40
30
20
10
0
0
1
E (mJ)
10
8
6
4
2
0
E
off
175 °C
2
3
4
0
25
50
75
100
V
CE
(V)
Fig. 1 - IGBT Typical Output Characteristics
I
C
(A)
Fig. 3 - IGBT Switching Loss vs. I
C
100
90
80
70
V
CE
= 50 V
20
18
16
14
175 °C
12
V
CC
= 600 V
I
C
= 50 A
V
GE
= ± 15 V
T
J
=
125 °C
E
on
I
C
(A)
60
50
40
30
20
10
0
0
2
4
6
E (mJ)
25 °C
10
8
6
4
2
0
E
off
8
10
12
0
10
20
30
40
50
60
V
GE
(V)
Fig. 2 - IGBT Transfer Characteristics
R
g
(Ω)
Fig. 4 - IGBT Switching Loss vs. R
G
120
Chip
100
Module
80
I
C
(A)
60
40
20
0
0
350
700
1050
1400
R
g
= 15
Ω
V
GE
= ± 15 V
T
J
=
125 °C
V
CE
(V)
Fig. 5 - RBSOA
Revision: 18-Sep-17
Document Number: 94824
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GT50TP120N
www.vishay.com
Vishay Semiconductors
10
0
IGBT
Z
thJC
(K/W)
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
-0
10
1
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
100
90
80
70
25 °C
3.5
3
2.5
V
CC
= 600 V
R
g
= 15
Ω
V
GE
= - 15 V
T
J
=
125 °C
E
rec
E (mJ)
60
125 °C
I
F
(A)
2
1.5
1
0.5
0
50
40
30
20
10
0
0
1
2
3
0
25
50
75
100
V
F
(V)
Fig. 7 - Diode Forward Characteristics
I
F
(A)
Fig. 8 - Diode Switching Loss vs. I
F
3
2.5
2
E
rec
E (mJ)
1.5
1
0.5
0
0
10
20
30
40
50
60
V
CC
= 600 V
I
F
= 50 A
V
GE
= - 15 V
T
J
=
125 °C
R
g
(Ω)
Fig. 9 - Diode Switching Loss vs. R
G
Revision: 18-Sep-17
Document Number: 94824
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GT50TP120N
www.vishay.com
Vishay Semiconductors
10
0
Diode
Z
thJC
(K/W)
10
-1
10
-2
10
-3
10
-2
10
-1
10
0
10
1
t (s)
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
6
7
1
2
3
5
4
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95524
Revision: 18-Sep-17
Document Number: 94824
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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