NSCT3904LT1G
General Purpose Transistors
NPN Silicon
Features
•
These are Pb−Free Devices
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
40
60
6.0
200
Unit
Vdc
Vdc
Vdc
mAdc
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) @T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2)
@T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
225
1.8
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
417
−55 to +150
mW
mW/°C
°C/W
°C
1
394
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
556
mW
mW/°C
°C/W
1
2
Max
Unit
3
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
394 M
G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
NSCT3904LT1G
Package
SOT−23
(Pb−Free)
Shipping
†
3000 Tape & Reel
NSCT3904LT3G
SOT−23 10,000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2006
1
May, 2006 − Rev. 0
Publication Order Number:
NSCT3904LT1/D
NSCT3904LT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (I
C
= 1.0 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage (I
C
= 10
mAdc,
I
E
= 0)
Emitter −Base Breakdown Voltage (I
E
= 10
mAdc,
I
C
= 0)
Base Cutoff Current (V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
Collector Cutoff Current (V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
ON CHARACTERISTICS
(Note 3)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
Collector −Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
Base −Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance (V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Input Impedance (V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio (V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
Small −Signal Current Gain (V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
Output Admittance (V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
Noise Figure (V
CE
= 5.0 Vdc, I
C
= 100
mAdc,
R
S
= 1.0 k ohms, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V
CC
= 3.0 Vdc, V
BE
= − 0.5 Vdc,
I
C
= 10 mAdc, I
B1
= 1.0 mAdc)
(V
CC
= 3.0 Vdc,
I
C
= 10 mAdc, I
B1
= I
B2
= 1.0 mAdc)
t
d
t
r
t
s
t
f
−
−
−
−
35
35
200
ns
50
ns
f
T
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
NF
300
−
−
1.0
0.5
100
1.0
−
−
4.0
8.0
10
8.0
400
40
5.0
MHz
pF
pF
kW
X 10
− 4
−
mmhos
dB
H
FE
40
70
100
60
30
V
CE(sat)
−
−
V
BE(sat)
0.65
−
0.85
0.95
0.2
0.3
Vdc
−
−
300
−
−
Vdc
−
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
40
60
6.0
−
−
−
−
−
50
50
Vdc
Vdc
Vdc
nAdc
nAdc
Symbol
Min
Max
Unit
3. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
DUTY CYCLE = 2%
300 ns
+3 V
+10.9 V
10 k
275
10 < t
1
< 500
ms
DUTY CYCLE = 2%
t
1
+3 V
+10.9 V
275
10 k
1N916
C
S
< 4 pF*
−0.5 V
< 1 ns
0
C
S
< 4 pF*
−9.1 V′
* Total shunt capacitance of test jig and connectors
< 1 ns
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
http://onsemi.com
2
NSCT3904LT1G
TYPICAL TRANSIENT CHARACTERISTICS
T
J
= 25°C
T
J
= 125°C
10
7.0
CAPACITANCE (pF)
Q, CHARGE (pC)
5.0
C
ibo
3.0
2.0
C
obo
5000
3000
2000
1000
700
500
300
200
100
70
50
Q
T
Q
A
V
CC
= 40 V
I
C
/I
B
= 10
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure 3. Capacitance
500
300
200
100
70
50
30
20
10
7
5
t
d
@ V
OB
= 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
I
C
, COLLECTOR CURRENT (mA)
40 V
15 V
2.0 V
50 70 100
200
I
C
/I
B
= 10
500
300
200
t r, RISE TIME (ns)
100
70
50
30
20
10
7
5
Figure 4. Charge Data
V
CC
= 40 V
I
C
/I
B
= 10
TIME (ns)
t
r
@ V
CC
= 3.0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Turn −On Time
500
300
200
t s, STORAGE TIME (ns)
′
100
70
50
30
20
10
7
5
50 70 100
200
I
C
/I
B
= 20
I
C
/I
B
= 10
I
C
/I
B
= 20
I
C
/I
B
= 10
500
300
200
t f , FALL TIME (ns)
Figure 6. Rise Time
t′
s
= t
s
−
1
/
8
t
f
I
B1
= I
B2
V
CC
= 40 V
I
B1
= I
B2
I
C
/I
B
= 20
100
70
50
30
20
10
7
5
50 70 100
200
I
C
/I
B
= 10
1.0
2.0 3.0
5.0 7.0 10
20
30
1.0
2.0 3.0
5.0 7.0 10
20
30
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Figure 8. Fall Time
http://onsemi.com
3
NSCT3904LT1G
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
= 5.0 Vdc, T
A
= 25°C, Bandwidth = 1.0 Hz)
12
10
NF, NOISE FIGURE (dB)
8
6
4
2
0
0.1
SOURCE RESISTANCE = 500
W
I
C
= 100
mA
0.2
0.4
1.0
2.0
4.0
10
20
40
100
SOURCE RESISTANCE = 200
W
I
C
= 1.0 mA
NF, NOISE FIGURE (dB)
SOURCE RESISTANCE = 200
W
I
C
= 0.5 mA
SOURCE RESISTANCE = 1.0 k
I
C
= 50
mA
14
f = 1.0 kHz
12
10
8
6
4
2
0
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
100
I
C
= 100
mA
I
C
= 1.0 mA
I
C
= 0.5 mA
I
C
= 50
mA
f, FREQUENCY (kHz)
R
S
, SOURCE RESISTANCE (k OHMS)
Figure 9.
Figure 10.
h PARAMETERS
(V
CE
= 10 Vdc, f = 1.0 kHz, T
A
= 25°C)
300
hoe , OUTPUT ADMITTANCE (
m
mhos)
5.0
10
100
50
20
10
5
2
1
0.1
0.2
0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0
10
h fe , CURRENT GAIN
200
100
70
50
30
0.1
0.2
0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Current Gain
20
h ie , INPUT IMPEDANCE (k OHMS)
10
5.0
10
7.0
5.0
3.0
2.0
Figure 12. Output Admittance
2.0
1.0
0.5
0.2
h re , VOLTAGE FEEDBACK RATIO (X 10
−4
)
1.0
0.7
0.5
0.1
0.2
0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0
10
0.1
0.2
0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0
10
Figure 13. Input Impedance
http://onsemi.com
4
Figure 14. Voltage Feedback Ratio
NSCT3904LT1G
TYPICAL STATIC CHARACTERISTICS
h FE , DC CURRENT GAIN (NORMALIZED)
2.0
T
J
= +125°C
+25°C
V
CE
= 1.0 V
1.0
0.7
0.5
0.3
0.2
−55
°C
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
I
C
, COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
VCE , COLLECTOR EMITTER VOLTAGE (VOLTS)
1.0
T
J
= 25°C
0.8
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I
B
, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
1.2
T
J
= 25°C
1.0
V, VOLTAGE (VOLTS)
0.8
V
BE
@ V
CE
=1.0 V
0.6
0.4
V
CE(sat)
@ I
C
/I
B
=10
0.2
0
V
BE(sat)
@ I
C
/I
B
=10
COEFFICIENT (mV/
°
C)
1.0
0.5
q
VC
FOR V
CE(sat)
0
−0.5
−55
°C
TO +25°C
−1.0
+25°C TO +125°C
−1.5
−2.0
q
VB
FOR V
BE(sat)
−55
°C
TO +25°C
+25°C TO +125°C
1.0
2.0
5.0
10
20
50
100
200
0
20
40
60
80
100
120
140
160
180 200
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 17. “ON” Voltages
Figure 18. Temperature Coefficients
http://onsemi.com
5
Microchip MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
