Freescale Semiconductor
Technical Data
Document Number: Order from RF Marketing
Rev. 4, 12/2006
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for pulsed wideband large - signal output and driver
applications with frequencies up to 450 MHz. Devices are unmatched and are
suitable for use in industrial, medical and scientific applications.
•
Typical CW Performance at 220 MHz: V
DD
= 50 Volts, I
DQ
= 35 mA,
P
out
= 10 Watts
Power Gain — 25 dB
Drain Efficiency — 64%
•
Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 10 Watts CW
Output Power
Features
•
Integrated ESD Protection
•
Excellent Thermal Stability
•
Facilitates Manual Gain Control, ALC and Modulation Techniques
•
225°C Capable Plastic Package
•
RoHS Compliant
MRF6V2010N
MRF6V2010NB
PREPRODUCTION
10 - 450 MHz, 10 W, 50 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1265 - 08, STYLE 1
TO - 270- 2
PLASTIC
MRF6V2010N
CASE 1337 - 03, STYLE 1
TO - 272- 2
PLASTIC
MRF6V2010NB
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
J
Value
- 0.5, +110
- 0.5, +10
- 65 to +150
225
Unit
Vdc
Vdc
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature TBD°C, TBD W CW
Case Temperature TBD°C, TBD W CW
Symbol
R
θJC
Value
(3)
TBD
TBD
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
TBD (Minimum)
TBD (Minimum)
TBD (Minimum)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product. (Calculator available when part is in production.)
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
This document contains information on a preproduction product. Specifications and information herein are subject to change without notice.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF6V2010N MRF6V2010NB
1
RF Device Data
Freescale Semiconductor
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 100 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Drain- Source Breakdown Voltage
(I
D
= 5 mA, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 28
μAdc)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 70 mAdc)
Dynamic Characteristics
Reverse Transfer Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Power Gain
Drain Efficiency
Input Return Loss
C
rss
C
oss
C
iss
—
—
—
0.27
6.6
15
—
—
—
pF
pF
pF
V
GS(th)
V
DS(on)
—
—
2.4
0.3
—
—
Vdc
Vdc
I
DSS
I
DSS
BV
DSS
I
GSS
—
—
110
—
—
—
—
—
2.5
50
—
10
mA
μAdc
Vdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 35 mA, P
out
= 10 W, f = 220 MHz, CW
G
ps
η
D
IRL
—
—
—
25
64
- 20
—
—
—
dB
%
dB
ATTENTION: The MRF6V2010N and MRF6V2010NB are high power devices and special considerations
must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which
exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263
(for bolt down mounting) or AN1907 (for solder reflow mounting)
PRIOR TO STARTING SYSTEM DESIGN
to
ensure proper mounting of these devices.
MRF6V2010N MRF6V2010NB
2
RF Device Data
Freescale Semiconductor
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
