Preliminary
Datasheet
RJK0456DPB
40V, 50A, 3.2m max.
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Low drive current
Low on-resistance
R
DS(on)
= 2.6 m
typ. (at V
GS
= 10 V)
Pb-free
Halogen-free
High density mounting
R07DS1051EJ0300
(Previous: REJ03G1879-0200)
Rev.3.00
Apr 09, 2013
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
D
5
4
G
3
12
4
1, 2, 3
4
5
Source
Gate
Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at L=10uH, Tch = 25C, Rg
50
3. Tc = 25C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP
E
AS Note 2
Pch
Note3
ch-C
Tch
Tstg
Note 2
Ratings
40
20
50
200
50
50
20
65
1.92
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS1051EJ0300 Rev.3.00
Apr 09, 2013
Page 1 of 6
RJK0456DPB
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
40
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
2.6
67
3000
900
260
0.5
39
13
6.0
14
6.8
34
8.0
0.8
41
Max
—
0.1
1
4.0
3.2
—
—
—
—
—
—
—
—
—
—
—
—
1.1
—
Unit
V
A
A
V
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0 V
V
GS
=
20
V, V
DS
= 0 V
V
DS
= 40 V, V
GS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
I
D
= 25 A, V
GS
= 10 V
Note4
I
D
= 25 A, V
DS
= 10 V
Note4
V
DS
= 10 V, V
GS
= 0 V,
f = 1 MHz
V
DD
= 10 V, V
GS
= 10 V,
I
D
= 50 A
V
GS
= 10 V, I
D
= 25 A,
V
DD
10 V, R
L
= 0.4
,
Rg = 4.7
I
F
= 50 A, V
GS
= 0 V
Note4
I
F
= 50 A, V
GS
= 0 V
di
F
/ dt = 100 A/
s
R07DS1051EJ0300 Rev.3.00
Apr 09, 2013
Page 2 of 6
RJK0456DPB
Preliminary
Main Characteristics
Power vs. Temperature Derating
80
1000
Maximum Safe Operation Area
Tc = 25°C
1 shot Pulse
Channel Dissipation Pch (W)
Drain Current I
D
(A)
60
100
1m
10
Operation in
PW = 10 ms
this area is
1 limited by R
DS(on)
s
40
20
DC Operation
0.1
0.1
0
50
100
150
200
1
10
100
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
50
4.4 V
10 V
4.2 V
Pulse Test
4.0 V
50
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
30
3.8 V
Drain Current I
D
(A)
40
40
30
20
3.6 V
10
20
Tc = 75°C
25°C
–25°C
10
V
GS
= 3.4 V
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Drain Current
10
Pulse Test
Drain to Source Saturation Voltage
V
DS (on)
(mV)
150
Pulse Test
120
90
1
60
I
D
= 20 A
10 A
5A
0
4
8
12
16
20
0.1
1
V
GS
= 10 V
30
10
100
1000
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
R07DS1051EJ0300 Rev.3.00
Apr 09, 2013
Page 3 of 6
RJK0456DPB
Static Drain to Source on State Resistance
vs. Temperature
10
8
10000
Pulse Test
I
D
= 25 A
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Capacitance C (pF)
Ciss
1000
Coss
Crss
6
4
V
GS
= 10 V
100
V
GS
= 0 V
f = 1 MHz
2
0
–25
10
0
25
50
75
100 125 150
0
10
20
30
40
Case Temperature Tc (
°
C)
Drain to Source Voltage V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Reverse Drain Current I
DR
(A)
I
D
= 50 A
Gate to Source Voltage V
GS
(V)
50
20
50
Pulse Test
10 V
40
40
V
DD
= 25 V
10 V
V
GS
16
30
V
DS
12
30
20
8
20
V
GS
= 0 V
10
V
DD
= 25 V
10 V
0
10
20
30
40
4
10
0
0
50
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nC)
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
25
I
AP
= 50 A
V
DD
= 15 V
duty < 0.1 %
Rg
≥
50
Ω
Avalanche Energy E
AS
(mJ)
20
15
10
5
0
25
50
75
100
125
150
Channel Temperature Tch (
°C)
R07DS1051EJ0300 Rev.3.00
Apr 09, 2013
Page 4 of 6
RJK0456DPB
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
Preliminary
D=1
0.5
0.3
0.2
0.1
0.1
0.05
0.03
2
0.0
lse
01
t pu
0.
o
h
1s
P
DM
PW
T
1m
10 m
100 m
1
D=
PW
T
0.01
10
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
1
2
L
•
I
AP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
V
DD
V
DS
V
DS
Monitor
L
I
AP
Monitor
E
AS
=
Rg
D. U. T
I
D
Vin
15 V
0
V
DD
Switching Time Test Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
= 10 V
Vin
Vout
Vin
10 V
Vout
Monitor
Switching Time Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS1051EJ0300 Rev.3.00
Apr 09, 2013
Page 5 of 6
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