PD - 95516A
HEXFET
®
Power MOSFET
Applications
l
High frequency DC-DC converters
l
Lead-Free
Benefits
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
IRFR3418PbF
IRFU3418PbF
14m
:
V
DSS
80V
R
DS(on)
Max
I
D
30A
D-Pak
IRFR3418
I-Pak
IRFU3418
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
dv/dt
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
80
± 20
70
50
280
140
3.8
0.95
5.2
-55 to + 175
Units
V
h
A
W
c
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt
Operating Junction and
e
W/°C
V/ns
°C
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mount) *
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.05
40
110
Units
°C/W
Notes
through
are on page 10
www.irf.com
1
12/03/04
IRFR/U3418PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
80
–––
–––
3.5
–––
–––
–––
–––
–––
0.08
11.5
–––
–––
–––
–––
–––
–––
–––
14
5.5
1.0
250
100
-100
nA
V
mΩ
V
µA
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 18A
V
DS
= 80V, V
GS
= 0V
V
DS
= 64V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
V/°C Reference to 25°C, I
D
= 1mA
f
V
DS
= V
GS
, I
D
= 250µA
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter
gfs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
66
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
63
23
23
24
72
41
27
3510
330
190
1220
240
360
–––
94
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
S
I
D
= 18A
V
DS
= 40V
V
GS
= 10V
V
DD
= 40V
I
D
= 18A
R
G
= 6.8Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
Conditions
V
DS
= 25V, I
D
= 18A
f
f
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 64V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 64V
e
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Ã
dh
Typ.
–––
–––
Max.
260
18
Units
mJ
A
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
57
130
70
280
1.3
–––
–––
V
ns
nC
A
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ãh
p-n junction diode.
T
J
= 25°C, I
S
= 18A, V
GS
= 0V
f
T
J
= 150°C, I
F
= 18A, V
DD
= 25V
di/dt = 100A/µs
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFR/U3418PbF
1000
TOP
VGS
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
6.0V
1000
TOP
VGS
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
6.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
100
BOTTOM
10
BOTTOM
1
10
6.0V
1
0.1
6.0V
0.01
20µs PULSE WIDTH
Tj = 25°C
0.001
0.1
1
10
100
1000
0.1
0.1
1
20µs PULSE WIDTH
Tj = 175°C
10
100
1000
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.00
2.5
I
D
= 70A
100.00
T J = 175°C
10.00
1.00
T J = 25°C
0.10
VDS = 25V
20µs PULSE WIDTH
0.01
5
6
7
8
9
10
11
12
13
14
15
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current
(Α
)
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
T
T
J
,
Junction Temperature
(°C)
(
°
C)
VGS , Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFR/U3418PbF
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
12.0
ID= 18A
VGS , Gate-to-Source Voltage (V)
10.0
10000
VDS= 64V
VDS= 40V
VDS= 16V
C, Capacitance(pF)
Ciss
1000
8.0
6.0
Coss
Crss
100
4.0
2.0
10
1
10
100
0.0
0
10
20
30
40
50
60
70
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.00
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.00
T J = 175°C
10.00
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100
100µsec
10
1msec
1
TC = 25°C
Tj = 175°C
Single Pulse
0.1
10msec
1.00
T J = 25°C
VGS = 0V
0.10
0.0
0.5
1.0
1.5
2.0
VSD, Source-toDrain Voltage (V)
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFR/U3418PbF
80
V
DS
LIMITED BY PACKAGE
R
D
V
GS
R
G
V
GS
D.U.T.
+
I
D
, Drain Current (A)
60
-
V
DD
40
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
20
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( °C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
P
DM
t
1
t
2
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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