SiBar Thyristor Surge Protectors
TVBxxxSB-L Series
Circuit Protection's SiBar thyristor surge protection
devices
are
designed
to
help
protect
sensitive
telecommunication equipment from the hazards caused
by lightning, power contact, and power induction. These
devices have a high electrical surge capability to help
protect against transient faults and a high off-state
impedance, rendering them virtually transparent during
normal system operation.
SiBar thyristor surge protectors are designed to assist
telecommunication and computer telephony equipment
in meeting the applicable requirements and industry
specifications.
Benefits:
Features:
• RoHS compliant
• Helps provide protection for sensitive telecom
electronic equipment
• Low leakage current
• Low power dissipation
• Fast, reliable operation
• No wear-out mechanisms
• Helps designers meet worldwide telecom standards
• Helps reduce warranty and service costs
• Easy installation
• Helps improve power efficiency of equipment
• Bidirectional crowbar transient voltage protection
• Broad voltage range 200V – 300V
• High off-state impedance
• Low on-state voltage
• High surge capability
• Short-circuit failure mode
• Surface-mount technology
• DO-214AA SMB package
• 10 x 1000
μs
75A and 80A surge rating
• Helps equipment comply with TIA-968,
Telcordia GR-1089, IEC61000-4-5, ITU K.20/21/45
Applications:
• Modems
• Fax machines
• Set top boxes
• POS systems
• Phones, answering machines • Analog and digital linecards (xDSL , T1/E1...)
• PBX systems
• Other customer premise and central office network equipment requiring protection
Document: SCD 27171
SiBar Thyristor Surge Protectors
© 2007, 2009 Tyco Electronics Corporation. All rights Reserved.
1
Status: Released
Rev: C
Date: APRIL 2, 2009
SiBar Thyristor Surge Protectors
TVBxxxSB-L Series
Table SB1 - Electrical Characteristics
Part Number
TVB200SB-L
TVB270SB-L
TVB300SB-L
V
DM
Max.
(V)
200
275
300
V
BO
Max.
(V)
320
350
400
I
H
Min.
(mA)
150
150
150
V
T
Max.
(V)
4
4
4
C1 (Typ)
@50V
DC
Bias
(pF)
30
25
21
C2 (Typ)
@2V
DC
Bias
(pF)
49
50
42
Off-State
Current
@VDM
(μA)
5
5
5
Notes: All electrical characteristics are measured at 25°C.
V
DM
measured per UL497B pulse requirements: at max. off-state leakage current (IDM) = 5 µA.
V
BO
measured at 100V/µs.
Table SB2 – Surge Current Rating
TIA-968
Type A
Part Number
TVBxxxSB-L
I
pp
(A)
5 x 320 µs
100
Type B
I
pp
(A)
pp
(A)
10 x 560 µs 10 x 160 µs
100
150
I
pp
(A)
I
pp
(A)
10 x 1000 µs 2 x 10 µs
80
250
I
pp
(A)
8 x 20 µs
250
I
TSM
I
PP
(A)
di/dt dV/dt
5 x 310
μs
Min.
(A/µs) (V/µs)
(VOC: 10 x 700μs) (A)
100
30 500 2000
Telcordia GR-1089*
IEC61000-4-5
ITU K.20/21/45*
Notes: *Lightning current wave forms for applicable industry specification.
I
TSM
, peak on-state surge current is measured at 60 Hz, one cycle.
di/dt: critical rate-of-rise of on-state current (pulsed power amplifier Vmax = 600V; C = 30µF).
dV/dt: critical rate-of-rise of off-stage voltage (linear wave form, V
D
= rated V
BO
, Tj = 25°C)
Document: SCD 27171
SiBar Thyristor Surge Protectors
© 2007, 2009 Tyco Electronics Corporation. All rights Reserved.
2
Status: Released
Rev: C
Date: APRIL 2, 2009
SiBar Thyristor Surge Protectors
TVBxxxSB-L Series
Table SB3 – Dimensions in Millimeters
A
Dimension
TVBxxxSB-L
Min.
4.06
(0.160)
H
Dimension
TVBxxxSB-L
Min.
0.051
(0.002)
Max.
0.200
(0.008)
Min.
0.150
(0.006)
Max.
4.57
(0.180)
Min.
3.30
(0.130)
J
Max.
0.31
(0.012)
Min.
0.76
(0.030)
B
Max.
3.94
(0.155)
Min.
1.90
(0.075)
K
Max.
1.27
(0.050)
C
Max.
2.41
(0.095)
P
Ref.
0.51
(0.020)
Min.
5.21
(0.205)
Min.
1.95
(0.077)
S
Max.
5.59
(0.220)
D*
Max.
2.20
(0.087)
Notes: *D dimension is measured within dimension P.
TVB series devices use industry standard SMB package type.
All devices are bidirectional and may be oriented in either direction for installation
Table SB4 – Physical Characteristics and Environmental Specifications
Lead material
Encapsulating material
Solderability
Solder heat withstand
Solvent resistance
Mechanical shock
Vibration
Storage temperature (°C)
Operating temperature (°C)
Junction temperature (°C)
Matte tin finish (-L devices)
Epoxy, meets UL94V-0 requirements
per MIL-STD-750, Method 2026
per MIL-STD-750, Method 2031
per MIL-STD-750, Method 1022
per MIL-STD-750, Method 2016
per MIL-STD-750, Method 2056
-55 to 150
-40 to 125
150
Maximum Lead Temperature for Soldering Purpose; for 10s (°C) 260
Table SB5 – Reliability Tests
Test
High temperature, reverse bias
High humidity, high temperature, reverse bias
High temperature storage life
Temperature cycling
Autoclave
Conditions
+100°C, 50VDC bias
85% RH, +85°C, 50VDC bias
+150°C
-65°C to +150°C, 15 minute dwell
100% RH, +121°C, 15 PSI
Duration
1000 hours
1000 hours
1000 hours
1000 cycles
96 hours
Document: SCD 27171
SiBar Thyristor Surge Protectors
© 2007, 2009 Tyco Electronics Corporation. All rights Reserved.
3
Status: Released
Rev: C
Date: APRIL 2, 2009
SiBar Thyristor Surge Protectors
TVBxxxSB-L Series
Document: SCD 27171
SiBar Thyristor Surge Protectors
© 2007, 2009 Tyco Electronics Corporation. All rights Reserved.
4
Status: Released
Rev: C
Date: APRIL 2, 2009
SiBar Thyristor Surge Protectors
TVBxxxSB-L Series
Table SB6 – Packaging and Marking Information
Recommended Pad Layout (millimeters/inchs)
Part
Description
TVB200SB-L
TVB270SB-L
TVB300SB-L
Tape and
Reel
Quantity
2,500
2,500
2,500
Standard
Package
10,000
10,000
10,000
Part
Marking
200B
270B
300B
Dimension
A (Nom.)
2.261 (0.089)
2.261 (0.089)
2.261 (0.089)
Dimension
B (Nom.)
2.159(0.085)
2.159(0.085)
2.159(0.085)
Dimension
C (Nom.)
2.743(0.108)
2.743(0.108)
2.743(0.108)
Agency
Recognition*
UL
UL
UL
*UL497B, File # E179610
308 Constitution Drive, MS R21/2A
Menlo Park, CA USA 94025-1164
Tel (800) 227-7040
(650) 361-6900
Fax (650) 361-2508
www.circuitproection.com
www.circuitprotection.com.hk (Chinese)
www.circuitprotection.jp (Japanese)
Raychem, PolySwitch, SiBar, TE Logo and Tyco Electronics are trademarks.
All other trademarks and copyrights are property of their respective owners.
Document: SCD 27171
SiBar Thyristor Surge Protectors
© 2007, 2009 Tyco Electronics Corporation. All rights Reserved.
5
Status: Released
Rev: C
Date: APRIL 2, 2009
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