ALS31300
3-D Linear Hall-Effect Sensor with I
2
C Output
and Advanced Low Power Management
FEATURES AND BENEFITS
• X- and Y-axis sensing of joystick position
• Z-axis sensing of “crouch” or push button motion
• Capable of operating with back-bias magnets for joystick
return-to-zero
• Ideal for battery-powered, low-voltage applications
□
2.65 to 3.5 V single supply operation
□
1 MHz I
2
C compatibility down to 1.8 V
□
14 nA (typ) Sleep I
CC
□
12 µA to 2 mA I
CC
(typ) in low-power duty cycle mode
• Industry standard I
2
C interface for easy system integration
□
Up to 1 MHz (Fast Mode+) I
2
C communication
□
16 selectable addresses via external resistor divider
□
127 available address configurable via EEPROM
• On-chip EEPROM
□
Stores factory- and user-configured settings
□
78 bits of user EEPROM for additional storage
□
On-chip charge pump for easy programming
Continued on next page...
DESCRIPTION
The ALS31300 three-axis linear Hall-effect sensor IC provides
a 12-bit digital value corresponding to the magnetic field
measured in each of the X, Y, and Z axes. The ALS31300 is
preconfigured for use in 3D sensing applications for head-on
linear motion, slide-by position sensing, and rotation angle
measurements. The ALS31300 is also offered in joystick mode,
including a low gain option for the Z axis channel. This feature
enables the use of a back-bias magnet to provide return-to-zero
force instead of traditional spring-based solutions.
Three different factory-programmed sensitivity ranges are
available: ±500 G, ±1000 G, and ±2000 G.
The I
2
C address of the ALS31300 can be set either by external
resistors (16 unique addresses) or programmed into EEPROM
via I
2
C (127 unique addresses), allowing for multiple devices
on the same bus. The ALS31300 also includes 78 bits of user
EEPROM.
Power management of the ALS31300 is highly configurable,
allowing for system-level optimization of supply current and
performance. Sleep mode consumes just 14 nA (typical),
making the ALS31300 well suited for portable, battery-operated
applications.
The ALS31300 is supplied in a 3 mm × 3 mm × 0.8 mm,
10-contact DFN package (“EJ”). This small footprint package
is lead (Pb) free, with 100 % matte-tin leadframe plating.
PACKAGE: 10-Contact DFN (EJ)
Pin 1
Z
Y
X
Not to scale
VCC
Power
Controller
Temp
Sensor
I
2
C Serial
Interface
SDA
SCL
ADR0
ADR1
INT
Z
Y
X
Hall
Elements
MUX
ADC
Digital
Controller
Slave
Address
ADC
Charge
Pump
GND
EEPROM
Memory
Figure 1: Functional Block Diagram
ALS31300-DS, Rev. 6
MCO-0000228
August 31, 2018
ALS31300
3-D Linear Hall-Effect Sensor with I
2
C Output
and Advanced Low Power Management
• Flexible 12-bit ADC with 10-bit ENOB (Effective Number of Bits)
• 1% (typ) accurate factory-trimmed sensitivity options
(±500 G, ±1000 G, and ±2000 G full-scale input)
• Integrated temperature sensor
• Wide ambient temperature range: –40°C to 85°C
• 10-contact 3 mm × 3 mm × 0.8 mm DFN package for
implementation in low-profile, high-density PCB designs and
space-constrained applications
FEATURES AND BENEFITS (continued)
SELECTION GUIDE
Part Number
ALS31300EEJASR-500
ALS31300EEJASR-1000
ALS31300EEJASR-2000
ALS31300EEJASR-JOY
[3]
[1]
[2]
X/Y Channel Sensitivity
(LSB/G)
[1]
4
2
1
1
Z Channel Sensitivity
(LSB/G)
[1]
4
2
1
0.25
Packing
[2]
6000 pieces per 13-inch reel
1 gauss (G) = 0.1 millitesla (mT).
Contact Allegro™ for alternate packing options.
[3]
Joystick devices have reduced gain on the Z axis to accommodate back bias magnets.
NAMING SPECIFICATION
ALS31300EEJASR-500
Factory Configuration: 500 = 500 gauss
Packing Option: SR = 6000 pieces per 13-inch reel
Package Type: EJA = 10-contact DFN
Operating Temperature Range (T
A
): E = –40°C to 85°C
Allegro Linear Sensor 5-digit part number
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
2
ALS31300
3-D Linear Hall-Effect Sensor with I
2
C Output
and Advanced Low Power Management
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS
Characteristic
Forward Supply Voltage
Reverse Supply Voltage
All Other Pins Forward Voltage
All Other Pins Reverse Voltage
Operating Ambient Temperature
Maximum Junction Temperature
Storage Temperature
[1]
EEPROM Write Count
[1]
Symbol
V
CC
V
RCC
V
IN
V
R
T
A
T
J(MAX)
T
stg
–
Range E
Notes
Rating
5.5
–0.1
5.5
–0.1
–40 to 85
165
–65 to 170
Unit
V
V
V
V
°C
°C
°C
writes
Number of times EEPROM can be written
1000
Stresses beyond the Absolute Maximum Ratings may result in permanent device damage. Exposure to absolute maximum rating conditions for
extended periods of time may affect device reliability.
THERMAL CHARACTERISTICS
[2]
Characteristic
Package Thermal Resistance
[3]
[2]
Symbol
R
θJA
Test Conditions
Measured on 2-layer board with copper limited to the solder pads and
0.88 in.
2
of copper on each side
Value
65
Unit
°C/W
[3]
Additional
Thermal characteristics may require derating at maximum conditions. See application section for more information.
thermal information available on the Allegro website.
VCC
10 kΩ
10 kΩ
VCC
Customer
Microcontroller
VCC
SCL
SDA
VCC
C
BYPASS
0.1 µF
ADR0
ALS31300
10 kΩ
ADR1
INT
GND
Figure 2: Typical Application
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
3
ALS31300
3-D Linear Hall-Effect Sensor with I
2
C Output
and Advanced Low Power Management
PINOUT DIAGRAM AND TERMINAL LIST TABLE
VCC
ADR0
GND
INT
NC
1
2
3
4
5
PAD
10 NC
9
8
7
6
NC
SCL
SDA
ADR1
Package EJ, 10-Contact DFN Pinout Digram
Terminal List Table
Number
1
2
Name
VCC
ADR0
Function
Power supply input. Bypass VCC to GND with a 0.1 µF capacitor.
I
2
C Address Select 0. Connect a resistive divider to ADR0 to
select the device address. See Application Information section on
addressing for more information.
Ground signal terminal.
Interrupt output. See Application Information section on interrupt
function for more information.
Not internally connected. Connect to GND.
I
2
C Address Select 1. Connect a resistive divider to ADR1 to select
the device’s address. See Application Information section on
addressing for more information.
I
2
C serial data input/output. Open-drain.
I
2
C serial clock input
Exposed pad. Not connected internally.
3
4
5, 9, 10
6
GND
INT
NC
ADR1
7
8
–
SDA
SCL
PAD
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
4
ALS31300
3-D Linear Hall-Effect Sensor with I
2
C Output
and Advanced Low Power Management
ELECTRICAL CHARACTERISTICS:
Valid at T
A
= 25°C, V
CC
= 3.0 V, C
BYPASS
= 0.1 µF, unless otherwise specified
Characteristics
ELECTRICAL CHARACTERISTICS
Supply Voltage
V
CC
I
CC(ACTIVE)
Normal operation
EEPROM programming
[2]
Sleep = 0, or active state when sleep = 2
Average current in LPDCM; Sleep = 2,
LPM_CNT_MAX = 7, BW Select = 6
Average current in LPDCM; Sleep = 2,
LPP_CNT_MAX = 0, BW Select = 0
V
CC
= 3.0 V, Sleep mode = 1
V
CC
= V
CC(MAX)
, EEPROM programming
occurring
[2]
T
A
= 25°C, after V
CC
reaches V
CC(MIN)
,
BW Select = 0
Wait after writing to EEPROM
Through full range of B
IN
NdFeB magnet
2.65
2.8
–
–
–
–
–
–
–
–
–
–
–
V
IN
= 0 V to V
CC
–1
2.4
–
ADR0, ADR1
ADR0, ADR1
ADR0, ADR1
ADR0, ADR1
ADR0, ADR1
–
0.23
0.57
0.9
0.8
3.0
–
3.4
12
12
2
14
6.2
600
50
±1.7
0.12
90
0
10
3.0
0
0.33
0.67
1
1
3.5
3.5
3.9
–
–
–
100
6.7
–
–
–
–
–
1
–
3.5
0.1
0.43
0.77
–
1.2
V
V
mA
µA
µA
mA
nA
mA
µs
ms
%
% / °C
Ω
µA
kΩ
V
× V
CC
× V
CC
× V
CC
× V
CC
MΩ
Symbol
Test Conditions
Min.
Typ.
[1]
Max.
Unit
I
CC(INACTIVE)
Sleep = 2; inactive state
I
CC(LPDCM)
I
CC(SLEEP)
I
CC(EE)
Power-On Delay Time
[4]
EEPROM Write Delay Time
Linearity Sensitivity Error
Sensitivity Temperature Coefficient
[5]
INT PIN CHARACTERISTICS
INT Output On Resistance
INT Input Current
INT Pull Up Resistance
INT Pull Up Voltage
Address Value 0 Reference
Address Value 1 Reference
Address Value 2 Reference
Address Value 3 Reference
Address Pin Input Resistance
[1]
[2]
Supply Current
[3]
t
POD
t
EEP
E
LIN
TC
SENS
R
ON
I
INT(IN)
R
INT(PU)
V
INT(PU)
V
ADDR0
V
ADDR1
V
ADDR2
V
ADDR3
R
ADD(IN)
ADDRESS PIN CHARACTERISTICS
[5]
Typical values with ± are mean ±3 sigma.
Parameter is tested at wafer probe only.
[3]
I
CC
will vary based on lower power duty cycle settings. See Application Information section on power modes.
[4]
The device will not respond to I
2
C inputs until after the power-on delay time. t
POD
will vary based on BW Select code, with code 0 being the slowest.
[5]
Based on characterization data and guaranteed by design. Not verified at final test.
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
5
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