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MT45W4MW16BFB-858WT

产品描述Pseudo Static RAM, 4MX16, 85ns, CMOS, PBGA54, 6 X 8 MM, 1 MM HEIGHT, 0.75 MM PITCH, VFBGA-54
产品类别存储    存储   
文件大小891KB,共61页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
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MT45W4MW16BFB-858WT概述

Pseudo Static RAM, 4MX16, 85ns, CMOS, PBGA54, 6 X 8 MM, 1 MM HEIGHT, 0.75 MM PITCH, VFBGA-54

MT45W4MW16BFB-858WT规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Micron Technology
零件包装代码BGA
包装说明6 X 8 MM, 1 MM HEIGHT, 0.75 MM PITCH, VFBGA-54
针数54
Reach Compliance Codenot_compliant
ECCN代码3A991.B.2.A
Is SamacsysN
最长访问时间85 ns
其他特性SYNCHRONOUS BURST MODE POSSIBLE
I/O 类型COMMON
JESD-30 代码R-PBGA-B54
JESD-609代码e0
长度8 mm
内存密度67108864 bit
内存集成电路类型PSEUDO STATIC RAM
内存宽度16
功能数量1
端子数量54
字数4194304 words
字数代码4000000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-30 °C
组织4MX16
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码VFBGA
封装等效代码BGA54,6X9,30
封装形状RECTANGULAR
封装形式GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行PARALLEL
峰值回流温度(摄氏度)235
电源1.8,1.8/3 V
认证状态Not Qualified
座面最大高度1 mm
最大待机电流0.00012 A
最大压摆率0.035 mA
最大供电电压 (Vsup)1.95 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级OTHER
端子面层Tin/Lead (Sn/Pb)
端子形式BALL
端子节距0.75 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间30
宽度6 mm
Base Number Matches1

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64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Features
Async/Page/Burst CellularRAM
TM
1.0 Memory
MT45W4MW16B*
*Note: Not recommended for new designs.
For the latest data sheet, refer to Micron’s Web site:
http://www.micron.com/products/psram/
Features
• Single device supports asynchronous, page, and
burst operations
• Random access time: 70ns
• V
CC
, V
CC
Q voltages
1.70V–1.95V V
CC
1.70V–3.30V V
CC
Q
• Page mode read access
Sixteen-word page size
Interpage read access: 70ns
Intrapage read access: 20ns
• Burst mode write access
Continuous burst
• Burst mode read access
4, 8, or 16 words, or continuous burst
MAX clock rate: 80 MHz (
t
CLK = 12.5ns)
Burst initial latency: 50ns (4 clocks) @ 80 MHz
t
ACLK: 9ns @ 80 MHz
• Low power consumption
Asynchronous READ: <25mA
Intrapage READ: <15mA
Initial access, burst READ:
(50ns [4 clocks] @ 80 MHz) < 35mA
Continuous burst READ: <15mA
Standby: 120µA – standard
100µA – low-power option
Deep power-down: <10µA (TYP @ 25°C)
• Low-power features
Temperature-compensated refresh (TCR)
Partial-array refresh (PAR)
Deep power-down (DPD) mode
Figure 1:
Ball Assignment – 54-Ball VFBGA
1
A
B
C
D
E
F
G
H
J
LB#
2
OE#
3
A0
4
A1
5
A2
6
CRE
DQ8
UB#
A3
A4
CE#
DQ0
DQ9
DQ10
A5
A6
DQ1
DQ2
V
SS
Q
DQ11
A17
A7
DQ3
V
CC
V
CC
Q
DQ12
A21
A16
DQ4
V
SS
DQ14
DQ13
A14
A15
DQ5
DQ6
DQ15
A19
A12
A13
WE#
DQ7
A18
A8
A9
A10
A11
A20
WAIT
CLK
ADV#
NC
NC
NC
Top View
(Ball Down)
Options (continued)
• Frequency
66 MHz
80 MHz
• Standby power
Standard
Low-power
• Operating temperature range
Wireless (-30°C to +85°C)
Industrial (-40°C to +85°C)
2. Contact factory.
Designator
6
8
None
L
WT
3
IT
2
Options
• Configuration:
4 Meg x 16
• Package
54-ball VFBGA (standard)
54-ball VFBGA (lead-free)
• Timing
70ns access
85ns access
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_1.fm - Rev. G 10/05 EN
Designator
MT45W4MW16B
1
FB
BB
2
-70
-85
Notes: 1. Not recommended for new designs.
3. -30°C exceeds the CellularRAM Working
Group 1.0 specification of -25°C.
Part Number Example:
MT45W4MW16BFB-708LWT
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

 
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