VS-8EWS08S-M3, VS-8EWS12S-M3
www.vishay.com
Vishay Semiconductors
High Voltage Surface Mountable Input Rectifier Diode, 8 A
FEATURES
Base
cathode
+
2
2
3
1
1
Anode -
3
- Anode
• Glass passivated pellet chip junction
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
TO-252AA (D-PAK)
APPLICATIONS
• Input rectification
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
FSM
T
J
max.
Diode variation
TO-252AA (D-PAK)
8A
800 V, 1200 V
1.1 V
150 A
150 °C
Single die
DESCRIPTION
The VS-8EWS..S-M3 rectifier high voltage series has been
optimized for very low forward voltage drop, with moderate
leakage. The glass passivation technology used has reliable
operation up to 150 °C junction temperature.
The
high reverse voltage
range available allows design of
input stage primary rectification with
outstanding voltage
surge
capability.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz. (140 μm) copper
Aluminum IMS, R
thCA
= 15 °C/W
Aluminum IMS with heatsink, R
thCA
= 5 °C/W
Note
• T
A
= 55 °C, T
J
= 125 °C, footprint 300 mm
2
SINGLE-PHASE BRIDGE
1.2
2.5
5.5
THREE-PHASE BRIDGE
1.6
2.8
6.5
A
UNITS
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
8 A, T
J
= 25 °C
CHARACTERISTICS
Sinusoidal waveform
VALUES
8
800/1200
150
1.10
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-8EWS08S-M3
VS-8EWS12S-M3
V
RRM
, MAXIMUM
PEAK REVERSE VOLTAGE
V
800
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1300
I
RRM
AT 150 °C
mA
0.5
Revision: 19-Jan-17
Document Number: 93383
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8EWS08S-M3, VS-8EWS12S-M3
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 105 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
8
125
150
78
110
1100
A
2
s
A
2
s
A
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
8 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
TEST CONDITIONS
VALUES
1.1
20
0.82
0.05
0.50
UNITS
V
m
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
junction to ambient (PCB mount)
Approximate weight
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
(1)
TEST CONDITIONS
VALUES
-55 to +150
UNITS
°C
DC operation
2.5
°C/W
62
1
0.03
g
oz.
8EWS08S
8EWS12S
Marking device
Case style TO-252AA (D-PAK)
Note
(1)
When mounted on 1" square (650 mm
2
) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
Revision: 19-Jan-17
Document Number: 93383
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8EWS08S-M3, VS-8EWS12S-M3
www.vishay.com
Vishay Semiconductors
20
18
16
14
12
10
8
Ø
150
Maximum Allowable Case
Temperature (°C)
140
130
120
110
100
90
80
Ø
Conduction angle
Maximum Average Forward
Power Loss (W)
8EWS. Series
R
thJC
(DC) = 2.5 °C/W
DC
180°
120°
90°
60°
30°
RMS limit
30°
60°
90°
120°
8
10
6
4
2
0
Conduction period
8EWS. Series
T
J
= 150 °C
0
2
4
6
8
10
12
14
16
180°
12
0
2
4
6
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
Maximum Allowable Case
Temperature (°C)
140
130
120
110
100
90
8EWS. Series
R
thJC
(DC) = 2.5 °C/W
140
130
120
At any rated load condition and with
rated V
rrm
applied following
surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083
s
at 50 Hz 0.0100
s
Peak Half Sine Wave
Forward Current (A)
110
100
90
80
70
60
50
40
30
Ø
Conduction period
30°
60°
90°
120°
0
2
4
6
8
10
180°
12
14
DC
16
18
VS-8EWS08S ..
Series
1
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
16
Maximum Average Forward
Power Loss (W)
14
12
10
Peak Half Sine Wave
Forward Current (A)
180°
120°
90°
60°
30°
RMS limit
160
140
120
100
80
60
40
VS-8EWS08S ..
Series
10
20
0.01
0.1
1
10
Maximum non-repetitive
surge
current
versus pulse train duration.
Initial T
J
= T
J
max.
No voltage reapplied
Rated V
rrm
reapplied
8
6
4
2
0
Ø
Conduction angle
8EWS. Series
T
J
= 150 °C
0
2
4
6
8
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 19-Jan-17
Document Number: 93383
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8EWS08S-M3, VS-8EWS12S-M3
www.vishay.com
100
Vishay Semiconductors
T
J
= 25 °C
T
J
= 150 °C
Instantaneous Forward Current (A)
10
8EWS. Series
1
0
0.5
1.0
1.5
2.0
2.5
3.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
10
Z
thJC
- Transient Thermal
Impedance (°C/W)
Steady state value
(DC operation)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
0.1
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Revision: 19-Jan-17
Document Number: 93383
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8EWS08S-M3, VS-8EWS12S-M3
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
6
7
8
-
-
-
8
2
E
3
W
4
S
5
12
6
S
7
TR
8
-M3
9
Vishay Semiconductors product
Current rating (8 = 8 A)
Circuit configuration:
E = single diode
-
Package:
W = D-PAK
-
-
-
-
Type of silicon:
S = standard recovery rectifier
Voltage code x 100 = V
RRM
S = surface mountable
TR = tape and reel
TRR = tape and reel (right oriented)
TRL = tape and reel (left oriented)
08 = 800 V
12 = 1200 V
9
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-8EWS08S-M3
VS-8EWS08STR-M3
VS-8EWS08STRL-M3
VS-8EWS08STRR-M3
VS-8EWS12S-M3
VS-8EWS12STR-M3
VS-8EWS12STRL-M3
VS-8EWS12STRR-M3
QUANTITY PER T/R
75
2000
3000
3000
75
2000
3000
3000
MINIMUM ORDER QUANTITY
3000
2000
3000
3000
3000
2000
3000
3000
PACKAGING DESCRIPTION
Antistatic plastic tubes
13" diameter reel
13" diameter reel
13" diameter reel
Antistatic plastic tubes
13" diameter reel
13" diameter reel
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95627
www.vishay.com/doc?95176
www.vishay.com/doc?95033
Revision: 19-Jan-17
Document Number: 93383
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
