HN4B04J
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
HN4B04J
Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
Switching application
Q1:
Excellent h
FE
linearity
: h
FE(2)
=25 (min) at V
CE
=
−6V,
I
C
=
−400mA
Unit: mm
Q2:
Excellent h
FE
linearity
: h
FE(2)
=25 (min) at V
CE
= 6V, I
C
= 400mA
Q1 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
−35
−30
−5
−500
Unit
V
V
V
mA
1.BASE1
2.EMITTER
3.BASE2
4.COLLECTOR2
5.COLLECTOR1
(B1)
(E)
(B2)
(C2)
(C1)
JEDEC
―
JEITA
―
TOSHIBA
2-3L1A
Weight: 0.014g (typ.)
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
35
30
5
500
Unit
V
V
V
mA
Q1,Q2 Common Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
P
C
*
T
j
T
stg
Rating
300
150
−55
to 150
Unit
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating. Power dissipation per element should not exceed 200mW.
Start of commercial production
2000-06
1
2014-03-01
HN4B04J
Q1
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-Emitter Voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE (sat)
V
BE
f
T
C
ob
Test
Circuit
―
―
―
―
―
―
―
―
Test Condition
V
CB
=
−35V,
I
E
= 0
V
EB
=
−5V,
I
C
= 0
V
CE
=
−1V,
I
C
=
−100mA
V
CE
=
−6V,
I
C
=
−400mA
I
C
=
−100mA,
I
B
=
−10mA
V
CE
=
−1V,
I
C
=
−100mA
V
CE
=
−6V,
I
C
=
−20mA
V
CB
=
−6V,
I
E
= 0, f = 1MHz
Min
―
―
70
25
―
―
―
―
Typ.
―
―
―
―
−0.1
−0.8
200
13
Max
−100
−100
240
―
−0.25
−1.0
―
―
V
V
MHz
pF
Unit
nA
nA
Q2
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-Emitter Voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE (sat)
V
BE
f
T
C
ob
Test
Circuit
―
―
―
―
―
―
―
―
Test Condition
V
CB
= 35V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 1V, I
C
= 100mA
V
CE
= 6V, I
C
= 400mA
I
C
= 100mA, I
B
= 10mA
V
CE
= 1V, I
C
= 100mA
V
CE
= 6V, I
C
= 20mA
V
CB
= 6V, I
E
= 0, f = 1MHz
Min
―
―
70
25
―
―
―
―
Typ.
―
―
―
―
0.1
0.8
300
7
Max
100
100
240
―
0.25
1.0
―
―
V
V
MHz
pF
Unit
nA
nA
Marking
Equivalent Circuit (Top View)
5
4
31
Q1
Q2
1
2
3
2
2014-03-01
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