1. FEATURES ........................................................................................................................................................ 4
2. GENERAL DESCRIPTION ............................................................................................................................... 6
6. DATA PROTECTION.......................................................................................................................................... 9
Table 2. Protected Area Sizes ..............................................................................................................10
9. HOLD FEATURE.............................................................................................................................................. 14
10-18. Page Program (PP) .............................................................................................................................40
10-19. 4 x I/O Page Program (4PP) ................................................................................................................41
10-20. Continuous Program mode (CP mode)................................................................................................44
10-21. Deep Power-down (DP) .......................................................................................................................46
10-22. Release from Deep Power-down (RDP), Read Electronic Signature (RES) .......................................47
10-23. Read Electronic Manufacturer ID & Device ID (REMS), (REMS2), (REMS4) .....................................49
10-24. ID Read ................................................................................................................................................50
11. POWER-ON STATE ....................................................................................................................................... 69
13-1. Initial Delivery State .............................................................................................................................77
15. ERASE AND PROGRAMMING PERFORMANCE ........................................................................................ 80
16. DATA RETENTION ........................................................................................................................................ 80
18. ORDERING INFORMATION .......................................................................................................................... 81
19. PART NAME DESCRIPTION ......................................................................................................................... 82
20. PACKAGE INFORMATION ............................................................................................................................ 83
21. REVISION HISTORY ..................................................................................................................................... 86
10-28.
10-29.
10-30.
10-31.
10-32.
10-33.
10-34.
10-35.
10-36.
10-37.
P/N: PM1773
3
REV. 1.6, JUN. 27, 2014
MX25L3235E
32M-BIT [x 1/x 2/x 4] CMOS MXSMIO
®
(SERIAL MULTI I/O) FLASH MEMORY
1. FEATURES
GENERAL
•
Supports Serial Peripheral Interface -- Mode 0 and Mode 3
•
33,554,432 x 1 bit structure or 16,777,216 x 2 bits (two I/O mode) structure or 8,388,608 x 4 bits (four I/O
mode) structure
• 1024 Equal Sectors with 4K bytes each
- Any Sector can be erased individually
• 128 Equal Blocks with 32K bytes each
- Any Block can be erased individually
• 64 Equal Blocks with 64K bytes each
- Any Block can be erased individually
• Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 100mA from -1V to Vcc +1V
PERFORMANCE
• High Performance
VCC = 2.7~3.6V
- Normal read
- 50MHz
- Fast read
- 1 I/O: 104MHz with 8 dummy cycles
- 2 I/O: 86MHz with 4 dummy cycles for 2READ instruction
- 4 I/O: Up to 104MHz
- Configurable dummy cycle number for 4 I/O read operation
- Fast program time: 0.7ms(typ.) and 3ms(max.)/page (256-byte per page)
- Byte program time: 12us (typical)
- Continuous Program mode (automatically increase address under word program mode)
- Fast erase time: 30ms (typ.)/sector (4K-byte per sector) ; 0.25s(typ.) /block (64K-byte per block); 10s(typ.) /
chip
• Low Power Consumption
- Low active read current: 19mA(max.) at 104MHz, 10mA(max.) at 33MHz
- Low active programming current: 15mA (typ.)
- Low active sector erase current: 10mA (typ.)
- Low standby current: 15uA (typ.)
- Deep power down current: 1uA (typ.)
• Typical 100,000 erase/program cycles
• 20 years data retention
P/N: PM1773
4
REV. 1.6, JUN. 27, 2014
MX25L3235E
SOFTWARE FEATURES
• Input Data Format
- 1-byte Command code
• Advanced Security Features
- BP0-BP3 block group protect
- Flexible individual block protect when OTP WPSEL=1
- Additional 4K bits secured OTP for unique identifier
• Auto Erase and Auto Program Algorithms
the program pulse width (Any page to be programmed should have page in the erased state first.)
•
Status Register Feature
•
Electronic Identification
- RES command for 1-byte Device ID
- The REMS,REMS2, REMS4 commands for 1-byte Manufacturer ID and 1-byte Device ID
•
Support Serial Flash Discoverable Parameters (SFDP) mode
HARDWARE FEATURES
•
SCLK Input
-
Serial clock input
• SI/SIO0
-
Serial Data Input or Serial Data Input/Output for 2 x I/O mode and 4 x I/O mode
• SO/SIO1
-
Serial Data Output or Serial Data Input/Output for 2 x I/O mode and 4 x I/O mode
• WP#/SIO2
-
Hardware write protection or serial data Input/Output for 4 x I/O mode
• HOLD#/SIO3
-
To pause the device without deselecting the device or serial data Input/Output for 4 x I/O mode
• PACKAGE
- 16-pin SOP (300mil)
-
8-pin SOP (200mil)
-
8-WSON (6x5mm)
-
All devices are RoHS Compliant and Halogen-free
-
Automatically erases and verifies data at selected sector
-
Automatically programs and verifies data at selected page by an internal algorithm that automatically times
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