1N4150 / FDLL4150
Discrete POWER & Signal
Technologies
1N4150 / FDLL4150
COLOR BAND MARKING
DEVICE
FDLL4150
1ST BAND 2ND BAND
BLACK
ORANGE
LL-34
DO-35
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
High Conductance Ultra Fast Diode
Sourced from Process 1R. See MMBD1201-1205 for characteristics.
Absolute Maximum Ratings*
Symbol
W
IV
I
O
I
F
i
f
i
f(surge)
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
TA = 25°C unless otherwise noted
Parameter
Value
50
200
400
600
1.0
4.0
-65 to +200
175
Units
V
mA
mA
mA
A
A
°C
°C
T
stg
T
J
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 200 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max
1N / FDLL 4150
500
3.33
300
Units
mW
mW/°C
°C/W
ã
1997 Fairchild Semiconductor Corporation
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effectiveness.
reasonably expected to result in significant injury to the
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
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This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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