FGPF90N30 300V, 90A PDP IGBT
October 2006
FGPF90N30
300V, 90A PDP IGBT
Features
• High Current Capability
• Low saturation voltage: V
CE(sat) =
1.5V @ I
C
= 60A
• High Input Impedance
• Fast switch
• RoHS Complaint
tm
Description
Employing Unified IGBT Technology, Fairchild's PDP IGBTs
provides low conduction and switching loss. FGPF90N30 offers
the optimum solution for PDP applications where low-condution
loss is essential.
Application
. PDP System
TO-220F
1
1.Gate
2.Collector
3.Emitter
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C pulse(1)
P
D
T
J
T
stg
T
L
Gate-Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ T
C
= 25
o
C
@ T
C
= 25
o
C
@ T
C
= 100
ο
C
Description
Collector-Emitter Voltage
FGPF90N30
300
±
30
220
56.8
22.7
-55 to +150
-55 to +150
300
Units
V
V
A
W
W
o
C
o
C
o
C
Thermal Characteristics
Symbol
R
θJC
(IGBT)
R
θJA
Notes:
(1)Repetitive test , pluse width = 100usec , Duty = 0.1
* Ic_pluse limited by max Tj
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
Max.
2.2
62.5
Units
o
C/W
o
C/W
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGPF90N30 Rev. A
FGPF90N30 300V, 90A PDP IGBT
Package Marking and Ordering Information
Device Marking
FGPF90N30
Device
FGFP90N30TU
Package
TO-220F
T
C
= 25
o
C unless otherwise noted
Packaging
Type
Rail / Tube
Max Qty
Qty per Tube
50ea
per Box
-
Electrical Characteristics
Symbol
Off Characteristics
BV
CES
∆B
VCES
∆T
J
I
CES
I
GES
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 250uA
V
GE
= 0V, I
C
= 250uA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
300
--
--
--
--
0.6
--
--
--
--
100
± 250
V
V/
o
C
uA
nA
On Characteristics
V
GE(th)
G-E Threshold Voltage
I
C
= 250uA, V
CE
= V
GE
I
C
=30A
,
V
GE
= 15V
I
C
=60A
,
V
GE
= 15V
V
CE(sat)
Collector to Emitter Saturation Voltage
I
C
= 90A
,
V
GE
= 15V
T
C
= 25
ο
C
I
C
= 90A
,
V
GE
= 15V
T
C
= 125
ο
C
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V
f = 1MHz
--
--
--
1690
240
80
--
--
--
pF
pF
pF
2.5
--
--
--
--
4.0
1.25
1.5
1.9
2.0
5.0
1.55
--
--
--
V
V
V
V
V
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
ge
Q
gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 200 V, I
C
= 60A
V
GE
= 15V
V
CC
= 200 V, I
C
= 60A
R
G
= 10Ω, V
GE
= 15V
Resistive Load, T
C
= 125
ο
C
V
CC
= 200 V, I
C
= 60A
R
G
= 10Ω, V
GE
= 15V
Resistive Load, T
C
= 25
o
C
--
--
--
--
--
--
--
--
--
--
--
22
106
86
130
22
119
91
210
93
45
14
--
--
--
300
--
--
--
--
--
--
--
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
2
FGPF90N30 Rev. A
www.fairchildsemi.com
FGPF90N30 300V, 90A PDP IGBT
Typical Performance Characteristics
Typical Saturation VoltageCharacteristics
Figure 1. Typical Output Characteristics
240
T
C
= 25 C
o
Figure 2. Typical Output Characteristics
240
T
C
= 125 C
o
Collector Current, I
C
[A]
Collector Current, I
C
[A]
20V
15V
12V
20V
15V
12V
180
180
120
10V
120
10V
60
V
GE
= 8V
60
V
GE
= 8V
0
0
2
4
6
8
Collector-Emitter Voltage, V
CE
[V]
10
0
0
2
4
6
8
Collector-Emitter Voltage, V
CE
[V]
10
Figure 3. Saturation Voltage
240
Common Emitter
V
GE
= 15V
Figure 4. Transfer Characteristics
240
V
CE
= 20V
Collector-Emitter Current, I
CE
[
V
]
Collector Current, I
C
[A]
180
T
C
= 25 C
T
C
= 125 C
o
o
180
120
120
60
60
125 C
o
25 C
o
0
0
2
4
Collector-Emitter Voltage, V
CE
[V]
5
0
0
4
8
12
16
Gate-Emitter Voltage, [V]
20
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
2.0
Collector-Emitter Voltage, V
CE
[V]
Figure 6. Saturation Voltage vs.V
GE
20
Collector-Emitter Voltage, V
CE
[V]
Common Emitter
T = 25 C
C
o
90A
1.8
16
1.6
60A
12
1.4
I
C
= 30A
Common Emitter
V
GE
= 15V
8
90A
1.2
4
60A
I
C
=30A
1.0
25
50
75
100
o
Collector-ECase Temperature, T
C
[
C
]
125
0
0
4
8
12
16
Gate-Emitter Voltage, V
GE
[V]
20
3
FGPF90N30 Rev. A
www.fairchildsemi.com
FGPF90N30 300V, 90A PDP IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
GE
20
Common Emitter
T
C
= 125 C
o
(Continued)
Figure 8. Capacitance Characteristics
4000
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25 C
o
Collector-Emitter Voltage, V
CE
[
V
]
16
Capacitance [pF]
3000
12
2000
C
ies
8
90A
60A
I
C
= 30A
4
1000
C
res
C
oss
0
0
4
8
12
16
Gate-Emitter Voltage, V
GE
[V]
20
0
0
5
10
15
20
25
Collector-Emitter Voltage, V
CE
[V]
30
Figure 9. Gate Charge Characteristics
15
14
Gate-Emitter Voltage, V
GE
[V]
Common Emitter
R
L
= 3.3
Ω
T
C
=
25
o
C
Figure 10. SOA Characteristics
300
100
Collector Current, Ic [A]
1ms
50us
100us
12
10
V
cc
= 100V
10
DC Operation
8
6
4
2
0
0
20
200V
1
Single Nonrepetitive
o
Pulse Tc=25 C
Curves must be derated
linearly with increase
in temperature
0.1
40
60
Gate Charge, Q
g
[nC]
80
100
0.01
0.1
1
10
100
Collector-Emitter Voltage, V
CE
[V]
1000
Figure 11. Turn-On Characteristics vs
Gate Resistance
500
Figure 12. Turn Off Characteristics vs.
Gate Resistance
1000
Switching Time [ns]
Switching Time [ns]
t
r
100
t
f
100
t
d(off)
Common Emitter
V
CC
= 200V, V
GE
= 15V
IC = 60A
T
C
= 25 C
o
o
t
d(on)
Common Emitter
V
CC
= 200V, V
GE
= 15V
I
C
= 60A
T
C
= 25 C
T
C
= 125 C
o
o
10
0
20
40
60
80
Gate Resistance, R
G
[
Ω
]
100
10
0
20
40
T
C
= 125 C
60
80
100
Gate Resistance, R
G
[
Ω
]
4
FGPF90N30 Rev. A
www.fairchildsemi.com
FGPF90N30 300V, 90A PDP IGBT
Typical Performance Characteristics
Figure 13. Turn-On Characteristics vs.
Collector Current
1000
(Continued)
Figure 14. Turn-Off Characteristics
vs. Collector Current
500
t
r
Switching Time [ns]
100
t
d(on)
Switching Time [ns]
t
d(off)
100
t
f
10
Common Emitter
V
GE
= 15V, R
G
= 10
Ω
T
C
= 25 C
T
C
= 125 C
o
o
Common Emitter
V
GE
= 15V, R
G
= 10
Ω
T
C
= 25 C
T
C
= 125 C
o
o
1
10
20
30
40
50
60
70
80
90
10
10
20
30
40
50
60
70
80
90
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Figure 15. Switching Loss vs Gate Resistance
1500
Figure 16. Switching Loss vs
Collector Current
2000
1000
Switching Loss [uJ]
Switching Loss [uJ]
E
off
1000
E
off
E
on
100
Common Emitter
V
GE
= 15V, R
G
= 10
Ω
T
C
= 25 C
T
C
= 125 C
o
o
E
on
Common Emitter
V
CC
= 600V, V
GE
= 15V
I
C
= 40A
T
C
= 25 C
T
C
= 125 C
o
o
100
0
10
20
30 40 50 60 70 80
Gate Resistance, R
G
[
Ω
]
90 100
10
10
20
30
40
50
60
70
80
90
Collector Current, I
C
[A]
Figure 17. Transient Thermal Impedance of IGBT
10
Thermal Response [Zthjc]
1
0 .5
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
0 .1
0 .0 1
1 E -3
1 E -5
1 E -4
1 E -3
0 .0 1
0 .1
1
10
R e c t a n g u la r P u ls e D u r a t i o n [ s e c ]
5
FGPF90N30 Rev. A
www.fairchildsemi.com
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
