VS-8EVH06-M3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt
®
eSMP
®
Series
Heatsink
k
FEATURES
• Hyperfast recovery time, reduced Q
rr
and soft
recovery
• For PFC CRM / CCM operation
• Low forward voltage drop, low power losses
• Low leakage current
• Meets MSL level 1, per
LF maximum peak of 260 °C
J-STD-020,
k
1
1
2
Pin 2
2
SlimDPAK
(TO-252AE)
Pin 1
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
(typ.)
T
J
max.
Diode variation
SlimDPAK (TO-252AE)
8A
600 V
1.3 V
16 ns
175 °C
Single
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS inverters, or as freewheeling
diodes. Their extremely optimized stored charge and low
recovery current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
MECHANICAL DATA
Case:
SlimDPAK
Molding compound meets UL 94 V-0 flammability rating
Base PN/-M3 - halogen-free, RoHS-compliant
Terminals:
matte tin plated
J-STD-002 and JESD 22-B102
leads,
solderable
per
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 144 °C
T
J
= 25 °C
TEST CONDITIONS
VALUES
600
8
90
-55 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
I
R
= 100 μA
I
F
= 8 A
I
F
= 8 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
TEST CONDITIONS
MIN.
600
-
-
-
-
-
TYP.
-
1.6
1.3
-
-
12
MAX.
-
2.40
1.7
20
500
-
μA
pF
V
UNITS
Reverse leakage current
Junction capacitance
Revision: 06-Jul-17
Document Number: 96151
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8EVH06-M3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 0.5 A, I
R
= 1 A, I
RR
= 0.25 A
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 8 A
dI
F
/dt = 500 A/μs
V
R
= 400 V
MIN.
-
-
-
-
-
-
-
-
-
TYP.
21
16
-
25
65
4.9
8.2
90
260
MAX.
-
-
25
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature
range
Thermal resistance, junction to case
Marking device
SYMBOL
T
J
, T
Stg
R
thJC
Case style SlimDPAK (TO-252AE)
TEST CONDITIONS
MIN.
-55
-
TYP.
-
-
MAX.
175
2.2
8EVH06
UNITS
°C
°C/W
I
F
- Instantaneous Forward Current (A)
100
1000
100
10
1
0.1
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
0
100
200
300
400
500
600
175 °C
I
R
- Reverse Current (μA)
10
T
J
= 175 °C
150 °C
1
T
J
= 150 °C
T
J
= 25 °C
0.1
25 °C
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 06-Jul-17
Document Number: 96151
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8EVH06-M3
www.vishay.com
100
Vishay Semiconductors
C
T
- Junction Capacitance (pF)
10
0
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single
pulse
(thermal resistance)
DC
0.01
0.0001
0.001
0.01
0.1
P
DM
t
1
t
2
0.1
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
1
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
180
20
RMS limit
15
Allowable Case Temperature (°C)
160
150
140
130
120
0
2
4
6
8
10
12
Square
wave (D = 0.50)
80 % rated V
R
applied
See
note
(1)
Average Power Loss (W)
170
DC
10
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
0
2
4
6
8
10
12
5
0
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 06-Jul-17
Document Number: 96151
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8EVH06-M3
www.vishay.com
Vishay Semiconductors
400
120
100
300
80
125 °C
t
rr
(ns)
Q
rr
(nC)
125 °C
200
25 °C
60
40
100
25 °C
20
100
200
300
400
500
0
100
200
300
400
500
dI
F
/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 06-Jul-17
Document Number: 96151
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8EVH06-M3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
5
6
7
-
-
-
-
-
-
-
8
2
E
3
V
4
H
5
06
6
-M3
7
Vishay Semiconductors product
Current rating (8 = 8 A)
Circuit configuration:
E = single die
V = SlimDPAK
Process type:
H = hyperfast recovery
Voltage code (06 = 600 V)
Environmental digit:
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-8EVH06-M3/I
UNIT WEIGHT (g)
0.20
PREFERRED PACKAGE CODE
1
BASE QUANTITY
4500
PACKAGING DESCRIPTION
13"diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?96081
www.vishay.com/doc?96085
www.vishay.com/doc?88869
Revision: 06-Jul-17
Document Number: 96151
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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