PMPB12UNE
12 April 2016
20 V, N-channel Trench MOSFET
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
2. Features and benefits
•
•
•
•
•
Trench MOSFET technology
Low threshold voltage
Exposed drain pad for excellent thermal conduction
Tin-plated 100% solderable side pads for optical solder inspection
ElectroStatic Discharge (ESD) protection > 1 kV HBM
3. Applications
•
•
•
•
LED driver
Power management
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= 4.5 V; T
amb
= 25 °C; t ≤ 5 s
V
GS
= 4.5 V; I
D
= 7.9 A; T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-12
-
Typ
-
-
-
Max
20
12
11.4
Unit
V
V
A
Static characteristics
drain-source on-state
resistance
[1]
-
12
16
mΩ
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
2
Nexperia
PMPB12UNE
20 V, N-channel Trench MOSFET
5. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
8
Pinning information
Symbol Description
D
D
G
S
D
D
D
S
drain
drain
gate
source
drain
drain
drain
source
Simplified outline
1
2
3
7
6
5
4
Graphic symbol
D
G
8
Transparent top view
DFN2020MD-6 (SOT1220)
S
017aaa255
6. Ordering information
Table 3.
Ordering information
Package
Name
PMPB12UNE
Description
Version
SOT1220
DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin
small outline package; no leads; 6 terminals
Type number
7. Marking
Table 4.
Marking codes
Marking code
2Y
Type number
PMPB12UNE
PMPB12UNE
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
12 April 2016
2 / 16
Nexperia
PMPB12UNE
20 V, N-channel Trench MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= 4.5 V; T
amb
= 25 °C; t ≤ 5 s
V
GS
= 4.5 V; T
amb
= 25 °C
V
GS
= 4.5 V; T
amb
= 100 °C
I
DM
P
tot
peak drain current
total power dissipation
T
amb
= 25 °C; single pulse; t
p
≤ 10 µs
T
amb
= 25 °C
T
amb
= 25 °C; t ≤ 5 s
T
sp
= 25 °C
T
j
T
amb
T
stg
I
S
junction temperature
ambient temperature
storage temperature
[2]
[1]
[1]
[1]
[1]
Conditions
T
j
= 25 °C
Min
-
-12
-
-
-
-
-
-
-
-55
-55
-65
Max
20
12
11.4
7.9
5
32
470
1.56
12.5
150
150
150
Unit
V
V
A
A
A
A
mW
W
W
°C
°C
°C
Source-drain diode
source current
[1]
[2]
120
P
der
(%)
80
T
amb
= 25 °C
[1]
-
1.5
2
A
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
017aaa123
120
I
der
(%)
80
017aaa124
40
40
0
- 75
- 25
25
75
125
T
j
(°C)
175
0
- 75
- 25
25
75
125
T
j
(°C)
175
Fig. 1.
Normalized total power dissipation as a
function of junction temperature
Fig. 2.
Normalized continuous drain current as a
function of junction temperature
PMPB12UNE
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
12 April 2016
3 / 16
Nexperia
PMPB12UNE
20 V, N-channel Trench MOSFET
10
2
I
D
(A)
10
Limit R
DSon
= V
DS
/I
D
t
p
= 10 µs
100 µs
1 ms
DC; T
sp
= 25 °C
10
-1
DC; T
amb
= 25 °C;
drain mounting pad 6 cm
2
10 ms
100 ms
aaa-022399
1
10
-2
10
-1
1
10
V
DS
(V)
10
2
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
PMPB12UNE
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
12 April 2016
4 / 16
Nexperia
PMPB12UNE
20 V, N-channel Trench MOSFET
9. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
[1]
[2]
10
3
Z
th(j-a)
(K/W)
10
2
Conditions
in free air
in free air; t ≤ 5 s
[1]
[2]
[2]
Min
-
-
-
-
Typ
230
70
34
5
Max
265
80
39
10
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
aaa-022400
2
duty cycle = 1
0.75
0.33
0.20
0.05
0.01
0.50
0.25
0.10
10
0.02
0
1
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMPB12UNE
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
12 April 2016
5 / 16
电子竞赛
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
