d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 70 °C/W
S17-0792-Rev. B, 22-May-17
Document Number: 77777
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiRA88DP
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
DSt
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, I
D(aval)
= 10 A, t
transcient
≤
50 ns
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= +20, -16 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 8 A
V
DS
= 10 V, I
D
= 10 A
MIN.
30
36
-
-
1.1
-
-
-
30
-
-
-
-
-
-
-
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, di/dt = 100 A/μs,
T
J
= 25 °C
I
S
= 5 A
T
C
= 25 °C
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DS
= 15 V, V
GS
= 0 V
f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
-
-
-
-
-
0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-
15.5
-4.7
-
-
-
-
-
0.0054
0.0078
47
985
305
38
0.039
16.8
8.3
2.1
2.8
8.7
1.7
7
28
14
8
11
47
18
18
-
-
0.77
48
72
40
8
MAX.
-
-
-
-
2.4
± 100
1
10
-
0.0067
0.0100
-
-
-
-
0.078
25.5
12.5
-
-
-
3.1
14
56
28
16
22
94
36
36
22.7
100
1.1
96
140
-
-
ns
Ω
nC
pF
V
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
Drain-source breakdown voltage
(transient)
c
V
DS
temperature coefficient
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state resistance
a
Forward transconductance
a
Dynamic
b, d
mV/°C
V
nA
μA
A
Ω
S
Input capacitance
Input capacitance
Output capacitance
Reverse transfer capacitance
C
rss
/C
iss
ratio
Total gate charge
Gate-source charge
Gate-drain charge
Output charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
a
A
V
ns
nC
ns
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %
b. Guaranteed by design, not subject to production testing
c. T
C
= 25 °C; expected voltage stress during 100 % UIS test. Production data log is not available
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-0792-Rev. B, 22-May-17
Document Number: 77777
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiRA88DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
100
V
GS
= 10 V thru 5 V
V
GS
= 4 V
Vishay Siliconix
Axis Title
10000
80
10000
80
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
60
V
GS
= 3 V
64
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
T
C
= 25 °C
48
40
100
20
V
GS
= 2 V
32
100
16
T
C
= 125 °C
T
C
= -55 °C
0
0
0.5
1
1.5
2
2.5
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Output Characteristics
Transfer Characteristics
Axis Title
0.020
10000
1300
C
iss
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
0.016
2nd line
C - Capacitance (pF)
1000
1st line
2nd line
0.012
V
GS
= 4.5 V
1040
1000
C
oss
0.008
100
0.004
V
GS
= 10 V
520
100
260
C
rss
0
0
20
40
60
80
100
I
D
- Drain Current (A)
2nd line
10
0
0
5
10
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
On-Resistance vs. Drain Current
Capacitance
Axis Title
10
2nd line
V
GS
- Gate-to-Source Voltage (V)
I
D
= 10 A
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Normalized)
1.7
I
D
= 10 A
10000
8
1000
1st line
2nd line
6
1.5
V
GS
= 10 V
1000
1st line
2nd line
100
10
1.3
V
GS
= 4.5 V
4
V
DS
= 10 V, 15 V, 20 V
1.1
100
2
0.9
0
0
4
8
12
16
20
Q
g
- Total Gate Charge (nC)
2nd line
10
0.7
-50
-25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S17-0792-Rev. B, 22-May-17
Document Number: 77777
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1st line
2nd line
780
SiRA88DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
100
10000
0.030
Axis Title
10000
Vishay Siliconix
10
2nd line
I
S
- Source Current (A)
T
J
= 150 °C
2nd line
R
DS(on)
- On-Resistance (Ω)
0.024
1000
1st line
2nd line
100
0.006
T
J
= 25 °C
1000
T
J
= 25 °C
1st line
2nd line
1
0.018
T
J
= 125 °C
0.1
100
0.01
0.012
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
2nd line
10
0.000
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
0.5
10000
200
Axis Title
10000
0.2
2nd line
V
GS(th)
- Variance (V)
1000
2nd line
Power (W)
1st line
2nd line
-0.1
I
D
= 5 mA
160
1000
1st line
2nd line
100
40
10
0.01
0.1
Time (s)
2nd line
1
10
120
-0.4
I
D
= 250 μA
80
100
-0.7
-1.0
-50
-25
0
25
50
75
100 125 150
T
J
- Temperature (°C)
2nd line
10
0
0.001
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
1000
I
DM
limited
10000
100
2nd line
I
D
- Drain Current (A)
100 μs
I
D
limited
1000
1 ms
10 ms
100 ms
100
1s
10 s
DC
BVDSS limited
1
Limited by R
DS(on) (1)
0.1
T
A
= 25 °C
Single pulse
0.01
0.01
(1)
10
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
S17-0792-Rev. B, 22-May-17
Document Number: 77777
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1st line
2nd line
10
SiRA88DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
50
10000
Vishay Siliconix
40
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
100
10
10
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
2nd line
30
20
0
Current Derating
a
Axis Title
30
10000
2.5
Axis Title
10000
24
1000
2nd line
Power (W)
1st line
2nd line
18
2nd line
Power (W)
2.0
1000
1st line
2nd line
100
0.5
10
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
2nd line
1.5
12
100
6
1.0
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
2nd line
10
0
Power, Junction-to-Case
Power, Junction-to-Ambient
Note
a. The power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S17-0792-Rev. B, 22-May-17
Document Number: 77777
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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