• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
D
1
D
2
1
m
5m
2.0
Top View
3
D
2
Bottom View
2
G
1
1
S
1
• Portable devices such as smart phones, tablet PCs and
mobile computing
- Load switch
- DC/DC converter
- Power management
D
1
D
2
Marking Code:
CL
Ordering Information:
SiA918EDJ-T1-GE3 (lead (Pb)-free and halogen free)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak
Temperature)
d,e
T
J
, T
stg
P
D
I
DM
I
S
I
D
SYMBOL
V
DS
V
GS
LIMIT
30
±8
4.5
a
4.5
a
4.4
b, c
3.5
b, c
15
4.5
a
1.6
b, c
7.8
5
1.9
b, c
1.2
b, c
-55 to +150
260
°C
W
A
UNIT
V
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
b, f
Maximum Junction-to-Case (Drain)
t
5s
Steady State
SYMBOL
R
thJA
R
thJC
TYPICAL
52
12.5
MAXIMUM
65
16
UNIT
°C/W
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state condition is 110 °C/W.
S16-1004-Rev. A, 30-May-16
Document Number: 79034
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
2.
2.
05
m
m
m
G
1
G
2
N-Channel MOSFET
S
1
N-Channel MOSFET
S
2
SiA918EDJ
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward
Transconductance
a
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 4.5 V
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 3 A
V
GS
= 2.5 V, I
D
= 3 A
V
GS
= 1.8 V, I
D
= 1 A
V
DS
= 15 V, I
D
= 3 A
V
DS
= 15 V, V
GS
= 8 V, I
D
= 10 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
f = 1 MHz
V
DD
= 15 V, R
L
= 5
I
D
3 A, V
GEN
= 4.5 V, R
g
= 1
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 3 A, dI/dt = 100 A/μs,
T
J
= 25 °C
I
S
= 3 A, V
GS
= 0 V
T
C
= 25 °C
-
-
-
-
-
-
-
-
-
0.84
11
4.4
8
3
4.5
15
1.2
20
10
-
-
A
V
ns
nC
ns
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 5
I
D
3 A, V
GEN
= 8 V, R
g
= 1
-
-
-
-
0.9
-
-
-
-
-
-
-
-
6.2
3.6
0.45
0.53
4.3
5
30
30
41
2
23
11
26
9.5
5.5
-
-
8.6
10
60
60
80
5
50
20
50
ns
nC
30
-
-
0.4
-
-
-
-
10
-
-
-
-
-
28
-2.4
-
-
-
-
-
-
0.046
0.050
0.055
14
-
-
-
0.9
± 0.5
±5
1
10
-
0.058
0.065
0.077
-
S
A
μA
V
mV/°C
V
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-1004-Rev. A, 30-May-16
Document Number: 79034
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA918EDJ
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
15.0
10000
10
-2
Vishay Siliconix
Axis Title
10000
10
-3
2nd line
I
GSS
- Gate Current (mA)
2nd line
I
GSS
- Gate Current (A)
12.0
1000
1st line
2nd line
9.0
T
J
= 25 °C
10
-4
10
-5
10
-6
10
-7
10
-8
T
J
= 150 °C
1000
1st line
2nd line
T
J
= 25 °C
6.0
100
3.0
100
10
-9
0
0
2
4
6
8
10
12
14
16
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
10
-10
0
3
6
9
12
15
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
Axis Title
15
V
GS
= 5 V thru 2 V
Axis Title
10000
15
10000
12
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
9
2nd line
I
D
- Drain Current (A)
12
1000
1st line
2nd line
T
C
= 25 °C
9
6
V
GS
= 1.5 V
6
100
100
3
V
GS
= 1 V
3
T
C
= 125 °C
T
C
= -55 °C
0
0
0.5
1
1.5
2
2.5
3
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
0
0
0.5
1
1.5
2
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Output Characteristics
Transfer Characteristics
Axis Title
0.12
10000
500
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
2nd line
C - Capacitance (pF)
0.09
1000
1st line
2nd line
V
GS
= 1.8 V
400
C
iss
1000
1st line
2nd line
300
0.06
V
GS
= 2.5 V
200
C
oss
0.03
V
GS
= 4.5 V
100
100
C
rss
100
0
0
3
6
9
12
15
I
D
- Drain Current (A)
2nd line
10
0
0
5
10
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
S16-1004-Rev. A, 30-May-16
Document Number: 79034
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA918EDJ
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
8
2nd line
V
GS
- Gate-to-Source Voltage (V)
I
D
= 10 A
Vishay Siliconix
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Normalized)
1.8
I
D
= 3 A
V
GS
= 4.5 V; 2.5 V
10000
1.6
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
2nd line
10
V
GS
= 1.8 V
6
1000
4
V
DS
= 15 V
1000
1st line
2nd line
100
10000
I
D
= 7 A
V
DS
= 7.5 V
100
V
DS
= 24 V
2
0
0
1
2
3
4
5
6
Q
g
- Total Gate Charge (nC)
2nd line
10
1st line
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
Axis Title
100
10000
0.12
Axis Title
2nd line
I
S
- Source Current (A)
T
J
= 150 °C
2nd line
R
DS(on)
- On-Resistance (Ω)
0.09
1st line
2nd line
100
10
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
2nd line
T
J
= 125 °C
10
T
J
= 25 °C
1000
1st line
2nd line
1000
0.06
1
100
0.03
T
J
= 25 °C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
2nd line
10
0
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
0.8
0.7
2nd line
V
GS(th)
(V)
10000
20
15
Power (W)
0.6
0.5
0.4
0.3
0.2
-50
-25
0
25
50
75
100 125 150
T
J
- Temperature (°C)
2nd line
10
100
1000
1st line
2nd line
10
I
D
= 250 μA
5
0
0.001
0.01
0.1
1
Pulse (s)
10
100
1000
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
S16-1004-Rev. A, 30-May-16
Document Number: 79034
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA918EDJ
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
100
Limited by R
DS(on) (1)
I
DM
limited
Vishay Siliconix
10000
2nd line
I
D
- Drain Current (A)
10
1000
1
1 ms
10 ms
100
0.1
T
A
= 25 °C
Single pulse
BVDSS limited
100 ms
1s
10 s
DC
0.01
0.1
(1)
10
1
10
100
V
DS
- Drain-to-Source Voltage (V)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
Axis Title
10
10000
8
Power Dissipation (W)
8
2nd line
I
D
- Drain Current (A)
1000
Package limited
6
1st line
2nd line
6
4
4
100
2
2
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
2nd line
10
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating
a
Note
a. The power dissipation P
D
is based on T
J
(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-1004-Rev. A, 30-May-16
Document Number: 79034
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
