PESD4V0Y1BSF
20 August 2018
Extremely low capacitance bidirectional ESD protection
diode
Product data sheet
1. General description
Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of
the TrEOS protection family. This device is housed in a DSN0603-2 (SOD962) leadless ultra small
Surface-Mounted Device (SMD) package designed to protect one signal line from the damage
caused by ESD and other transients.
2. Features and benefits
•
•
•
•
•
•
•
Bidirectional ESD protection of one line
Extremely low trigger-voltage V
t1
of 7 V TLP
Extremely low diode capacitance C
d
= 0.24 pF
Extremely low clamping voltage to protect sensitive I/Os
Extremely low-inductance protection path to ground
ESD protection up to ±15 kV according to IEC 61000-4-2
Ultra small SMD package
3. Applications
•
•
•
•
•
USB 3.2, HDMI2, and Universal Flash Storage (UFS) data lines
Cellular handsets and accessories
Portable electronics
Communication systems
Computers and peripherals
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
V
RWM
C
d
[1]
Conditions
Min
-
Typ
-
0.24
Max
4
0.29
Unit
V
pF
reverse standoff
voltage
diode capacitance
f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C
[1]
-
Guaranteed by design.
Nexperia
PESD4V0Y1BSF
Extremely low capacitance bidirectional ESD protection diode
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
2
K1
K2
cathode (diode 1)
cathode (diode 2)
1
2
Simplified outline
Graphic symbol
K1
sym045
K2
Transparent
top view
DSN0603-2
(SOD962)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PESD4V0Y1BSF
DSN0603-2
Description
silicon, leadless ultra small package; 2 terminals; 0.4 mm pitch;
0.6 x 0.3 x 0.3 mm body
Version
SOD962
7. Marking
Table 4. Marking codes
Type number
PESD4V0Y1BSF
Marking code
C5
PESD4V0Y1BSF
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
20 August 2018
2 / 15
Nexperia
PESD4V0Y1BSF
Extremely low capacitance bidirectional ESD protection diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RWM
T
amb
T
stg
V
ESD
Parameter
reverse standoff voltage
ambient temperature
storage temperature
electrostatic discharge
voltage
IEC 61000-4-2; contact discharge
IEC 61000-4-2; air discharge
[1]
[1]
Conditions
Min
-
-40
-65
-15
-15
Max
4
125
150
15
15
Unit
V
°C
°C
kV
kV
ESD maximum ratings
[1]
Device stressed with ten non-repetitive ESD pulses.
120
I
PP
(%)
80
100 % I
PP
; 8 µs
001aaa630
I
PP
100 %
90 %
e
-t
50 % I
PP
; 20 µs
40
10 %
0
0
10
20
30
t (µs)
40
t
r
= 0.6 ns to 1 ns
30 ns
60 ns
t
001aaa631
Fig. 1.
8/20 µs pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
Fig. 2.
ESD pulse waveform according to IEC
61000-4-2
PESD4V0Y1BSF
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
20 August 2018
3 / 15
Nexperia
PESD4V0Y1BSF
Extremely low capacitance bidirectional ESD protection diode
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
V
BR
I
RM
C
d
V
CL
R
dyn
f
-3dB
[1]
[2]
[3]
Conditions
I
R
= 1 mA; T
amb
= 25 °C
f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C
I
PPM
= 4 A; T
amb
= 25 °C
I
R
= 10 A; T
amb
= 25 °C
I
R
= -10 A; T
amb
= 25 °C
[1]
[2]
[3]
[3]
Min
4.2
-
-
-
-
-
-
Typ
6.2
1
0.24
3.7
0.25
0.25
19.6
Max
8
50
0.29
-
-
-
-
Unit
V
nA
pF
V
Ω
Ω
GHz
breakdown voltage
diode capacitance
clamping voltage
dynamic resistance
reverse leakage current V
RWM
= 4 V; T
amb
= 25 °C
-3 dB cut-off frequency T
amb
= 25 °C; normalized to attenuation
at 1 MHz
Guaranteed by design.
Device stressed with 8/20 µs exponential decay waveform according to IEC 61000-4-5.
Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008.
0
S
21
(dB)
-2
aaa-028416
-4
-6
-8
10
8
10
9
10
10
f (Hz)
10
11
Fig. 3.
Insertion loss; typical values
PESD4V0Y1BSF
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
20 August 2018
4 / 15
Nexperia
PESD4V0Y1BSF
Extremely low capacitance bidirectional ESD protection diode
aaa-028417
Data rate: 10 Gbit/s
Fig. 4.
USB 3.2 eye diagram, PCB with device; typical values
aaa-028418
Data rate: 10 Gbit/s
Fig. 5.
USB 3.2 eye diagram, PCB without device; typical values
PESD4V0Y1BSF
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
20 August 2018
5 / 15
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