RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
MMSZ5221B-
MMSZ5260B
SURFACE MOUNT ZENER DIODE
VOLTAGE RANGE 2.4 to 43 Volts POWER RATING 500 mWatts
FEATURES
*
*
*
*
Planar Die Construction
500mW Power Dissipation
General Purpose, Medium Current
Ldeally Suited for Automated Assembly Processes
SOD-123
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.01 gram
.112(2.84)
.100(2.54)
.071(1.80)
.055(1.40)
.028(.71)
.020(.51)
.152(3.86)
.140(3.56)
.006(.15)
.003(.08)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
.053(1.35)
.037(0.94)
.004(0.10)
.000(0.00)
REF .020(0.50)
Dimensions in inches and (millimeters)
MAXIMUM RATINGES
( @ T
A
= 25
o
C unless otherwise noted )
RATINGS
Max. Steady State Power Dissipation @T
A
=25
o
C (Note 1)
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
P
D
T
J
T
STG
VALUE
500
-65 to +150
-65 to +150
UNITS
mW
o
C
C
o
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
Thermal Resistance Junction to Ambient (Note 1)
Max. Instantaneous Forward Voltage at I
F=
10mA
SYMBOL
R
θ
JA
V
F
MIN.
-
-
TYP.
-
-
MAX.
350
0.9
UNITS
o
C/W
Volts
2006-3
Note 1. Dveice mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25 mm
2
.
ELECTRICAL CHARACTERISTICS
Zener voltage Range (Note 1)
V
Z
(V) @ I
ZT
TYPE
Nom
Volts
MMSZ5221B
MMSZ5223B
MMSZ5225B
MMSZ5226B
MMSZ5227B
MMSZ5228B
MMSZ5229B
MMSZ5230B
MMSZ5231B
MMSZ5232B
MMSZ5233B
MMSZ5234B
MMSZ5235B
MMSZ5236B
MMSZ5237B
MMSZ5238B
MMSZ5239B
MMSZ5240B
MMSZ5241B
MMSZ5242B
MMSZ5243B
MMSZ5245B
MMSZ5246B
MMSZ5248B
MMSZ5250B
MMSZ5251B
MMSZ5252B
MMSZ5254B
MMSZ5255B
MMSZ5256B
MMSZ5257B
MMSZ5258B
MMSZ5259B
MMSZ5260B
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
15
16
18
20
22
24
27
28
30
33
36
39
43
Min
Volts
2.28
2.57
2.85
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.70
5.89
6.46
7.13
7.79
8.27
8.65
9.50
10.45
11.40
12.35
14.25
15.20
17.10
19.00
20.90
22.80
25.65
26.60
28.50
31.35
34.20
37.05
40.85
Max
Volts
2.52
2.84
3.15
3.47
3.78
4.10
4.52
4.94
5.36
5.88
6.30
6.51
7.14
7.88
8.61
9.14
9.56
10.50
11.55
12.60
13.65
15.75
16.80
18.90
21.00
23.10
25.20
28.35
29.40
31.50
34.65
37.80
40.95
45.15
(@TA=25 C unless otherwise specified)
Test
Maximum Zener impedance
Z
ZT
at I
ZT
(Ω)
30
30
30
28
24
23
22
19
17
11
7
7
5
6
8
8
10
17
22
30
13
16
17
21
25
29
33
41
44
49
58
70
80
93
at
I
ZK
(mA)
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Maximum Reverse
leakage current
O
current
Z
ZK
(Ω)
1200
1300
1600
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
700
700
800
900
I
ZT
(mA)
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
8.5
7.8
7.0
6.2
5.6
5.2
5.0
4.5
4.2
3.8
3.4
3.2
3.0
I
R
(uA)
100
75
50
25
15
10
5.0
5.0
5.0
5.0
5.0
5.0
3.0
3.0
3.0
3.0
3.0
3.0
2.0
1.0
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
at V
R
(V)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
3.0
3.5
4.0
5.0
6.0
6.5
6.5
7.0
8.0
8.4
9.1
9.9
11
12
14
15
17
18
21
21
23
25
27
30
33
Note 1. Tested with pulses,Tp<1.0ms.
RECTRON
RATING AND CHARACTERISTICS CURVES ( MMBZ5221B-MMBZ5260B )
0.6
CT,TOTAL CAPACITANCE(pF)
PD,POWER DISSIPATION(W)
0.5
0.4
0.3
0.2
0.1
0
1000
T
J
= 25 C
O
100
V
R
= 1V
V
R
= 2V
10
0
25
50
75
100
O
125
150
1
10
100
Figure 1 Power Dissipation vs Ambient Temperature
1000
DYNAMIC ZENER IMPEDANCE(W)
50
40
30
20
10
0
TA,AMBIENT TEMPERATURE( C)
Figure 2 Typical Capacitance
T
J
= 25
O
C
5V6
6V8
8V2
VZ,NOMINAL ZENER VOLTAGE(V)
100
10
IZ,ZENER CURRENT(mA)
I
Z
= 1.0mA
Test Current Iz
20mA
1
1
10
VZ,NOMINAL ZENER VOLTAGE(V)
100
0
1
2
3
4
5
6
7
8
9
10
Figure 3 Zener Voltage vs Zener Impedence
30
TJ = 25
O
C
VZ,ZENER VOLTAGE(V)
Figure 4 Zener Breakdown Characteristics
100
90
80
70
60
50
40
30
20
10
0
0
20
40
t, TIME ( s)
12
15
Nominal Zener Voltage
18
22
27
% OF PEAK PULSE CURRENT
10
t
r
PEAK VALUE I
RSM
@ 8 s
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 s
HALF VALUE I
RSM
/2 @ 20 s
IZ,ZENER CURRENT(mA)
20
Test Current Iz
10
33
36 39
t
P
0
0
10
20
VZ,ZENER VOLTAGE(V)
30
40
60
80
Figure 5 Zener Breakdown Characteristics
Figure 6. 8× 20 s Pulse Waveform
RECTRON
DISCLAIMER NOTICE
Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-
lity for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" paramet-
ers which may be included on RECTRON data sheets and/ or specifications ca-
n and do vary in different applications and actual performance may vary over ti-
me. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
Rectron products are not designed, intended or authorized for use in medical,
life-saving implant or other applications intended for life-sustaining or other rela-
ted applications where a failure or malfunction of component or circuitry may di-
rectly or indirectly cause injury or threaten a life without expressed written appr-
oval of Rectron Inc. Customers using or selling Rectron components for use in
such applications do so at their own risk and shall agree to fully indemnify Rect-
ron Inc and its subsidiaries harmless against all claims, damages and expendit-
ures.
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