f
LJ
nc.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Standard tatoranoM are 5%
20%, iOK,2%andl%areavtfable
400 mW low voltage avalanche
low noise silicon zener diodes
FEATURES
Controlled avalanche
Voltages fropm 4.3 to 1 0 V
Low reverse leakage
Low noise
Hermetically sealed glass package
APD can select any voltage in
tolerances 1%, 2%, 5% and 10%
at your application's test current.
MAXIMUM RATINGS
• Junction Temperature -65°C to f175°C
.aoo"c
• Storage Temperature -65*0 to H
• DC Power Dissipation: 400mW i
9\m
50"C
• Derate above 50*0: 2.67mW/°C
MECHANICAL
CHARACTERISTICS
-r*
MH-MW
tS^otr,
I .,
P-
i
,
L
T^
ur~
1
rtiamfian „..__..
(<1MIU """
*- MB"
1
ELECTRICAL CHARACTERISTICS @ 25
e
C
I
Maximum
•an MA
»
1N6062B
1N6083B
1N60S4B
iNBOeSB
INSOSSB
1N6087B
1N60SSB
1N80B9B
NoiniMl
ZMMT
Vde
43
4.7
S.1
54
6.2
64
7.5
8.2
B.1
10.0
Itad
mm
Hi***
me* (9
2,
I
O
Utarimun
ltowwU*k*B*
I .
*
V*
HA
1.5
2.0
2.0
2.0
3.0
2.0
4.5
05
54
6.2
0.05
0.01
0.01
MrtminHifiiMMi
4V,
Vde
0.75
0.50
FIOURC1
*Hdl
knwKlonsbiJllBl
fflA
jiVVS"
tNeoeoB
1N6091B
16
10
10
40
45
SO
SO
60
60
60
20
10
5
1
1
1
1
1
1
1
I
mA
2.0
1.0
0.25
nun
030
0.10
0.10
0.10
0.10
0.10
0.10
0.10
045
041
0.01
7.5
9.1
2
2
041
0.01
041
0.01
041
CASE: Hemetlcally sealed
glass packagi»(DO-35)
FINISH: Corros on resistant
Leads are tin
THERMAL RES ISTANCE
200"C/Wjunc tiontoleadat
0.375-inches from body,
POLARITY: Cathode banded.
WEIGHT: 0.2 g •«ms(typ).
ThU MTltt also Mutt* In DO-7 p*cK«o*.
Contutt itewy for miNtblliy.
Net* 1 Th« JEDEC type number* shown with a B suffix hw« a ±5% toterano*.
Stoiuffalf>dic«to»a±20%toteranc«. SutfixAdenotwatlCHitotemnc*. suffix
C denoiM • ±2% totoranea and sufRx D denout *1% totoranoe.
Nol* 2 The zenar impedanoe is derived from tr» 60 Hz ae voltage, which rasuKs
when an ac cunvnt having an mra vakw aqual to 10% of the DC zenar current
(y It superimposad on
^
Not* 3 Measured from 1 KHz to 3 KHz in noise density measurement circuit
shown on the fotcmring page.
1
s
V
1
»*
K
s
1
.
1
1
i
1
~l
s
s,
^
s,
X
i\
»
n
*
IB'
T
fc
. UK winM (*C(
M-tniMr
Ftgura 2 POWER DERATING
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
电子竞赛
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
