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PEMIxCSP family
Integrated 4-, 6- and 8-channel passive filter network with
ESD protection
Rev. 2 — 27 January 2012
Product data sheet
1. Product profile
1.1 General description
The devices are a family of 4-, 6- and 8-channel RC low pass filters which are designed to
provide filtering of undesired RF signals on the I/O ports of portable communication or
computing devices. In addition the devices incorporate diodes to provide protection to
downstream components from ElectroStatic Discharge (ESD) voltages up to
20
kV.
The PEMIxCSP family is fabricated using monolithic silicon technology and integrates
up to eight resistors and 16 protection diodes in a single Wafer Level Chip-Size
Package (WLCSP).
These features make the devices ideal for use in applications requiring the utmost in
miniaturization such as mobile phone handsets, cordless telephones and personal digital
devices.
1.2 Features and benefits
Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen
and antimony (Dark Green compliant)
Integrated 4-, 6- and 8-channel
-type
RC filter network
Channel series resistance R
s(ch)
= 100
Channel capacitance C
ch
= 23 or 30 pF at V
bias(DC)
= 2.5 V
Channel capacitance C
ch
= 41 or 54 pF at V
bias(DC)
= 0 V
Available in 10, 15 and 20-ball WLCSP
ESD protection up to
20
kV contact discharge according to IEC 61000-4-2,
far exceeding level 4
1.3 Applications
General-purpose ElectroMagnetic Interference (EMI) and Radio-Frequency
Interference (RFI) filtering and downstream ESD protection for:
Cellular phone and Personal Communication Systems (PCS) mobile handsets
Cordless telephones
Wireless data (WAN/LAN) systems
NXP Semiconductors
PEMIxCSP family
4-, 6- and 8-channel passive filter network with ESD protection
2. Pinning information
2.1 Pinning
bump A1
index area
1
A
B
C
001aak062
bump A1
index area
2
3
4
A
B1
B2
B
C
001aak063
1
2
3
4
5
6
B1
B2
B3
transparent top view,
solder balls facing down
transparent top view,
solder balls facing down
Fig 1.
PEMI4CSP: pin configuration
bump A1
index area
1
A
B
C
B1
B2
2
3
Fig 2.
PEMI6CSP: pin configuration
4
5
6
7
8
B3
B4
001aak064
transparent top view,
solder balls facing down
Fig 3.
PEMI8CSP: pin configuration
2.2 Pin description
Table 1.
Pin
PEMI4CSP
A1 and C1
A2 and C2
A3 and C3
A4 and C4
-
-
-
-
B1 and B2
PEMI6CSP
A1 and C1
A2 and C2
A3 and C3
A4 and C4
A5 and C5
A6 and C6
-
-
B1, B2 and B3
PEMI8CSP
A1 and C1
A2 and C2
A3 and C3
A4 and C4
A5 and C5
A6 and C6
A7 and C7
A8 and C8
B1, B2, B3 and B4
filter channel 1
filter channel 2
filter channel 3
filter channel 4
filter channel 5
filter channel 6
filter channel 7
filter channel 8
ground (GND)
Pinning
Description
PEMIXCSP_FAM
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 27 January 2012
2 of 16
NXP Semiconductors
PEMIxCSP family
4-, 6- and 8-channel passive filter network with ESD protection
3. Ordering information
Table 2.
Ordering information
Package
Name
PEMI4CSP/RT
PEMI4CSP/RW
PEMI6CSP/RT
PEMI6CSP/RW
PEMI8CSP/RT/P
Description
Version
PEMI4CSP/RT
PEMI4CSP/RW
PEMI6CSP/RT
PEMI6CSP/RW
PEMI8CSP/RT/P
PEMI8CSP/RW/P
WLCSP10 wafer level chip-size package; 10 bumps; 1.56
1.05
0.61 mm
WLCSP10 wafer level chip-size package; 10 bumps; 1.56
1.05
0.61 mm
WLCSP15 wafer level chip-size package; 15 bumps; 2.36
1.05
0.61 mm
WLCSP15 wafer level chip-size package; 15 bumps; 2.36
1.05
0.61 mm
WLCSP20 wafer level chip-size package; 20 bumps; 3.16
1.05
0.61 mm
Type number
PEMI8CSP/RW/P WLCSP20 wafer level chip-size package; 20 bumps; 3.16
1.05
0.61 mm
4. Functional diagram
Rs(ch)
Rs(ch)
A1 to A4
Cch
2
Cch
2
C1 to C4
A1 to A6
Cch
2
Cch
2
C1 to C6
GND
018aaa077
GND
018aaa078
Fig 4.
PEMI4CSP: schematic diagram
Fig 5.
Rs(ch)
PEMI6CSP: schematic diagram
A1 to A8
Cch
2
Cch
2
C1 to C8
GND
018aaa079
Fig 6.
PEMI8CSP: schematic diagram
PEMIXCSP_FAM
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 27 January 2012
3 of 16
NXP Semiconductors
PEMIxCSP family
4-, 6- and 8-channel passive filter network with ESD protection
5. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CC
V
ESD
Parameter
supply voltage
electrostatic discharge
voltage
all pins to ground
contact discharge
air discharge
IEC 61000-4-2, level 4
all pins to ground
contact discharge
air discharge
I
ch
P
ch
P
tot
T
stg
T
amb
[1]
[1]
Conditions
Min
0.5
-
-
Max
+5.6
20
30
Unit
V
kV
kV
-
-
-
-
-
55
40
8
15
33
60
250
+150
+85
kV
kV
mA
mW
mW
C
C
channel current (DC)
T
amb
= 70
C
channel power dissipation continuous power;
T
amb
= 70
C
total power dissipation
storage temperature
ambient temperature
continuous power;
T
amb
= 70
C
Device is qualified with 1000 pulses of
15
kV contact discharges each, according to the IEC 61000-4-2
model and far exceeds the specified level 4 (8 kV contact discharge).
6. Characteristics
Table 4.
Channel characteristics
T
amb
= 25
C; unless otherwise specified.
Symbol Parameter
R
s(ch)
C
ch
channel series resistance
channel capacitance
PEMIxCSP/RT
PEMIxCSP/RW
V
BR
V
F
I
LR
R
dyn
breakdown voltage
forward voltage
reverse leakage current
dynamic resistance
for the total channel;
f = 100 kHz
V
bias(DC)
= 0 V
V
bias(DC)
= 2.5 V
V
bias(DC)
= 0 V
V
bias(DC)
= 2.5 V
positive clamp; I
I
= 1 mA
negative clamp; I
F
= 1 mA
per channel; V
I
= 3.5 V
I=1A
positive transient
negative transient
[1]
[2]
Guaranteed by design.
According to IEC 61000-4-5 and IEC 61000-4-9.
[2]
[1]
Conditions
Min
80
Typ
100
Max
120
Unit
33
-
43
-
5.8
1.5
-
-
-
41
23
54
30
-
-
-
0.3
0.85
49
-
65
-
9
0.4
0.1
-
-
pF
pF
pF
pF
V
V
A
PEMIXCSP_FAM
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 27 January 2012
4 of 16