1GB, 2GB, 4GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMM
Features
DDR2 SDRAM RDIMM
MT18HTF12872PZ – 1GB
MT18HTF25672PZ – 2GB
MT18HTF51272PZ – 4GB
Features
•
240-pin, registered dual in-line memory module
•
Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, or PC2-6400
•
1GB (128 Meg x 72), 2GB (256 Meg x 72), 4GB (512
Meg x72)
•
Supports ECC error detection and correction
•
V
DD
= V
DDQ
= +1.8V
•
V
DDSPD
= 1.7–3.6V
•
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
•
Differential data strobe (DQS, DQS#) option
•
4n-bit prefetch architecture
•
Single rank
•
Multiple internal device banks for concurrent
operation
•
Programmable CAS# latency (CL)
•
Posted CAS# additive latency (AL)
•
WRITE latency = READ latency - 1
t
CK
•
Programmable burst lengths (BL): 4 or 8
•
Adjustable data-output drive strength
•
64ms, 8192-cycle refresh
•
On-die termination (ODT)
•
Serial presence-detect (SPD) with EEPROM
•
Gold edge contacts
•
Halogen-free
Table 1: Key Timing Parameters
Speed
Grade
-80E
-800
-667
-53E
-40E
Industry
Nomenclature
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
Data Rate (MT/s)
CL = 6
800
800
–
–
–
CL = 5
800
667
667
–
–
CL = 4
533
533
553
553
400
CL = 3
400
400
400
400
400
t
RCD
t
RP
t
RC
Figure 1: 240-Pin RDIMM (MO-237 R/C H)
Module height: 30mm (1.181in)
Options
•
Parity
•
Operating temperature
–
Commercial (0°C
≤
T
C
≤
+85°C)
–
Industrial (–40°C
≤
T
A
≤
+85°C)
1
•
Package
–
240-pin DIMM (halogen-free)
•
Frequency/CL
2
–
2.5ns @ CL = 5 (DDR2-800)
–
2.5ns @ CL = 6 (DDR2-800)
–
3.0ns @ CL = 5 (DDR2-667)
Notes:
Marking
P
None
I
Z
-80E
-800
-667
1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency; registered mode
will add one clock cycle to CL.
(ns)
12.5
15
15
15
15
(ns)
12.5
15
15
15
15
(ns)
55
55
55
55
55
PDF: 09005aef83dadad1
htf18c128_256_512x72pz - Rev. C 1/11 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2010 Micron Technology, Inc. All rights reserved.
1GB, 2GB, 4GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMM
Features
Table 2: Addressing
Parameter
Refresh count
Row address
Device bank address
Device configuration
Column address
Module rank address
1GB
8K
16K A[13:0]
4 BA[1:0]
512Mb (128 Meg x 4)
2K A[11, 9:0]
1 S0#
2GB
8K
16K A[13:0]
8 BA[2:0]
1Gb (256 Meg x 4)
2K A[11, 9:0]
1 S0#
4GB
8K
32K A[14:0]
8 BA[2:0]
2Gb (512 Meg x 4)
2K A[11, 9:0]
1 S0#
Table 3: Part Numbers and Timing Parameters – 1GB
Base device: MT47H128M4,
1
512Mb DDR2 SDRAM
Module
2
Part Number
Density
Configuration
MT18HTF12872P(I)Z-80E__
MT18HTF12872P(I)Z-800__
MT18HTF12872P(I)Z-667__
1GB
1GB
1GB
128 Meg x 72
128 Meg x 72
128 Meg x 72
Module
Bandwidth
6.4 GB/s
6.4 GB/s
5.3 GB/s
Memory Clock/
Data Rate
2.5ns/800 MT/s
2.5ns/800 MT/s
3.0ns/800 MT/s
Clock Cycles
(CL-
t
RCD-
t
RP)
5-5-5
6-6-6
5-5-5
Table 4: Part Numbers and Timing Parameters – 2GB
Base device: MT47H256M4,
1
1Gb DDR2 SDRAM
Module
2
Part Number
Density
Configuration
MT18HTF25672P(I)Z-80E__
MT18HTF25672P(I)Z-800__
MT18HTF25672P(I)Z-667__
2GB
2GB
2GB
256 Meg x 72
256 Meg x 72
256 Meg x 72
Module
Bandwidth
6.4 GB/s
6.4 GB/s
5.3 GB/s
Memory Clock/
Data Rate
2.5ns/800 MT/s
2.5ns/800 MT/s
3.0ns/800 MT/s
Clock Cycles
(CL-
t
RCD-
t
RP)
5-5-5
6-6-6
5-5-5
Table 5: Part Numbers and Timing Parameters – 4GB
Base device: MT47H512M4,
1
2Gb DDR2 SDRAM
Module
Part Number
2
Density
Configuration
MT18HTF51272P(I)Z-80E__
MT18HTF51272P(I)Z-800__
MT18HTF51272P(I)Z-667__
Notes:
4GB
4GB
4GB
512 Meg x 72
512 Meg x 72
512 Meg x 72
Module
Bandwidth
6.4 GB/s
6.4 GB/s
5.3 GB/s
Memory Clock/
Data Rate
2.5ns/800 MT/s
2.5ns/800 MT/s
3.0ns/800 MT/s
Clock Cycles
(CL-
t
RCD-
t
RP)
5-5-5
6-6-6
5-5-5
1. Data sheets for the base device can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con-
sult factory for current revision codes. Example: MT18HTF25672PZ-667H1.
PDF: 09005aef83dadad1
htf18c128_256_512x72pz - Rev. C 1/11 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2010 Micron Technology, Inc. All rights reserved.
1GB, 2GB, 4GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMM
Pin Assignments
Pin Assignments
Table 6: Pin Assignments
240-Pin RDIMM Front
Pin Symbol Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
V
REF
V
SS
DQ0
DQ1
V
SS
DQS0#
DQS0
V
SS
DQ2
DQ3
V
SS
DQ8
DQ9
V
SS
DQS1#
DQS1
V
SS
RESET#
NC
V
SS
DQ10
DQ11
V
SS
DQ16
DQ17
V
SS
DQS2#
DQS2
V
SS
DQ18
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
Symbol
DQ19
V
SS
DQ24
DQ25
V
SS
DQS3#
DQS3
V
SS
DQ26
DQ27
V
SS
CB0
CB1
V
SS
DQS8#
DQS8
V
SS
CB2
CB3
V
SS
V
DDQ
CKE0
V
DD
BA2
Err_Out
V
DDQ
A11
A7
V
DD
A5
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
A4
V
DDQ
A2
V
DD
V
SS
V
SS
V
DD
Par_In
V
DD
A10/AP
BA0
V
DDQ
WE#
CAS#
V
DDQ
NC
NC
V
DDQ
V
SS
DQ32
DQ33
V
SS
DQS4#
DQS4
V
SS
DQ34
DQ35
V
SS
DQ40
DQ41
91
92
93
94
95
96
97
98
99
100
101
102
103
105
106
107
108
109
110
111
112
114
115
116
117
118
119
120
V
SS
DQS5#
DQS5
V
SS
DQ42
DQ43
V
SS
DQ48
DQ49
V
SS
SA2
NC
V
SS
DQS6
V
SS
DQ50
DQ51
V
SS
DQ56
DQ57
V
SS
DQS7
V
SS
DQ58
DQ59
V
SS
SDA
SCL
121
122
123
124
125
126
127
128
129
130
131
132
133
134
136
137
138
139
140
141
142
143
144
145
146
148
149
150
V
SS
DQ4
DQ5
V
SS
DQS9
DQS9#
V
SS
DQ6
DQ7
V
SS
DQ12
DQ13
V
SS
DQS10
V
SS
NC
NC
V
SS
DQ14
DQ15
V
SS
DQ20
DQ21
V
SS
DQS11
V
SS
DQ22
DQ23
240-Pin RDIMM Back
151
152
153
154
155
157
158
159
160
161
162
163
164
166
167
168
169
170
171
172
173
174
175
176
178
179
180
V
SS
DQ28
DQ29
V
SS
DQS12
V
SS
DQ30
DQ31
V
SS
CB4
CB5
V
SS
DQS17
V
SS
CB6
CB7
V
SS
V
DDQ
NC
V
DD
A15
A14
V
DDQ
A12
A9
V
DD
A8
A6
181
182
183
184
185
187
188
189
190
191
192
193
194
196
197
198
199
200
201
202
204
205
206
207
208
209
210
V
DDQ
A3
A1
V
DD
CK0
CK0#
V
DD
A0
V
DD
BA1
V
DDQ
RAS#
S0#
V
DDQ
ODT0
A13
V
DD
V
SS
DQ36
DQ37
V
SS
DQS13
V
SS
DQ38
DQ39
V
SS
DQ44
DQ45
V
SS
211
213
214
215
216
217
218
219
220
221
222
223
225
226
227
228
229
230
231
232
234
235
236
237
238
239
240
DQS14
V
SS
DQ46
DQ47
V
SS
DQ52
DQ53
V
SS
NC
NC
V
SS
DQS15
V
SS
DQ54
DQ55
V
SS
DQ60
DQ61
V
SS
DQS16
V
SS
DQ62
DQ63
V
SS
V
DDSPD
SA0
SA1
Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol
212 DQS14#
156 DQS12# 186
104 DQS6#
224 DQS15#
135 DQS10# 165 DQS17# 195
113 DQS7#
203 DQS13# 233 DQS16#
147 DQS11# 177
PDF: 09005aef83dadad1
htf18c128_256_512x72pz - Rev. C 1/11 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2010 Micron Technology, Inc. All rights reserved.
1GB, 2GB, 4GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMM
Pin Descriptions
Pin Descriptions
The pin description table below is a comprehensive list of all possible pins for all DDR2
modules. All pins listed may not be supported on this module. See Pin Assignments for
information specific to this module.
Table 7: Pin Descriptions
Symbol
Ax
Type
Input
Description
Address inputs:
Provide the row address for ACTIVE commands, and the column ad-
dress and auto precharge bit (A10) for READ/WRITE commands, to select one location
out of the memory array in the respective bank. A10 sampled during a PRECHARGE
command determines whether the PRECHARGE applies to one bank (A10 LOW, bank
selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code
during a LOAD MODE command. See the Pin Assignments Table for density-specific
addressing information.
Bank address inputs:
Define the device bank to which an ACTIVE, READ, WRITE, or
PRECHARGE command is being applied. BA define which mode register (MR0, MR1,
MR2, and MR3) is loaded during the LOAD MODE command.
Clock:
Differential clock inputs. All control, command, and address input signals are
sampled on the crossing of the positive edge of CK and the negative edge of CK#.
Clock enable:
Enables (registered HIGH) and disables (registered LOW) internal circui-
try and clocks on the DDR2 SDRAM.
Data mask (x8 devices only):
DM is an input mask signal for write data. Input data
is masked when DM is sampled HIGH, along with that input data, during a write ac-
cess. Although DM pins are input-only, DM loading is designed to match that of the
DQ and DQS pins.
On-die termination:
Enables (registered HIGH) and disables (registered LOW) termi-
nation resistance internal to the DDR2 SDRAM. When enabled in normal operation,
ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input
will be ignored if disabled via the LOAD MODE command.
Parity input:
Parity bit for Ax, RAS#, CAS#, and WE#.
Command inputs:
RAS#, CAS#, and WE# (along with S#) define the command being
entered.
Reset:
Asynchronously forces all registered outputs LOW when RESET# is LOW. This
signal can be used during power-up to ensure that CKE is LOW and DQ are High-Z.
Chip select:
Enables (registered LOW) and disables (registered HIGH) the command
decoder.
Serial address inputs:
Used to configure the SPD EEPROM address range on the I
2
C
bus.
Serial clock for SPD EEPROM:
Used to synchronize communication to and from the
SPD EEPROM on the I
2
C bus.
Check bits.
Used for system error detection and correction.
Data input/output:
Bidirectional data bus.
Data strobe:
Travels with the DQ and is used to capture DQ at the DRAM or the con-
troller. Output with read data; input with write data for source synchronous opera-
tion. DQS# is only used when differential data strobe mode is enabled via the LOAD
MODE command.
BAx
Input
CKx,
CK#x
CKEx
DMx
Input
Input
Input
ODTx
Input
Par_In
RAS#, CAS#, WE#
RESET#
S#x
SAx
SCL
CBx
DQx
DQSx,
DQS#x
Input
Input
Input
Input
Input
Input
I/O
I/O
I/O
PDF: 09005aef83dadad1
htf18c128_256_512x72pz - Rev. C 1/11 EN
4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2010 Micron Technology, Inc. All rights reserved.
1GB, 2GB, 4GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMM
Pin Descriptions
Table 7: Pin Descriptions (Continued)
Symbol
SDA
RDQSx,
RDQS#x
Type
I/O
Output
Description
Serial data:
Used to transfer addresses and data into and out of the SPD EEPROM on
the I
2
C bus.
Redundant data strobe (x8 devices only):
RDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When RDQS is enabled, RDQS
is output with read data only and is ignored during write data. When RDQS is disa-
bled, RDQS becomes data mask (see DMx). RDQS# is only used when RDQS is enabled
and differential data strobe mode is enabled.
Err_Out#
V
DD
/V
DDQ
V
DDSPD
V
REF
V
SS
NC
NF
NU
RFU
Output
Parity error output:
Parity error found on the command and address bus.
(open drain)
Supply
Supply
Supply
Supply
–
–
–
–
Power supply:
1.8V ±0.1V. The component V
DD
and V
DDQ
are connected to the mod-
ule V
DD
.
SPD EEPROM power supply:
1.7–3.6V.
Reference voltage:
V
DD
/2.
Ground.
No connect:
These pins are not connected on the module.
No function:
These pins are connected within the module, but provide no functionality.
Not used:
These pins are not used in specific module configurations/operations.
Reserved for future use.
PDF: 09005aef83dadad1
htf18c128_256_512x72pz - Rev. C 1/11 EN
5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2010 Micron Technology, Inc. All rights reserved.
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