TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
65 kW Transient Voltage Suppressor
- High Reliability controlled devices
- Thru hole mounting
- Unidirectional (A) and Bidirectional (CA) construction
- Selections for 48 V to 75 V standoff voltages (V
WM
)
LEVELS
M, MA, MX, MXL
DEVICES
MRT65KP48A thru MRT65KP75CA, e3
FEATURES
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Suppresses transients up to 65 kW @ 6.4/69 µs
Fast response with less than 5ns turn-on time
Preferred 65kW TVS for aircraft power bus protection
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes
specify various screening and conformance inspection options based on MIL-PRF-19500.
Refer to
MicroNote 129
for more details on the screening options.
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS Compliant devices available by adding “e3” suffix
3σ lot norm screening performed on Standby Current I
D
CASE 5A
APPLICATIONS / BENEFITS
Pin injection protection per RTCA/DO-160F up to Level 5 for Waveform 4 (6.4/69 µs) and up
o
to Level 3 for Waveform 5A (40/120 s) at 70 C
Compatible with “abnormal surge voltage (dc)” in 16.6.2.4 (Category A, B, and Z) of
RTCA/DO-160F
The MRT65KP48A is designed for Category A in protecting 80 V components**
The MRT65KP54A or 60A is designed for Category B in protecting 90 V or 100 V
components**
The MRT65KP75A is designed for Category Z in protecting 125 V components**
** including switching transistors, MOSFETS & IGBTs in offline switching power supplies
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25 °C: 65 kW at @ 6.4/69 µs per waveform in Figure 8
(derate per Figure 2) with impulse repetition rate (duty factor) of 0.01 % max
Operating and Storage temperature: -55 °C to +150 °C
Steady-state power dissipation: 7 W @ TL = 25 °C
Temperature coefficient of voltage: +0.100 %/°C max
Solder temperatures: 260 °C for 10 s (maximum)
RF01015 Rev A, October 2010
High Reliability Product Group
Page 1 of 5
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
MECHANICAL AND PACKAGING
Void-free transfer molded thermosetting epoxy body meeting UL94V-0 requirements
Tin-Lead (90 % Sn, 10 % Pb) or RoHS (100% Sn) Compliant annealed matte-Tin plating readily solderable per MIL-
STD-750, method 2026
Body marked with part number
Cathode indicated by band. No cathode band on bi-directional devices
Available in bulk or custom tape-and-reel packaging
TAPE-AND-REEL standard per EIA-296 (add “TR” suffix to part number)
Weight: 1.6 grams (approximate)
PACKAGE DIMENSIONS
NOTE:
Cathode indicated by band
All dimensions in inches
millimeters
Case 5A
SYMBOLS & DEFINITIONS
Symbol
V
WM
P
PP
V
BR
I
D
Definition
Working Peak (Standoff) Voltage
Peak Pulse Power
Breakdown Voltage
Standby Current
Symbol
I
PP
V
C
Definition
Peak Pulse Current
Clamping Voltage
Breakdown Current for V
BR
I
BR
RF01015 Rev A, October 2010
High Reliability Product Group
Page 2 of 5
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
ELECTRICAL CHARACTERISTICS @ 25
o
C
MICROSEMI PART
NUMBER
(replace A suffix with
CA for bidirectional)
Working
Standoff
Voltage
V
WM
V max
Maximum
Standby
Current
I
D
@ V
WM
A
Minimum
Breakdown
Voltage
V
BR
@ I
BR
V
Peak Pulse
Current
I
PP
@ 6.4/69 s
(Note 2)
A
Breakdown
Current
I
BR
mA
Maximum
Clamping Voltage
V
C
@ I
PP
(Note 1)
V
MRT65KP48A
MRT65KP54A
MRT65KP60A
MRT65KP75A
48
54
60
75
5
5
5
5
53.3
60.0
66.7
83.3
5
5
5
5
77.7
87.5
97.3
122
836
742
668
533
GRAPHS
P
PP
Peak Pulse Power vs. Pulse Time – kW
Non-Repetitive Pulse
NOTE: This P
PP
versus time graph allows the
designer to use these parts over a broad power
spectrum using the guidelines illustrated in App
Note 104 on Microsemi’s website. Aircraft
transients are described with exponential
decaying waveforms. For suppression of
square-wave impulses, derate power and current
to 66% of that for exponential decay as shown in
Figure 1.
tp – Pulse Time – sec.
FIGURE 1
Peak Pulse Power vs. Pulse Time
To 50% of Exponentially Decaying Pulse
Peak Pulse Power (P
PP
) or continuous
Power in % of 25
o
C
rating
T
L
Lead Temperature
o
C
FIGURE 2
POWER DERATING
RF01015 Rev A, October 2010
High Reliability Product Group
Page 3 of 5
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
GRAPHS Contd.
Correct
INSTALLATION
TVS devices used across power
lines are subject to relatively high
magnitude surge currents and are
more prone to adverse parasitic
inductance effects in the mounting
leads. Minimizing the shunt path of
the lead inductance and their V= -
Ldi/dt effects will optimize the TVS
effectiveness.
Examples
of
optimum installation and poor
installation are illustrated in figures
3 through figure 6.
Figure 3
illustrates
minimal
parasitic
inductance with attachment at end
of device. Inductive voltage drop is
across input leads. Virtually no
“overshoot” voltage results as
illustrated with figure 4. The loss of
effectiveness in protection caused
by excessive parasitic inductance is
illustrated in figures 5 and 6. Also
see MicroNote 111 for further
information on “Parasitic Lead
Inductance in TVS”.
Wrong
FIGURE 3
FIGURE 5
FIGURE 4
FIGURE 6
t – time
Note: frequency is 1MHz
t – time
t – Time
FIGURE 7 –
Waveform 3
FIGURE 8 –
Waveform 4
FIGURE 9 –
Waveform 5A
NOTE: The 1MHz damped oscillatory waveform (3) has an effective pulse width of 4 s. Equivalent peak pulse power at each of
the pulse widths represented in RTCA/DO-160E for waveforms 3, 4 and 5A (above) have been determined referencing Figure 1
herein as well as Application Notes 104 and 120 (found on Microsemi’s website) and are listed below.
RF01015 Rev A, October 2010
High Reliability Product Group
Page 4 of 5
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
GRAPHS Contd.
WAVEFORM NUMBER
3
4
5A
PULSE WIDTH ( s)
4
6.4/69
40/120
PEAK PULSE POWER (kW )
290
65
49
Note: High current fast rise-time transients of 250 ns or less can more than triple the V
C
from parasitic inductance effects (V= -
Ldi/dt) compared to the clamping voltage shown in the Electrical Characteristics as also described in Figures 5 and 6 herein.
RF01015 Rev A, October 2010
High Reliability Product Group
Page 5 of 5
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