74VHCV07FT
CMOS Digital Integrated Circuits Silicon Monolithic
74VHCV07FT
1. Functional Description
•
Hex Schmitt Buffer (Open Drain)
2. General
The 74VHCV07FT is an advanced high speed CMOS BUFFER fabricated with silicon gate CMOS technology.
It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS
low power dissipation.
Output have high performance MOS N-channel transistor. (OPEN-DRAIN outputs)
Input pin have hysteresis between the positive-going and negative-going thresholds. Thus the 74VHCV07FT is
capable of squaring up transitions of slowly changing input signals such as line receivers.
Input protection and output circuit ensure that 0 to 5.5 V can be applied to the input and output pins without
regard to the supply voltage. These structure prevents device destruction due to mismatched supply and input/
output voltages such as battery back up, etc.
3. Features
(1)
(2)
(3)
(4)
(5)
(6)
(7)
AEC-Q100 (Rev. H) (Note 1)
Wide operating temperature range: T
opr
= -40 to 125
High speed: t
pd
= 3.8 ns (typ.) at V
CC
= 5.0 V
Low power dissipation: I
CC
= 2.0
µA
(max) at T
a
= 25
Wide operating voltage range: V
CC(opr)
= 1.8 V to 5.5 V
Output current: I
OL
= 16 mA (min)(V
CC
= 4.5 V)
Power-down protection is provided on all inputs and outputs.
(8) Pin and function compatible with the 74 series (74AC/HC/AHC/LV etc.) 07 type.
Note 1: This device is compliant with the reliability requirements of AEC-Q100. For details, contact your Toshiba sales
representative.
4. Packaging
TSSOP14B
Start of commercial production
©2016 Toshiba Corporation
1
2014-11
2016-08-04
Rev.2.0
74VHCV07FT
5. Pin Assignment
6. Marking
7. Truth Table
A
L
H
Y
L
Z
8. System Diagram (per gate)
©2016 Toshiba Corporation
2
2016-08-04
Rev.2.0
74VHCV07FT
9. Absolute Maximum Ratings (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Input diode current
Output diode current
Output current
Power dissipation
V
CC
/ground current
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
P
D
I
CC
/I
GND
T
stg
(Note 3)
(Note 2)
(Note 1)
Note
Rating
-0.5 to 7.0
-0.5 to 7.0
-0.5 to 7.0
-50
-50
50
180
±100
-65 to 150
Unit
V
V
V
mA
mA
mA
mW
mA
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Output in off state. I
OUT
absolute maximum rating must be observed.(Output in low state)
Note 2: V
OUT
< GND
Note 3: 180 mW in the range of T
a
= -40 to 85
.
From T
a
= 85 to 125
a derating factor of -3.25 mW/ shall be
applied until 50 mW.
10. Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall times
Symbol
V
CC
V
IN
V
OUT
T
opr
dt/dv
Test Condition
V
CC
= 3.3
±
0.3 V
V
CC
= 5.0
±
0.5 V
Rating
1.8 to 5.5
0 to 5.5
0 to 5.5
-40 to 125
0 to 20
0 to 1
Unit
V
V
V
ms/V
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either V
CC
or GND.
©2016 Toshiba Corporation
3
2016-08-04
Rev.2.0
74VHCV07FT
11. Electrical Characteristics
11.1. DC Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Positive threshold voltage
Symbol
V
P
Test Condition
V
CC
(V)
1.8
2.3
3.0
4.5
5.5
Negative threshold voltage
V
N
1.8
2.3
3.0
4.5
5.5
Hysteresis voltage
V
H
1.8
2.3
3.0
4.5
5.5
Low-level output voltage
V
OL
V
IN
= V
IL
I
OL
= 50
µA
1.8
3.0
4.5
I
OL
= 8 mA
I
OL
= 16 mA
3-state output OFF-state
leakage current
Power-OFF leakage current
Input leakage current
Quiescent supply current
I
OZ
I
OFF
I
IN
I
CC
V
IN
= V
IH
V
OUT
= 0 to 5.5 V
V
IN
/V
OUT
= 5.5 V
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
3.0
4.5
1.8 to 5.5
0
0 to 5.5
5.5
Min
0.15
0.45
0.90
1.35
1.65
0.15
0.20
0.30
0.40
0.50
Typ.
0.0
0.0
0.0
Max
1.65
1.85
2.20
3.15
3.85
1.05
1.10
1.20
1.40
1.60
0.1
0.1
0.1
0.36
0.44
±0.25
0.5
±0.1
2.0
µA
µA
µA
µA
V
V
V
Unit
V
©2016 Toshiba Corporation
4
2016-08-04
Rev.2.0
74VHCV07FT
11.2. DC Characteristics (Unless otherwise specified, T
a
= -40 to 85
)
Characteristics
Positive threshold voltage
Symbol
V
P
Test Condition
V
CC
(V)
1.8
2.3
3.0
4.5
5.5
Negative threshold voltage
V
N
1.8
2.3
3.0
4.5
5.5
Hysteresis voltage
V
H
1.8
2.3
3.0
4.5
5.5
Low-level output voltage
V
OL
V
IN
= V
IL
I
OL
= 50
µA
1.8
3.0
4.5
I
OL
= 8 mA
I
OL
= 16 mA
3-state output OFF-state leakage
current
Power-OFF leakage current
Input leakage current
Quiescent supply current
I
OZ
I
OFF
I
IN
I
CC
V
IN
= V
IH
V
OUT
= 0 to 5.5 V
V
IN
/V
OUT
= 5.5 V
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
3.0
4.5
1.8 to 5.5
0
0 to 5.5
5.5
Min
0.15
0.45
0.90
1.35
1.65
0.15
0.20
0.30
0.40
0.50
Max
1.65
1.85
2.20
3.15
3.85
1.05
1.10
1.20
1.40
1.60
0.1
0.1
0.1
0.44
0.55
±2.5
5.0
±1.0
20.0
µA
µA
µA
µA
V
V
V
Unit
V
©2016 Toshiba Corporation
5
2016-08-04
Rev.2.0
电源技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
