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HN2S03FUTE85LF

产品描述DIODE ARRAY SCHOTTKY 20V US6
产品类别半导体    分立半导体   
文件大小205KB,共3页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
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HN2S03FUTE85LF概述

DIODE ARRAY SCHOTTKY 20V US6

HN2S03FUTE85LF规格参数

参数名称属性值
二极管配置3 个独立式
二极管类型肖特基
电压 - DC 反向(Vr)(最大值)20V
电流 - 平均整流(Io)(每二极管)50mA
不同 If 时的电压 - 正向(Vf550mV @ 50mA
速度小信号 =< 200mA(Io),任意速度
不同 Vr 时的电流 - 反向漏电流500nA @ 20V
工作温度 - 结125°C(最大)
安装类型表面贴装
封装/外壳6-TSSOP,SC-88,SOT-363
供应商器件封装US6

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HN2S03FU
TOSHIBA Diode
Silicon Epitaxial Schottky Barrier Type
HN2S03FU
High Speed Switching Application
HN2S03FU is composed of 3 independent diodes.
Low forward voltage
Low reverse current
Small total capacitance
: V
F (3)
= 0.50V (typ.)
: I
R
= 0.5μA (max)
: C
T
= 3.9pF (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature range
Operating temperature range
Symbol
V
RM
V
R
I
FM
I
O
I
FSM
P
T
j
T
stg
T
opr
Rating
25
20
100
*
50
*
1
*
200
**
125
−55
to 125
−40
to 110
Unit
V
V
mA
mA
A
mW
°C
°C
°C
JEDEC
JEITA
TOSHIBA
1-2T1C
Weight: 6.2 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* : This is absolute maximum rating of single diode (Q1 or Q2 or Q3).
In the case of using 2 or 3 diodes, the absolute maximum ratings
per diodes is 75
%
of the single diode one.
** :Total rating
Electrical Characteristics
(Q1, Q2, Q3 Common, Ta = 25°C)
Characteristic
Symbol
V
F (1)
Forward voltage
V
F (2)
V
F (3)
Reverse current
Total capacitance
I
R
C
T
Test
Circuit
Test Condition
I
F
= 1mA
I
F
= 5mA
I
F
= 50mA
V
R
= 20V
V
R
= 0, f = 1MH
z
Min
Typ.
0.33
0.38
0.50
3.9
Max
0.55
0.5
V
Unit
μA
pF
Start of commercial production
2001-11
1
2014-03-01

 
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