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PZT2222A-TP

产品描述NPN,TRANSISTORS,SOT-223 PKG
产品类别半导体    分立半导体   
文件大小561KB,共4页
制造商Micro_Commercial_Co
标准
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PZT2222A-TP概述

NPN,TRANSISTORS,SOT-223 PKG

PZT2222A-TP规格参数

参数名称属性值
晶体管类型NPN
电压 - 集射极击穿(最大值)6V
不同 Ib,Ic 时的 Vce 饱和值(最大值)1V @ 50mA,500mA
电流 - 集电极截止(最大值)10nA(ICBO)
不同 Ic,Vce 时的 DC 电流增益(hFE)(最小值)100 @ 150mA,10V
功率 - 最大值1W
频率 - 跃迁300MHz
工作温度-55°C ~ 150°C(TJ)
安装类型表面贴装
封装/外壳TO-261-4,TO-261AA
供应商器件封装SOT-223

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MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
PZT2222A
NPN
Plastic-Encapsulate
Transistors
SOT-223
Features
Surface Mount SOT-223 Package
Capable of 1Watts of Power Dissipation
Ic:0.6A
Marking:ZT2222A
Operating and Storage Junction Temperatures:-55
o
C to 150
o
C
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Halogen
free available upon request by adding suffix "-HF"
Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS Compliant. See ordering information)
Parameter
Collector-Emitter Breakdown Voltage*
(I
C
=10mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=10µAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=10µAdc, I
C
=0)
Emitter Cutoff Current
(V
EB
=3Vdc, I
C
=0Vdc)
Collector Cutoff Current
(V
CB
=60Vdc, I
E
=0)
DC Current Gain*
(I
C
=0.1mAdc, V
CE
=10Vdc)
(I
C
=1.0mAdc, V
CE
=10Vdc)
(I
C
=10mAdc, V
CE
=-10Vdc)
(I
C
=150mAdc, V
CE
=10Vdc)
(I
C
=150mAdc, V
CE
=10Vdc)
(I
C
=500mAdc, V
CE
=10Vdc)
Collector-Emitter Saturation Voltage
(I
C
=150mAdc, I
B
=15mAdc)
(I
C
=500mAdc, I
B
=50mAdc)
Base-Emitter Saturation Voltage
(I
C
=150mAdc, I
B
=15mAdc)
(I
C
=500mAdc, I
B
=50mAdc)
Current Gain-Bandwidth Product
(I
C
=20mAdc, V
CE
=20Vdc, f= 100MHz)
Output Capacitance
(V
CB
=10Vdc, I
E
=0, f=1MHz)
Min
Max
Units
Vdc
Vdc
Vdc
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
EBO
I
CBO
40
75
6.0
10
10
nAdc
nAdc
ON CHARACTERISTICS
h
FE
35
50
75
100
50
40
1.BASE
2.COLLECTOR
3.EMITTER
300
MM
DIM
A
MIN
.248
.130
.264
.001
.114
.091
---
.009
.030
V
CE(sat)
DIMENSIONS
INCHES
MAX
MIN
MAX
.264
6.30
6.70
.146
.287
.004
.122
.071
.014
---
3.30
6.70
0.02
2.90
2.30
---
0.23
0.75
1.80
0.35
---
3.70
7.30
0.10
3.10
NOTE
0.3
1.0
1.2
2.0
Vdc
V
BE(sat)
Vdc
SMALL-SIGNAL CHARACTERISTICS
f
T
B
C
D
E
F
G
H
J
300
8.0
MHz
C
bo
pF
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
Delay Time
Rise Time
Storage Time
Fall Time
V
CC
=30VI
C
=150mA,
V
BE(OFF)
=0.5V,I
B1
=15mA
V
CC
=30VI
C
=150mA,
I
B1
=-I
B2
=15mA
10
25
225
60
ns
ns
ns
ns
www.mccsemi.com
Revision:
A
1 of
4
2015/11/18

 
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