NSPM0101
ESD Protection Diode
Features
•
Protection for the following IEC Standards:
IEC61000−4−2 Level 4:
±30
kV Contact Discharge
IEC61000−4−5 (Lightning) 60 A (8/20
ms)
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
IEC 61000−4−2 (ESD)
Operating Junction and Storage
Temperature Range
Maximum Peak Pulse Current
8/20
ms
@ T
A
= 25°C
Contact
Air
T
J
, T
stg
I
PP
Symbol
Value
±30
±30
−65 to +150
60
Unit
kV
°C
A
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1
Cathode
2
Anode
MARKING
DIAGRAM
UDFN2
CASE 517CZ
E
M
EM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
= Specific Device Code
= Date Code
ORDERING INFORMATION
Device
NSPM0101MUT5G
Package
UDFN2
(Pb−Free)
Shipping
†
8000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2017
1
February, 2018 − Rev. 3
Publication Order Number:
NSPM0101/D
NSPM0101
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
I
PP
V
C
V
BR
V
RWM
I
R
V
F
I
T
V
I
F
I
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
Uni−Directional
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (Note 1)
Clamping Voltage (Note 1)
Dynamic Resistance
Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
V
C
R
DYN
C
J
I
T
= 1 mA
V
RWM
= 10 V
I
PP
= 10 A
I
PP
= 60 A
100 ns TLP Pulse, I/O Pin to GND
V
R
= 0 V, f = 1 MHz
0.05
400
12
0.5
15
20
Conditions
Min
Typ
Max
10
Unit
V
V
mA
V
V
W
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Non−repetitive current pulse at T
A
= 25°C, per IEC61000−4−5 waveform.
16
14
12
Vpk (V)
Vpk (V)
10
8
6
4
2
0
0
5
10
15
Ipk (A)
20
25
30
0
−2
−4
−6
−8
−10
−12
−14
−16
−30
−25
−20
−15
Ipk (A)
−10
−5
0
Figure 1. Positive TLP I−V Curve
Figure 2. Negative TLP I−V Curve
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2
NSPM0101
IEC 61000−4−2 Spec.
Test Volt-
age (kV)
2
4
6
8
First Peak
Current
(A)
7.5
15
22.5
30
Current at
30 ns (A)
4
8
12
16
Current at
60 ns (A)
2
4
6
8
I @ 60 ns
10%
t
P
= 0.7 ns to 1 ns
I @ 30 ns
IEC61000−4−2 Waveform
I
peak
100%
90%
Level
1
2
3
4
Figure 3. IEC61000−4−2 Spec
Device
ESD Gun
Under
Test
Oscilloscope
50
W
Cable
50
W
Figure 4. Diagram of ESD Test Setup
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
100
% OF PEAK PULSE CURRENT
90
80
70
60
50
40
30
20
10
0
0
20
t
P
t
r
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
PEAK VALUE I
RSM
@ 8
ms
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8
ms
HALF VALUE I
RSM
/2 @ 20
ms
40
t, TIME (ms)
60
80
Figure 5. 8 x 20
ms
Pulse Waveform
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3
NSPM0101
PACKAGE DIMENSIONS
UDFN2 1.6x1.0, 1.1P
CASE 517CZ
ISSUE B
D
A
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
DIM
A
A1
b
D
E
e
L
MILLIMETERS
MIN
MAX
0.45
0.55
−−−
0.05
0.83
0.93
1.60 BSC
1.00 BSC
1.10 BSC
0.35
0.45
2X
0.08 C
2X
0.08 C
TOP VIEW
0.05 C
0.05 C
A1
SIDE VIEW
e
e/2
1
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◊
ÉÉÉ
ÉÉÉ
PIN ONE
REFERENCE
E
A
RECOMMENDED
SOLDERING FOOTPRINT*
C
SEATING
PLANE
1.70
2X
1.00
1
0.07
b
2X
M
C A B
2X
0.58
L
0.07
M
DIMENSIONS: MILLIMETERS
BOTTOM VIEW
C A B
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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4
NSPM0101/D
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