Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
PMP4501V; PMP4501G;
PMP4501Y
NPN/NPN matched double transistors
Rev. 04 — 28 August 2009
Product data sheet
1. Product profile
1.1 General description
NPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plastic
packages. The transistors in the SOT666 and SOT363 (SC-88) packages are fully isolated
internally.
Table 1.
Product overview
Package
NXP
PMP4501V
PMP4501G
PMP4501Y
SOT666
SOT353
SOT363
JEITA
-
SC-88A
SC-88
NPN/NPN h
FE1
/h
FE2
0.98 complement
PMP4201V
PMP4201G
PMP4201Y
PNP/PNP
complement
PMP5501V
PMP5501G
PMP5501Y
Type number
1.2 Features
I
I
I
I
Current gain matching
Base-emitter voltage matching
Common emitter configuration for SOT353 types
Application-optimized pinout
1.3 Applications
I
Current mirror
I
Differential amplifier
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
V
CE
= 5 V;
I
C
= 2 mA
Conditions
open base
Min
-
-
200
Typ
-
-
290
Max
45
100
450
Unit
V
mA
Per transistor
NXP Semiconductors
PMP4501V; PMP4501G; PMP4501Y
NPN/NPN matched double transistors
Quick reference data
…continued
Parameter
h
FE
matching
V
BE
matching
Conditions
V
CE
= 5 V;
I
C
= 2 mA
V
CE
= 5 V;
I
C
= 2 mA
[1]
Table 2.
Symbol
Per device
h
FE1
/h
FE2
V
BE1
−V
BE2
Min
0.95
-
Typ
1
-
Max
-
2
Unit
[2]
mV
[1]
[2]
The smaller of the two values is taken as the numerator.
The smaller of the two values is subtracted from the larger value.
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
SOT353
1
2
3
4
5
base TR1
emitter TR1, TR2
base TR2
collector TR2
collector TR1
1
2
3
1
2
3
006aaa549
Pinning
Description
base TR1
base TR2
collector TR2
emitter TR2
emitter TR1
collector TR1
1
1
2
3
001aab555
Simplified outline
Symbol
SOT666; SOT363
6
5
4
6
TR1
TR2
5
4
2
3
006aaa548
5
4
5
4
TR1 TR2
3. Ordering information
Table 4.
Ordering information
Package
Name
PMP4501V
PMP4501G
PMP4501Y
-
SC-88A
SC-88
Description
plastic surface-mounted package; 6 leads
plastic surface-mounted package; 5 leads
plastic surface-mounted package; 6 leads
Version
SOT666
SOT353
SOT363
Type number
PMP4501V_G_Y_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 28 August 2009
2 of 14
NXP Semiconductors
PMP4501V; PMP4501G; PMP4501Y
NPN/NPN matched double transistors
4. Marking
Table 5.
PMP4501V
PMP4501G
PMP4501Y
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
EB
R6*
S8*
Type number
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
total power dissipation
SOT666
SOT353
SOT363
Per device
P
tot
total power dissipation
SOT666
SOT353
SOT363
T
j
T
amb
T
stg
[1]
[2]
Conditions
open emitter
open base
open collector
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
[1][2]
[1]
[1]
Min
-
-
-
-
-
Max
50
45
6
100
200
Unit
V
V
V
mA
mA
Per transistor
-
-
-
200
200
200
mW
mW
mW
T
amb
≤
25
°C
[1][2]
[1]
[1]
-
-
-
-
−65
−65
300
300
300
150
+150
+150
mW
mW
mW
°C
°C
°C
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
PMP4501V_G_Y_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 28 August 2009
3 of 14
NXP Semiconductors
PMP4501V; PMP4501G; PMP4501Y
NPN/NPN matched double transistors
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
SOT666
SOT353
SOT363
Per device
R
th(j-a)
thermal resistance from
junction to ambient
SOT666
SOT353
SOT363
[1]
[2]
Conditions
in free air
[1][2]
[1]
[1]
Min
Typ
Max
Unit
Per transistor
-
-
-
-
-
-
625
625
625
K/W
K/W
K/W
in free air
[1][2]
[1]
[1]
-
-
-
-
-
-
416
416
416
K/W
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified
Symbol
I
CBO
Parameter
collector-base cut-off
current
Conditions
V
CB
= 30 V;
I
E
= 0 A
V
CB
= 30 V;
I
E
= 0 A;
T
j
= 150
°C
I
EBO
h
FE
emitter-base cut-off
current
DC current gain
V
EB
= 5 V;
I
C
= 0 A
V
CE
= 5 V;
I
C
= 10
µA
V
CE
= 5 V;
I
C
= 2 mA
V
CEsat
collector-emitter
saturation voltage
I
C
= 10 mA;
I
B
= 0.5 mA
I
C
= 100 mA;
I
B
= 5 mA
V
BEsat
base-emitter saturation I
C
= 10 mA;
voltage
I
B
= 0.5 mA
I
C
= 100 mA;
I
B
= 5 mA
[1]
Min
-
-
Typ
-
-
Max
15
5
Unit
nA
µA
Per transistor
-
-
200
-
-
-
-
-
250
290
50
200
760
910
100
-
450
200
400
-
-
nA
mV
mV
mV
mV
[1]
PMP4501V_G_Y_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 28 August 2009
4 of 14
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
