PTVS12VZ1USK
22 August 2016
Transient voltage suppressor in DSN1608-2 for mobile
applications
Product data sheet
1. General description
Unidirectional Transient Voltage Suppressor (TVS) in a very small leadless DSN1608-2 (SOD964)
package.
2. Features and benefits
•
•
•
•
•
Rated peak pulse current: I
PPM
= 65 A (8/20 µs pulse)
Rated peak pulse power: P
PPM
= 1900 W (8/20 µs pulse)
Dynamic resistance R
dyn
= 0.11 Ω
Reverse current: I
RM
= 0.1 nA
Very low package height: 0.29 mm
3. Applications
•
•
•
Power supply protection
Industrial application
Power management
4. Quick reference data
Table 1. Quick reference data
Symbol
V
RWM
I
PPM
Parameter
reverse standoff
voltage
peak pulse current
Conditions
T
amb
= 25 °C
t
p
= 8/20 µs
t
p
= 10/1000 μs
[1]
[2]
[3]
In accordance with IEC 61000-4-5 (8/20 µs current waveform).
Measured from pin 1 to pin 2.
In accordance with IEC 61643-321 (10/1000 µs current waveform).
Min
-
[1][2]
[3][2]
-
-
Typ
-
-
-
Max
12
65
10.5
Unit
V
A
A
Nexperia
PTVS12VZ1USK
Transient voltage suppressor in DSN1608-2 for mobile applications
5. Pinning information
Table 2. Pinning information
Pin
1
2
Symbol Description
K
A
cathode
anode
1
2
sym035
Simplified outline
Graphic symbol
1
2
Transparent top view
DSN1608-2 (SOD964)
6. Ordering information
Table 3. Ordering information
Type number
PTVS12VZ1USK
Package
Name
DSN1608-2
Description
leadless very small package; 2 terminals; body 1.6 x 0.8 x 0.29
mm
Version
SOD964
7. Marking
Table 4. Marking codes
Type number
PTVS12VZ1USK
Marking code
Z5
PTVS12VZ1USK
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
22 August 2016
2 / 14
Nexperia
PTVS12VZ1USK
Transient voltage suppressor in DSN1608-2 for mobile applications
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
PPM
I
PPM
T
j
T
amb
T
stg
V
ESD
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
electrostatic discharge
voltage
IEC 61000-4-2; contact discharge
IEC 61000-4-2; air discharge
[4][2]
[4][2]
Conditions
t
p
= 8/20 µs
t
p
= 10/1000 μs
t
p
= 8/20 µs
t
p
= 10/1000 μs
[1][2]
[3][2]
[1][2]
[3][2]
Min
-
-
-
-
-
-40
-65
-
-
Max
1900
230
65
10.5
150
125
150
30
30
Unit
W
W
A
A
°C
°C
°C
kV
kV
ESD maximum ratings
[1]
[2]
[3]
[4]
In accordance with IEC 61000-4-5 (8/20 µs current waveform).
Measured from pin 1 to pin 2.
In accordance with IEC 61643-321 (10/1000 µs current waveform).
Device stressed with ten non-repetitive ESD pulses.
120
I
PP
(%)
80
100 % I
PP
; 8 µs
001aaa630
001aaa631
I
PP
100 %
90 %
e
-t
50 % I
PP
; 20 µs
40
10 %
0
0
10
20
30
40
t
p
(µs)
t
r
= 0.6 ns to 1 ns
30 ns
60 ns
t
Fig. 1.
8/20 µs pulse waveform according to
IEC 61000-4-5
Fig. 2.
ESD pulse waveform according to
IEC 61000-4-2
PTVS12VZ1USK
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
22 August 2016
3 / 14
Nexperia
PTVS12VZ1USK
Transient voltage suppressor in DSN1608-2 for mobile applications
150
I
PP
(%)
100
100 % I
PP
; 10 µs
006aab319
50
50 % I
PP
; 1000 µs
0
0
1.0
2.0
3.0
t
p
(ms)
4.0
Fig. 3.
10/1000 µs pulse waveform according to IEC 61643-321
9. Characteristics
Table 6. Characteristics
Symbol
V
RWM
V
BR
I
RM
C
d
V
CL
Parameter
reverse standoff
voltage
breakdown voltage
reverse leakage
current
diode capacitance
clamping voltage
Conditions
T
amb
= 25 °C
I
R
= 10 mA; T
amb
= 25 °C
V
RWM
= 12 V; T
amb
= 25 °C
f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C
I
PPM
= 65 A; T
amb
= 25 °C; t
p
= 8/20 µs
I
PPM
= 10.5 A; T
amb
= 25 °C;
t
p
= 10/1000 μs
R
dyn
[1]
[2]
[3]
[4]
Min
-
[1]
[1]
13.3
-
-
[2][1]
[3][1]
[4][1]
-
-
-
Typ
-
14.4
0.1
430
24.9
18
0.11
Max
12
15.4
200
-
29
21.8
-
Unit
V
V
nA
pF
V
V
Ω
dynamic resistance
I
R
= 10 A; T
amb
= 25 °C
Measured from pin 1 to 2.
In accordance with IEC 61000-4-5 (8/20 µs current waveform).
In accordance with IEC 61643-321 (10/1000 µs current waveform).
Non-repetitive current pulse, Transmission Line Pulse (TLP) t
p
= 100 ns; square pulse; ANSI / ESD STM5.5.1-2008.
PTVS12VZ1USK
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
22 August 2016
4 / 14
Nexperia
PTVS12VZ1USK
Transient voltage suppressor in DSN1608-2 for mobile applications
I
10
4
P
PPM
(W)
10
3
aaa-024402
- V
CL
- V
BR
- V
RWM
- I
RM
- I
R
-
P-N
+
V
10
2
10
- I
PP
- I
PPM
006aab324
10
10
2
10
3
t
p
(µs)
10
4
Fig. 4.
V-I characteristics for a unidirectional TVS
protection diode
1.2
006aab321
Fig. 5.
Rated peak pulse power as a funtion of square
pulse duration; typical values
aaa-024403
10
2
I
RM
(nA)
10
P
PPM
P
PPM(25°C)
0.8
1
0.4
10
-1
0
0
50
100
150
T
j
(°C)
200
10
-2
-100
0
100
T
amb
(°C)
200
Fig. 6.
Relative variation of rated peak pulse power
as a function of junction temperature; typical
values
V
RWM
= 12 V
Fig. 7.
Relative variation of reverse leakage current
as a function of ambient temperature; typical
values
PTVS12VZ1USK
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
22 August 2016
5 / 14
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